IPN70R1K4P7SATMA1 Overview
The IPN70R1K4P7SATMA1 is a high-performance N-channel MOSFET designed for demanding industrial and power conversion applications. With a maximum drain-source voltage of 700V and low RDS(on), this device is optimized for high efficiency, fast switching, and minimal conduction losses in modern power systems. Its robust design and advanced silicon technology ensure reliable operation in harsh environments, making it an ideal choice for engineers seeking dependable solutions for power management, motor drives, and industrial automation. For more industrial semiconductor solutions, visit IC Manufacturer.
IPN70R1K4P7SATMA1 Technical Specifications
| Parameter | Value |
|---|---|
| Type | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | 700 V |
| Drain Current (ID) | See datasheet for specific values |
| On-Resistance (RDS(on)) | 1.4 ?? (typical) |
| Gate Charge (Qg) | Refer to datasheet |
| Package Type | TO-220 FullPAK |
| Technology | CoolMOS? P7 |
| Operating Temperature Range | Refer to datasheet |
| Polarity | N-Channel |
IPN70R1K4P7SATMA1 Key Features
- High voltage capability up to 700V enables safe operation in a wide range of industrial and power supply applications.
- Low typical on-resistance (1.4 ??) reduces conduction losses, improving overall system efficiency and thermal management.
- Advanced CoolMOS? P7 technology supports fast switching with minimized gate charge, allowing higher frequency operation and compact designs.
- TO-220 FullPAK package provides enhanced isolation and simplifies thermal design, ensuring reliable mounting and assembly.
IPN70R1K4P7SATMA1 Advantages vs Typical Alternatives
This device offers lower on-resistance and higher voltage tolerance compared to many standard MOSFETs, enabling increased efficiency and system reliability. The optimized design with advanced silicon technology ensures reduced switching losses and supports compact, high-density power supplies. Its robust package and consistent performance make it highly suitable for industrial and high-voltage environments where longevity and efficiency are critical.
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Typical Applications
- Switch mode power supplies (SMPS), where efficient high-voltage switching and low conduction losses are essential for minimizing heat and improving energy conversion.
- Industrial motor drives that demand robust MOSFETs for handling high-voltage loads and rapid switching in automation equipment.
- Power factor correction (PFC) circuits, leveraging low RDS(on) for reduced losses and enhanced power quality.
- High voltage DC-DC converters in renewable energy systems and industrial instrumentation.
IPN70R1K4P7SATMA1 Brand Info
The IPN70R1K4P7SATMA1 belongs to the CoolMOS? P7 family, known for superior efficiency and reliable performance in high-voltage applications. Engineered by a leading semiconductor manufacturer, this device exemplifies advanced MOSFET design focused on reducing losses, supporting high switching speeds, and ensuring robust operation. The FullPAK package offers added safety and simplifies system integration, making it a trusted component for engineers in the power electronics industry.
FAQ
What is the maximum voltage rating of the IPN70R1K4P7SATMA1?
The device is rated for a maximum drain-source voltage of 700V, making it suitable for high-voltage power switching and industrial applications where robust voltage handling is necessary.
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What package is used for this MOSFET?
The IPN70R1K4P7SATMA1 is offered in a TO-220 FullPAK package, which provides electrical isolation, efficient heat dissipation, and ease of mounting for a broad range of PCB layouts and power designs.
How does the on-resistance of this device benefit power applications?
Its low typical on-resistance of 1.4 ?? minimizes conduction losses during operation, allowing for higher efficiency, reduced heat generation, and more compact thermal management in power supply designs.
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Is this component suitable for fast switching designs?
Yes, the advanced CoolMOS? P7 technology supports fast switching speeds and low gate charge, making it ideal for applications that require high-frequency operation and improved dynamic performance.
What typical applications can benefit from using the IPN70R1K4P7SATMA1?
This MOSFET is well-suited for switch mode power supplies, industrial motor drives, power factor correction circuits, and high-voltage DC-DC converters, offering efficiency, reliability, and robust voltage handling in these demanding environments.
