IPT010N08NM5ATMA1 Overview
The IPT010N08NM5ATMA1 is an advanced N-channel MOSFET engineered for demanding industrial and power management applications. Designed with a low RDS(on) and robust voltage handling, this device enables highly efficient switching, reduced power losses, and improved thermal performance. Its compact footprint and rugged construction make it well-suited for high-density circuit designs, contributing to enhanced reliability and system longevity. For detailed sourcing and manufacturer information, visit IC Manufacturer.
IPT010N08NM5ATMA1 Technical Specifications
| Parameter | Value |
|---|---|
| Device Type | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | 80 V |
| Drain Current (ID) | 100 A |
| RDS(on) (max) | 1.0 m?? |
| Gate Charge (Qg) | Not specified in sheet |
| Package Type | TO-Leadless (TOLL) |
| Mounting Style | Surface Mount |
| Operating Temperature Range | -55??C to +175??C |
| Polarity | N-Channel |
IPT010N08NM5ATMA1 Key Features
- Ultra-low RDS(on) of 1.0 m?? supports minimized conduction losses, ensuring higher efficiency in high-current switching applications.
- High drain current capability (up to 100 A) enables use in power-dense designs, benefitting electric drives and power supplies.
- Wide operating temperature range from -55??C to +175??C provides robust reliability in challenging industrial and automotive environments.
- TO-Leadless (TOLL) surface mount package maximizes board space utilization and improves thermal management.
IPT010N08NM5ATMA1 Advantages vs Typical Alternatives
With its extremely low RDS(on) and high current handling, this N-channel MOSFET stands out compared to conventional alternatives by delivering superior efficiency and reduced heat generation. Its advanced packaging supports denser layouts and better thermal dissipation, enhancing overall system reliability and longevity in industrial and automotive power circuits.
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Typical Applications
- Switching power supplies for industrial automation, where high efficiency and minimal loss are required for reliable operation in compact enclosures.
- Motor control circuits in automotive or factory settings, leveraging the high current and voltage capabilities for precise and robust motor drive solutions.
- DC-DC converters in telecom and server infrastructure, where board space and thermal management are critical for continuous operation.
- Battery management systems in energy storage and electric vehicles, utilizing the MOSFET’s low RDS(on) to improve system efficiency and lifespan.
IPT010N08NM5ATMA1 Brand Info
This product is part of a high-performance MOSFET portfolio recognized for low resistance and high reliability. The IPT010N08NM5ATMA1 is designed to address the needs of engineers seeking robust MOSFET solutions for demanding industrial and automotive environments. Its advanced silicon process and innovative TOLL package underscore the brand’s commitment to efficiency, longevity, and seamless integration in modern electronic systems.
FAQ
What makes the IPT010N08NM5ATMA1 suitable for high-current applications?
Its low RDS(on) and high drain current rating allow it to handle substantial currents with minimal power loss, making it ideal for power supplies, motor drives, and other applications requiring efficient, reliable switching of high loads.
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How does the TOLL package benefit thermal performance?
The TO-Leadless (TOLL) package offers enhanced thermal conductivity and lower inductance, which helps dissipate heat more effectively and allows for higher current handling in a compact footprint, improving overall system reliability.
Can this MOSFET be used in automotive environments?
Yes, with its wide operating temperature range and robust design, the device is well-suited for automotive motor control, battery management, and power conversion systems where reliable operation under harsh conditions is essential.
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What are the integration advantages of using this MOSFET?
Its compact surface-mount package and high efficiency enable engineers to design smaller, more densely populated PCBs, optimizing space and simplifying thermal management without sacrificing performance.
Is this device appropriate for switching power supply designs?
Absolutely. The combination of low RDS(on), high current capability, and efficient heat dissipation makes it an excellent choice for switching power supplies that require robust, energy-efficient MOSFETs.
