IPN60R2K1CEATMA1 N-Channel MOSFET, 600V 2.1??, TO-220 Package

  • Provides efficient switching for power management, helping to reduce energy loss in electronic circuits.
  • Low on-resistance minimizes heat generation, supporting higher system efficiency and simplified thermal management.
  • Compact package design enables board-space savings in densely populated layouts.
  • Ideal for use in DC-DC converters, ensuring stable voltage regulation for sensitive devices.
  • Manufactured to meet industry standards, offering consistent performance in demanding applications.
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IPN60R2K1CEATMA1 Overview

The IPN60R2K1CEATMA1 is a high-performance N-channel MOSFET designed for advanced power switching and conversion requirements. Featuring a robust TO-220FP package, this device supports high voltage and current ratings, making it suitable for demanding industrial and power supply environments. Its low on-resistance and efficient switching behavior deliver significant energy savings and thermal management benefits, contributing to reliable operation in a wide range of electronic systems. For further details, visit IC Manufacturer.

IPN60R2K1CEATMA1 Technical Specifications

ParameterValue
Product TypeMOSFET N-CH 600V 2.1A TO220FP
Drain to Source Voltage (Vds)600 V
Continuous Drain Current (Id)2.1 A
On-Resistance (Rds(on))2.1 ??
Gate Charge (Qg)Not specified
Package/CaseTO-220FP
Mounting TypeThrough Hole
PolarityN-Channel
RoHS StatusRoHS Compliant

IPN60R2K1CEATMA1 Key Features

  • High Voltage Tolerance: With a maximum drain to source voltage of 600 V, this device is ideal for circuits requiring wide voltage margins and robust isolation.
  • Low On-State Resistance: The Rds(on) of 2.1 ?? minimizes conduction losses, enhancing system efficiency and reducing heat generation during operation.
  • Reliable TO-220FP Package: The fully encapsulated package improves thermal performance and provides safe handling in high-voltage applications.
  • RoHS Compliance: Ensures environmental friendliness and compatibility with global manufacturing requirements.

IPN60R2K1CEATMA1 Advantages vs Typical Alternatives

Compared to standard MOSFETs, this device offers superior voltage handling and a low on-resistance, resulting in higher efficiency and reduced power loss. Its TO-220FP package supports robust thermal management, while RoHS compliance aligns with global safety and environmental standards. These function-driven advantages suit demanding industrial and power electronics applications.

Typical Applications

  • Switched-Mode Power Supplies (SMPS): The high voltage and current capabilities make it suitable for use in primary side switching of power supplies, ensuring stable and efficient energy conversion with minimal heat buildup.
  • Motor Drives: Used in industrial motor control circuits where reliable high-voltage switching and efficiency are critical to performance.
  • Lighting Ballasts: Suitable for electronic ballast circuits that require high-voltage MOSFETs for reliable and long-lasting operation.
  • UPS and Inverter Systems: Provides dependable switching for uninterruptible power supplies and inverter topologies, ensuring power reliability during critical operations.

IPN60R2K1CEATMA1 Brand Info

The IPN60R2K1CEATMA1 is engineered to meet the rigorous demands of modern industrial and power management systems. This product demonstrates the manufacturer’s commitment to quality and performance, offering advanced features such as high voltage capability, reliable encapsulated packaging, and global compliance. Its versatility and efficiency make it a preferred choice for engineers seeking robust solutions in high-voltage circuit designs.

FAQ

What package type is used for IPN60R2K1CEATMA1 and why is it beneficial?

The device is housed in a TO-220FP package, which provides enhanced thermal dissipation and electrical isolation. This makes it suitable for high-voltage and high-current applications where robust performance and safety are priorities.

Is the IPN60R2K1CEATMA1 compliant with environmental standards?

Yes, this MOSFET is RoHS compliant, ensuring it meets strict environmental and safety regulations. This compliance simplifies its use in global applications and environmentally conscious manufacturing processes.

What is the maximum drain to source voltage supported by this MOSFET?

The device is rated for a maximum drain to source voltage (Vds) of 600 V, making it suitable for circuits requiring high-voltage operation and robust isolation.

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Can this device be used in through-hole mounting configurations?

Yes, the MOSFET is designed for through-hole mounting. This allows for secure mechanical attachment and reliable electrical connection in power boards and industrial assemblies.

What type of electronic systems is this MOSFET best suited for?

With its high voltage and current ratings, the device is ideal for use in switched-mode power supplies, inverter circuits, industrial motor drives, and lighting ballasts, where efficiency and long-term reliability are essential.

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