IPN60R1K5CEATMA1 Overview
The IPN60R1K5CEATMA1 is a high-performance power MOSFET designed for demanding industrial and power management applications. Engineered to deliver efficient switching and low on-resistance, this device supports robust operation in a variety of circuit topologies. With a compact TO-220 package and advanced silicon technology, it provides reliable thermal management and high current handling. Its characteristics make it suitable for modern power conversion systems where performance, reliability, and efficiency are paramount. For detailed component sourcing and manufacturer information, visit IC Manufacturer.
IPN60R1K5CEATMA1 Technical Specifications
| Parameter | Value |
|---|---|
| Type | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | 600 V |
| Continuous Drain Current (ID) | 7.2 A |
| RDS(on) (Max) | 1.5 ?? |
| Gate Charge (Qg) | 25 nC |
| Package / Case | TO-220-3 |
| Operating Temperature Range | -55??C to +150??C |
| Configuration | Single |
| Technology | CoolMOS? CE Superjunction |
IPN60R1K5CEATMA1 Key Features
- Low RDS(on) of 1.5 ?? minimizes conduction losses, enhancing overall energy efficiency in high-voltage switching designs.
- 600 V drain-source voltage rating supports use in high-voltage topologies, providing safety margin in industrial and SMPS environments.
- Optimized gate charge of 25 nC allows for fast switching, reducing switching losses and heat generation during operation.
- TO-220-3 package offers effective heat dissipation, supporting stable operation at elevated power levels.
- Wide operating temperature range from -55??C to +150??C ensures robustness and reliability across diverse application scenarios.
- CoolMOS? CE technology delivers improved performance compared to standard planar MOSFETs, ideal for cost-sensitive designs needing efficiency.
IPN60R1K5CEATMA1 Advantages vs Typical Alternatives
Compared to conventional MOSFETs, this device provides lower on-resistance for the same voltage class, resulting in reduced conduction losses and increased overall efficiency. The advanced superjunction technology supports higher switching frequencies and compact design. Its thermal characteristics and wide temperature range promote long-term reliability, making it a strong choice for industrial and power conversion systems where stable operation is critical.
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Typical Applications
- Switched-mode power supplies (SMPS): The device is optimized for primary-side switching in SMPS, enabling efficient energy conversion and minimizing losses in both commercial and industrial power supply units.
- Motor drives: Suitable for inverter sections within motor control circuits, where fast switching and high voltage withstand are key to reliable drive operation.
- LED lighting power converters: Used in high-voltage LED driver circuits, supporting compact and efficient lighting systems in industrial and commercial environments.
- Adapters and chargers: Ideal for use in high-voltage side switching of adapters and battery chargers, combining safety, efficiency, and thermal stability.
IPN60R1K5CEATMA1 Brand Info
This product belongs to the CoolMOS? CE series, leveraging superjunction technology to deliver enhanced power efficiency and performance. Specifically developed for cost-sensitive applications, it balances advanced features with affordability. Its robust design and reliable thermal management make it suitable for industrial power systems, power supplies, and lighting. The series is recognized for supporting efficient and compact designs, meeting modern demands for high voltage and reliability in electronic systems.
FAQ
What type of applications benefit most from using the IPN60R1K5CEATMA1?
This MOSFET is well-suited for high-voltage and high-efficiency power conversion applications, such as switched-mode power supplies, motor drives, and LED lighting power converters, where reliable performance and low losses are essential for system stability.
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How does the device??s superjunction technology affect efficiency?
The use of CoolMOS? CE superjunction technology allows the device to achieve lower RDS(on) and reduced gate charge, directly translating to minimized conduction and switching losses. This supports higher efficiency and cooler operation in demanding systems.
What are the thermal management benefits of the TO-220 package?
The TO-220-3 package provides a robust structure for mounting and enables efficient heat dissipation. This is critical for maintaining performance and longevity in power applications where the device may handle significant current and power dissipation.
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Is this device suitable for use in wide temperature environments?
Yes, with an operating temperature range from -55??C to +150??C, the MOSFET is designed for reliable operation in both harsh industrial environments and commercial applications where temperature fluctuations may occur.
What makes this device a cost-effective solution?
The combination of advanced superjunction technology and optimized specifications allows this MOSFET to deliver high performance at a competitive price point, making it ideal for designs where both efficiency and cost sensitivity are important considerations.
