IPL60R060CFD7AUMA1 Overview
The IPL60R060CFD7AUMA1 is a high-efficiency power MOSFET designed for demanding industrial and commercial power management applications. Featuring advanced silicon technology, this device delivers low on-resistance and robust voltage handling, making it suitable for switching and amplification in energy-conscious designs. Its optimized package enables straightforward integration into a wide range of power conversion systems. With proven reliability and strong electrical performance, this MOSFET is a solid choice for engineers seeking efficiency and durability. For more information, visit IC Manufacturer.
IPL60R060CFD7AUMA1 Technical Specifications
| Parameter | Value |
|---|---|
| Product Category | MOSFETs |
| Transistor Polarity | N-Channel |
| Drain-Source Voltage (Vds) | 600 V |
| Continuous Drain Current (Id) | 46 A |
| Rds(on) (Max) | 60 mOhms |
| Power Dissipation (Pd) | 208 W |
| Gate Charge (Qg, Typical) | 140 nC |
| Package / Case | TO-247-3 |
| Mounting Style | Through Hole |
| Channel Mode | Enhancement |
IPL60R060CFD7AUMA1 Key Features
- Low on-resistance of 60 mOhms minimizes conduction losses, resulting in higher system efficiency for power conversion applications.
- High voltage capability up to 600 V enables use in medium to high-voltage switching circuits, expanding its range of suitable applications.
- Robust maximum drain current of 46 A supports high-load designs, providing flexibility for demanding industrial environments.
- Optimized gate charge of 140 nC allows for faster switching, reducing transition times and improving overall response in high-frequency operations.
IPL60R060CFD7AUMA1 Advantages vs Typical Alternatives
This device stands out due to its combination of low Rds(on) and high voltage rating, which delivers reduced conduction losses and improved thermal performance compared to standard MOSFETs. The high drain current capacity and reliable TO-247-3 package further enhance durability and ease of integration, making it a preferred choice for power electronics engineers seeking robust, efficient solutions.
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Typical Applications
- Switched-mode power supplies (SMPS) for industrial automation, where high efficiency and thermal reliability are critical to ensure stable operation and extend equipment lifespan.
- Motor drive circuits in factory automation and robotics, benefiting from the device’s robust current handling and voltage capabilities.
- Renewable energy inverters, such as solar or wind power conversion systems, where reliability and high-voltage performance support continuous operation.
- Uninterruptible power supplies (UPS) and backup power systems, leveraging the low on-resistance and high power dissipation to maintain efficient and reliable energy delivery.
IPL60R060CFD7AUMA1 Brand Info
The IPL60R060CFD7AUMA1 represents a modern evolution in N-channel MOSFET technology, supporting high-performance requirements in industrial and commercial sectors. This device is part of a portfolio focused on power efficiency, reliability, and easy integration. Its robust TO-247-3 package and advanced silicon characteristics offer superior thermal management and high current capabilities, reflecting the brand??s commitment to durable, application-focused semiconductor solutions.
FAQ
What type of power applications is this MOSFET best suited for?
This MOSFET is ideal for applications requiring high efficiency and voltage tolerance, such as switched-mode power supplies, motor drives, renewable energy inverters, and other systems demanding robust performance and reliability.
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How does the low Rds(on) value benefit my design?
A low Rds(on) of 60 mOhms reduces conduction losses during operation, which directly improves the overall energy efficiency of power circuits and aids in heat management, resulting in more compact and cost-effective designs.
What are the advantages of the TO-247-3 package?
The TO-247-3 package provides excellent heat dissipation and mechanical stability, making it suitable for high-power applications. It also simplifies the mounting process in through-hole PCB designs, supporting robust assembly practices.
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Is this MOSFET suitable for high-frequency switching?
Yes, with a gate charge of 140 nC (typical), the device supports fast switching speeds, making it well-suited for high-frequency applications where reduced switching losses and improved system response are desired.
Can this device handle large current loads reliably?
With a continuous drain current rating of 46 A and a power dissipation of 208 W, the device is engineered to handle significant current loads reliably in demanding industrial environments without compromising performance or safety.
