IPP200N25N3GXKSA1 Overview
The IPP200N25N3GXKSA1 is a high-performance N-channel MOSFET designed for demanding industrial and power management applications. With its advanced trench technology and optimized silicon structure, this device delivers low on-resistance and high current capability, making it ideal for efficient switching operations. The robust design ensures reliable operation in harsh environments, supporting enhanced thermal management and system longevity. Its combination of efficiency, ruggedness, and high-speed switching performance positions it as a preferred solution for modern power electronics. For more details, visit IC Manufacturer.
IPP200N25N3GXKSA1 Technical Specifications
| Parameter | Value |
|---|---|
| Transistor Type | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | 250 V |
| Continuous Drain Current (ID) | 200 A |
| RDS(on) (Max) | 2.1 m?? |
| Gate Charge (Qg) | Not specified |
| Package Type | TO-220 |
| Technology | Trench MOSFET |
| Mounting Style | Through Hole |
| Lead Free Status | RoHS Compliant |
IPP200N25N3GXKSA1 Key Features
- Ultra-low on-resistance ensures minimal conduction losses, improving overall system efficiency in high-current applications.
- High drain-source voltage rating of 250 V allows use in circuits requiring robust voltage handling, supporting greater design flexibility.
- TO-220 package and through-hole mounting provide excellent heat dissipation and mechanical stability for reliable long-term operation.
- RoHS compliance supports environmental and regulatory requirements for industrial and commercial electronics.
IPP200N25N3GXKSA1 Advantages vs Typical Alternatives
Compared to many conventional power MOSFETs, this device offers notably lower on-resistance and higher continuous current capability, which translates to reduced power losses and improved efficiency. The enhanced trench technology and robust TO-220 packaging further increase reliability and thermal performance, making it a superior choice for demanding power electronics applications where durability and performance are critical.
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Typical Applications
- Switching power supplies: The device??s high current and voltage ratings make it suitable for use in industrial power supplies, delivering efficient energy conversion and robust operation under variable loads.
- Motor drives: Its fast switching characteristics and low RDS(on) contribute to precise control and minimized heat generation in industrial and automotive motor control systems.
- Solar inverters: The high reliability and efficiency of the MOSFET are beneficial for renewable energy systems where consistent performance and low losses are essential.
- Uninterruptible power supplies (UPS): The robust construction and thermal management features support reliable, high-current switching in critical backup power applications.
IPP200N25N3GXKSA1 Brand Info
This MOSFET is part of a well-established portfolio of industrial power semiconductors, recognized for their performance and reliability. Designed for integration into advanced energy management and motor control systems, it combines cutting-edge trench technology with rigorous quality standards. Its compatibility with standard TO-220 footprints and RoHS compliance further support global manufacturing and environmental initiatives, making it a trusted component for OEMs and system designers.
FAQ
What is the maximum drain-source voltage rating for the IPP200N25N3GXKSA1?
The maximum drain-source voltage is 250 V, allowing this MOSFET to be used in high-voltage systems where safe and reliable switching is a priority, such as industrial motor drives and power supplies.
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What package style is used for the IPP200N25N3GXKSA1?
This device comes in a TO-220 package, which is widely used for its excellent thermal dissipation characteristics and straightforward through-hole mounting, supporting efficient heat management in power circuits.
Is the IPP200N25N3GXKSA1 compliant with environmental standards?
Yes, the device is RoHS compliant, meaning it is manufactured without the use of hazardous substances, meeting global environmental and safety regulations for electronic components.
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How does the low RDS(on) value benefit system designers?
The low on-resistance of 2.1 m?? reduces conduction losses, which is critical for energy-efficient designs. This allows for higher current flow with less heat generation, improving overall system reliability and lowering cooling requirements.
What types of applications are best suited for the IPP200N25N3GXKSA1?
This MOSFET is ideal for use in switching power supplies, motor drives, solar inverters, and uninterruptible power supplies, where high efficiency, reliability, and robust operation are essential for optimal system performance.
