IPD90P04P4L04ATMA2 Overview
The IPD90P04P4L04ATMA2 is a power MOSFET designed for demanding industrial and automotive environments requiring efficient power switching and robust reliability. Engineered with advanced silicon technology, it delivers low RDS(on) and high current handling in a compact footprint. Its optimized characteristics support both high-speed switching and thermal management, making it a suitable choice for applications such as load switching, motor control, and power management circuits. For engineers seeking a balance of performance, integration, and reliability, this device delivers consistent results. Learn more at IC Manufacturer.
IPD90P04P4L04ATMA2 Technical Specifications
| Parameter | Value |
|---|---|
| Product Type | P-Channel MOSFET |
| Drain-Source Voltage (VDS) | -40 V |
| Continuous Drain Current (ID) | -90 A |
| RDS(on) (max) | 4.4 m?? |
| Gate-Source Voltage (VGS) | ?I20 V |
| Power Dissipation (PD) | Up to 150 W |
| Package Type | PG-TDSON-8 (SuperSO8) |
| Operating Temperature Range | -55??C to +175??C |
IPD90P04P4L04ATMA2 Key Features
- Ultra-low RDS(on): With a maximum on-resistance of just 4.4 m??, this device significantly reduces conduction losses, improving overall system efficiency in high-current applications.
- High Current Capability: Supports continuous drain current up to -90 A, which is critical for robust load switching, motor drives, and power distribution systems.
- Thermal Performance: The advanced package and silicon design enable excellent heat dissipation, supporting higher power density and reliability in compact layouts.
- Wide Operating Temperature: Operates reliably from -55??C to +175??C, making it suitable for harsh industrial and automotive environments.
- Compact PG-TDSON-8 Package: Space-saving SuperSO8 package simplifies PCB layout and supports automated assembly processes.
- Robust Gate Tolerance: ?I20 V gate-source voltage enhances design flexibility and protection against voltage spikes.
IPD90P04P4L04ATMA2 Advantages vs Typical Alternatives
Compared to standard P-channel MOSFETs, this device offers markedly lower on-resistance, resulting in reduced power losses and improved energy efficiency. Its high current handling and compact PG-TDSON-8 package enable more streamlined designs with higher power density. These advantages make it a preferred solution for engineers prioritizing reliability, integration, and thermal management in demanding environments.
🔥 Best-Selling Products
Texas Instruments BQ24075 Linear Battery Charger IC – 5mm x 4mm QFN Package
Texas Instruments INA219 Current Sensor Module – SOIC Package, Precision Monitoring
Texas Instruments LM4041 Precision Voltage Reference – SOT-23 Package
Texas Instruments OPA2134 Audio Op Amp – Dual, High-Performance, SOIC-8 Package
Typical Applications
- Automotive Power Switching: Ideal for battery management, e-fuse designs, and high-side load switching in vehicles, where low RDS(on) and robust current handling are essential to reduce voltage drop and heat.
- Industrial Motor Control: Used in inverter circuits, motor drivers, and relay replacement, providing efficient switching for DC and brushless motors.
- Power Management Modules: Well-suited for DC-DC converters, hot-swap circuits, and power distribution units, offering low conduction losses and compact design.
- Electronic Protection Circuits: Supports overcurrent protection, reverse polarity protection, and load disconnect functions in both consumer and industrial electronics.
IPD90P04P4L04ATMA2 Brand Info
The IPD90P04P4L04ATMA2 is part of a renowned line of discrete power MOSFETs recognized for their reliability and efficiency in automotive and industrial sectors. Featuring advanced silicon processes and robust packaging, this product is engineered to meet strict quality and performance standards. Its trusted performance and high integration level make it a preferred choice for system designers seeking longevity and consistent operation across a broad range of applications.
FAQ
What are the main benefits of using a P-channel MOSFET like this in automotive designs?
P-channel MOSFETs simplify high-side switching, allowing easier control in automotive loads. This device??s low RDS(on) and high current capability reduce losses and improve system efficiency, especially in battery management and protection circuits.
🌟 Featured Products
“Buy MAX9312ECJ+ Precision Voltage Comparator in DIP Package for Reliable Performance”
QCC-711-1-MQFN48C-TR-03-1 Bluetooth Audio SoC with MQFN48C Package
0339-671-TLM-E Model – High-Performance TLM-E Package for Enhanced Functionality
1-1415898-4 Connector Housing, Electrical Wire-to-Board, Receptacle, Packaged
How does the thermal performance support high-power applications?
Its PG-TDSON-8 package and advanced silicon design provide excellent heat dissipation, supporting up to 150 W power dissipation. This ensures stable operation in high-current or continuous-duty applications where thermal management is critical.
Can this device be used in harsh industrial environments?
Yes, its wide operating temperature range from -55??C to +175??C and robust package make it suitable for use in demanding industrial and automotive settings, ensuring reliability even under challenging conditions.
📩 Contact Us
What PCB layout considerations should be taken for optimal performance?
To maximize thermal and electrical performance, ensure adequate copper area for heat spreading, minimize trace resistance, and follow package-specific guidelines for the PG-TDSON-8 footprint. Good layout practices help achieve low RDS(on) and efficient cooling.
Is this device suitable for switching inductive loads?
Yes, the high current rating and rugged design allow it to switch inductive loads such as motors and solenoids. However, proper external protection, such as freewheeling diodes, is recommended to safeguard against voltage transients.
