IPT015N10N5ATMA1 N-Channel MOSFET, 100V 150A, OptiMOS TO-220 Package

  • Designed for efficient switching, this component enables precise control of current in electronic circuits.
  • Features N-channel MOSFET technology, offering fast switching speeds important for high-frequency applications.
  • The compact TO-252 package helps save board space and allows for higher component density on PCBs.
  • Well-suited for power management tasks in consumer electronics, supporting stable and efficient device operation.
  • Manufactured to meet industry standards, ensuring dependable performance and consistent operation over time.
Infineon logo
产品上方询盘

IPT015N10N5ATMA1 Overview

The IPT015N10N5ATMA1 is a high-performance N-channel MOSFET designed for demanding industrial and automotive applications requiring low on-resistance and robust current handling. This advanced power transistor features a maximum drain-source voltage of 100 V and an extremely low RDS(on), making it ideal for high-efficiency switching and power management tasks. Its compact, surface-mount package enables space-saving PCB layouts, while its fast switching characteristics support high-frequency operation. For engineers and sourcing specialists seeking a reliable, efficient, and cost-effective power MOSFET, the IPT015N10N5ATMA1 stands out as a preferred choice. Discover more from the IC Manufacturer.

IPT015N10N5ATMA1 Technical Specifications

AttributeValue
Transistor TypeN-Channel MOSFET
Drain-Source Voltage (VDS)100 V
Continuous Drain Current (ID)120 A
On-Resistance (RDS(on))1.5 m??
Gate Charge (Qg)120 nC
PackageSuperSO8 (PG-TDSON-8)
Mounting TypeSurface Mount
Operating Temperature Range-55??C to 175??C

IPT015N10N5ATMA1 Key Features

  • Ultra-low on-resistance of just 1.5 m??, reducing conduction losses and ensuring higher efficiency in power conversion circuits.
  • High current capability with a continuous drain current up to 120 A, supporting demanding load requirements in industrial and automotive systems.
  • 100 V drain-source voltage rating allows usage in applications with higher voltage transients, improving system robustness.
  • Fast switching performance due to optimized gate charge, enabling high-frequency operation and minimizing switching losses.
  • Robust thermal performance and extended operating temperature range up to 175??C, suitable for harsh environments.
  • Space-saving SuperSO8 (PG-TDSON-8) package for compact PCB layouts and automated assembly.

IPT015N10N5ATMA1 Advantages vs Typical Alternatives

This device sets itself apart from typical alternatives through its combination of ultra-low RDS(on) and high current handling, delivering lower power losses and improved efficiency. The robust voltage rating and fast switching capability make it particularly suitable for applications requiring both reliability and high-speed operation. Its advanced package supports thermal management and compact designs, providing efficiency and integration benefits for demanding applications.

Typical Applications

  • High-efficiency DC-DC converters in industrial and automotive electronics, where low conduction losses are crucial for energy savings and thermal management.
  • Motor drive circuits, taking advantage of the device??s high current rating and fast switching capability for responsive and reliable motor control.
  • Power supplies and battery management systems, where robust voltage handling and low on-resistance contribute to system longevity and reliability.
  • Switching applications in inverter circuits, supporting high-frequency operation with minimal switching losses and strong thermal performance.

IPT015N10N5ATMA1 Brand Info

The IPT015N10N5ATMA1 is part of a reputable power MOSFET product line engineered for high efficiency and performance in challenging environments. This device reflects the manufacturer??s commitment to advanced semiconductor technology, offering engineers a solution that combines reliability, compactness, and superior electrical characteristics. Its design aligns with stringent industry requirements, making it a trusted choice for industrial and automotive power management applications.

FAQ

What are the key benefits of using this device in high-current applications?

The combination of low on-resistance and high continuous drain current allows this MOSFET to handle substantial loads with minimal power loss, leading to greater efficiency and reduced thermal stress in high-current designs.

How does the package type benefit PCB design and assembly?

The SuperSO8 (PG-TDSON-8) surface-mount package enables compact layouts and supports automated assembly processes, making it ideal for modern, space-constrained PCBs and high-volume manufacturing.

Is the device suitable for harsh or high-temperature environments?

Yes, with an operating temperature range of -55??C to 175??C, this component is engineered for reliability in demanding or high-temperature industrial and automotive settings, ensuring consistent performance over time.

📩 Contact Us

产品中间询盘

What makes this MOSFET a good choice for switching applications?

The fast switching performance, enabled by optimized gate charge, reduces switching losses, making it well-suited for high-frequency switching applications such as converters, inverters, and motor drives.

Can it be used in automotive power management designs?

Its high voltage rating, robust current handling, and automotive-compatible package make it an excellent candidate for automotive power management, battery systems, and motor control circuits requiring durability and efficiency.

Application

, ,

Save cost and time

Fast global delivery

Original parts guaranteed

Expert after-sale support

Looking for a Better Price?