IPP60R016CM8XKSA1 Power MOSFET, 600V 63A, TO-247 Package, Infineon Transistor

  • Designed for efficient power switching, enabling reduced energy loss in high-voltage applications.
  • Low RDS(on) value helps minimize heat generation, supporting cooler operation under load.
  • TO-247 package allows for straightforward mounting and optimized thermal management in space-limited designs.
  • Commonly used in industrial power supplies where high efficiency and robust performance are required.
  • Manufactured to meet rigorous standards, ensuring consistent operation and long-term durability.
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IPP60R016CM8XKSA1 Overview

The IPP60R016CM8XKSA1 is a high-performance N-channel power MOSFET designed for demanding industrial, commercial, and power conversion applications. Its advanced technology delivers low RDS(on), high voltage tolerance, and efficient switching, making it ideal for use in systems where reliability, efficiency, and thermal management are critical. This component is frequently chosen for industrial power supplies, motor drives, and energy management solutions, offering engineers robust performance across a wide range of operating conditions. For further sourcing details, visit IC Manufacturer.

IPP60R016CM8XKSA1 Technical Specifications

ParameterValue
Transistor TypeN-Channel MOSFET
Drain-Source Voltage (VDS)600 V
RDS(on) (Max)0.016 ??
Continuous Drain Current (ID)41.8 A
Gate Charge (Qg)154 nC
Power Dissipation (PD)333 W
Package / CaseTO-247-3
Operating Temperature Range-55??C to +150??C

IPP60R016CM8XKSA1 Key Features

  • Ultra-low on-state resistance (RDS(on)) delivers superior energy efficiency, reducing conduction losses in high-current applications.
  • High voltage rating of 600 V allows safe operation in demanding power conversion and switching environments.
  • Robust thermal performance with high power dissipation capacity enables reliable operation even under heavy load conditions.
  • Optimized gate charge ensures fast switching speeds, contributing to increased system efficiency and minimizing switching losses.

IPP60R016CM8XKSA1 Advantages vs Typical Alternatives

This MOSFET offers significant advantages compared to standard alternatives thanks to its exceptionally low RDS(on) and high current capability. Its design supports greater efficiency and thermal stability, making it an excellent choice for applications that demand both power and reliability. The optimized gate charge also allows for faster transitions, reducing overall system energy consumption and heat generation, which are critical for industrial power solutions.

Typical Applications

  • High-efficiency power supplies: The device??s low RDS(on) and high voltage rating make it ideal for use in switched-mode power supplies and uninterruptible power systems, supporting improved conversion efficiency and thermal performance.
  • Industrial motor drives: Suitable for robust motor control solutions where rapid switching and high current handling are required for precise, reliable operation.
  • Renewable energy inverters: Frequently implemented in solar and wind energy systems, where reliable, efficient power switching is crucial for maximum energy yield and long-term durability.
  • Battery management systems: Employed in large-scale battery storage or electric vehicle charging stations, benefiting from its high current handling and fast switching properties.

IPP60R016CM8XKSA1 Brand Info

This product is part of a series of advanced power MOSFETs engineered for industrial and high-power applications. The IPP60R016CM8XKSA1 leverages cutting-edge semiconductor technology to achieve low on-resistance and high voltage endurance, providing engineers with a reliable solution for critical power conversion and switching tasks. Its robust TO-247-3 package ensures mechanical durability and effective heat dissipation, aligning with the requirements of professional power electronics design.

FAQ

What makes the IPP60R016CM8XKSA1 suitable for high-power applications?

Its combination of low RDS(on) (0.016 ??), high drain current capability (41.8 A), and a 600 V voltage rating enable this MOSFET to handle substantial power levels efficiently, making it ideal for demanding industrial and commercial systems.

How does the package type benefit thermal management?

The TO-247-3 package is designed for enhanced heat dissipation, supporting the device??s high power dissipation rating (up to 333 W). This helps ensure stable operation and longer component life even in applications with significant thermal stress.

Can the device be used in high-frequency switching circuits?

Yes, the optimized gate charge (154 nC) allows for fast switching performance, which is beneficial in circuits where high-frequency operation and minimal switching losses are required.

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What are some typical industries or systems where the device is used?

The device is commonly found in industrial automation, renewable energy conversion (like solar inverters), power supply design, and motor control systems, where efficiency, reliability, and high-voltage operation are essential.

What is the recommended operating temperature range for safe use?

The recommended operating temperature range for this MOSFET is from -55??C to +150??C, allowing it to function reliably across a broad spectrum of environmental conditions typical in industrial settings.

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