IPT007N06NATMA1 Overview
The IPT007N06NATMA1 is a high-performance N-channel MOSFET designed for demanding industrial, automotive, and power management applications. With a focus on low RDS(on) and efficient switching, it delivers superior energy efficiency and thermal performance. Its advanced trench technology ensures reliable operation in harsh environments, making it suitable for high-current, low-voltage circuits. The compact package facilitates dense board layouts while maintaining excellent electrical characteristics. For detailed specifications and sourcing, visit IC Manufacturer.
IPT007N06NATMA1 Technical Specifications
| Parameter | Value |
|---|---|
| Transistor Type | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | 60 V |
| Continuous Drain Current (ID) | 100 A |
| RDS(on) (Max @ VGS=10V) | 0.7 m?? |
| Gate Threshold Voltage (VGS(th)) | 2 V (typ.) |
| Maximum Gate-Source Voltage (VGS) | ?I20 V |
| Power Dissipation (PD) | 300 W |
| Package Type | TO-220 |
| Operating Temperature Range | -55??C to +175??C |
IPT007N06NATMA1 Key Features
- Ultra-low RDS(on) of 0.7 m?? minimizes conduction losses, enabling high system efficiency in power conversion and switching.
- High continuous drain current capability (100 A) supports demanding load conditions, vital for robust power stage implementations.
- Advanced trench MOSFET technology enhances switching speed and thermal performance, reducing heat generation and improving reliability in compact designs.
- Wide operating temperature range from -55??C to +175??C ensures stable operation in harsh automotive and industrial environments.
- TO-220 package delivers excellent heat dissipation and mechanical stability, simplifying integration into high-power circuits.
- ?I20 V maximum gate-source voltage tolerance increases design flexibility and robustness against voltage transients.
- Gate threshold voltage of 2 V (typical) supports logic-level drive for ease of interfacing with a wide range of controllers.
IPT007N06NATMA1 Advantages vs Typical Alternatives
With its exceptionally low RDS(on) and high drain current rating, this MOSFET outperforms standard alternatives in efficiency, thermal management, and current handling. The optimized trench structure and TO-220 packaging deliver improved reliability and integration for modern power electronics, while the wide temperature range ensures consistent performance in critical applications.
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Typical Applications
- High-efficiency DC-DC converters: The ultra-low conduction loss and high current capacity make this device ideal for use in synchronous buck converters and other high-frequency switching regulators in industrial and automotive power supplies.
- Motor control and drive circuits: Capable of handling large inductive loads, this MOSFET is well suited for electric motor drivers in automation and transport systems.
- Battery management systems: Its high reliability and low on-resistance help achieve precise power switching and protection in battery-powered devices and energy storage solutions.
- Load switching and protection: Suitable for switching high-current loads in automation, lighting, and power distribution modules where low losses and robust performance are required.
IPT007N06NATMA1 Brand Info
The IPT007N06NATMA1 is developed by a leading semiconductor manufacturer known for high-quality MOSFET solutions. This product integrates cutting-edge trench MOSFET technology to deliver low on-resistance and superior thermal characteristics, supporting designers in creating energy-efficient, compact, and long-term reliable power electronic systems. Its robust design and versatile package make it a preferred choice for engineers specifying components in demanding automotive, industrial, and power management applications.
FAQ
What is the maximum drain-source voltage supported by IPT007N06NATMA1?
This device can handle a maximum drain-source voltage of 60 V, which enables its use in a variety of medium-voltage power switching and conversion circuits commonly found in industrial and automotive systems.
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How does the low RDS(on) benefit power electronics applications?
The very low on-resistance of 0.7 m?? significantly reduces conduction losses, thereby improving overall system efficiency. This is particularly important in applications where energy savings and thermal management are critical.
Can this MOSFET operate in high-temperature environments?
Yes, with an operating temperature range from -55??C to +175??C, it is designed to maintain stable performance even under extreme thermal conditions, making it suitable for harsh automotive and industrial environments.
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What type of package does IPT007N06NATMA1 use, and why is it important?
The device is housed in a TO-220 package, which offers excellent heat dissipation and mechanical durability. This package type makes it easier to implement in high-power designs requiring effective thermal management.
Is IPT007N06NATMA1 suitable for logic-level driving?
With a typical gate threshold voltage of 2 V, this MOSFET can be driven by standard logic-level signals, facilitating easy integration with microcontrollers and digital control ICs in a wide range of power management applications.
