IPF019N12NM6ATMA1 Power MOSFET, N-Channel, OptiMOS, TO-220 Package

  • Delivers efficient switching performance, enabling precise control in power management and conversion circuits.
  • Features an N-Channel MOSFET configuration, important for achieving low on-resistance and high-speed operation.
  • Compact package design allows for board-space savings and easier integration into space-constrained electronic assemblies.
  • Ideal for use in DC-DC converters where efficient power switching enhances overall system performance.
  • Manufactured to meet industry reliability standards for stable, long-term operation in demanding applications.
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IPF019N12NM6ATMA1 Overview

The IPF019N12NM6ATMA1 is a high-performance N-channel MOSFET engineered for demanding industrial and power management applications. Its advanced design delivers efficient switching, low conduction losses, and robust thermal performance, making it a reliable choice for engineers focused on energy efficiency and system reliability. By combining low on-resistance with high current capability, this semiconductor component addresses the critical requirements of modern power circuits. Explore the full capabilities and sourcing options at IC Manufacturer.

IPF019N12NM6ATMA1 Technical Specifications

ParameterValue
Transistor TypeN-Channel MOSFET
Drain-Source Voltage (VDS)120V
Continuous Drain Current (ID)100A
RDS(on) (Max)19 m??
Gate Charge (Qg)Not specified
Package / CasePG-TDSON-8
Mounting TypeSurface Mount (SMD/SMT)
TechnologyPower MOSFET

IPF019N12NM6ATMA1 Key Features

  • High drain-source voltage rating of 120V, supporting robust operation in high-voltage switching circuits and ensuring safe voltage margins for industrial designs.
  • Low RDS(on) of just 19 m?? minimizes conduction losses, boosting overall energy efficiency and reducing heat generation in power conversion systems.
  • Surface-mount PG-TDSON-8 package simplifies PCB integration and thermal management, supporting compact layouts and efficient heat dissipation.
  • High continuous drain current capability (100A) enables reliable operation in demanding load conditions, ideal for motor drives and power supplies.

IPF019N12NM6ATMA1 Advantages vs Typical Alternatives

This N-channel MOSFET offers a compelling balance of low on-resistance, high current handling, and robust voltage ratings, making it superior to many conventional alternatives. Its efficient surface-mount package and strong thermal characteristics help reduce energy losses and simplify design challenges, especially in demanding industrial and power management systems.

Typical Applications

  • Power supply switching: The device is well-suited for primary- and secondary-side switching in high-efficiency power supplies, supporting both low conduction losses and high current throughput.
  • Motor control: Its high current and voltage ratings make it ideal for motor driver circuits in automation or industrial robotics.
  • DC-DC converters: The low RDS(on) and SMD package enable compact, efficient DC-DC conversion stages in telecom and server equipment.
  • Battery management systems: High current capability supports protective switching and load management in advanced battery packs.

IPF019N12NM6ATMA1 Brand Info

The IPF019N12NM6ATMA1 is part of a reputable family of power MOSFETs known for reliability and efficiency in industrial applications. It reflects the manufacturer??s commitment to delivering robust, high-quality semiconductor solutions that address the evolving demands of modern power electronics. The product??s advanced specifications and proven package design make it a preferred option for engineers seeking dependable performance in both new designs and established platforms.

FAQ

What is the main advantage of using the IPF019N12NM6ATMA1 in power circuits?

The main advantage lies in its combination of low on-resistance and high current capability, which reduces power losses and enhances overall energy efficiency. This allows designers to achieve lower thermal stress and improved reliability in power supply and motor control applications.

Which package does the IPF019N12NM6ATMA1 use, and what are its benefits?

It uses the PG-TDSON-8 surface-mount package, which offers excellent thermal conductivity and compact size. This enables efficient heat dissipation and supports high-density PCB layouts, making it ideal for space-constrained industrial designs.

Is this MOSFET suitable for high-current applications?

Yes, with a continuous drain current rating of 100A, the device is well-suited for high-current applications such as motor drives, battery management, and power distribution circuits, where robust performance is essential.

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How does the device’s on-resistance affect efficiency?

A low on-resistance (19 m?? max) directly reduces conduction losses during operation. This leads to higher system efficiency, less heat generation, and lower requirements for additional thermal management components.

Can the IPF019N12NM6ATMA1 be integrated into automated assembly lines?

Absolutely. Its SMD/SMT package allows for standard automated pick-and-place and soldering processes, streamlining manufacturing and ensuring consistent quality in high-volume production environments.

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