IPD70N10S312ATMA1 Overview
The IPD70N10S312ATMA1 is a robust N-channel MOSFET designed for demanding power management and switching applications. Offering a balance of low on-state resistance and high voltage tolerance, this device is ideal for engineers seeking efficiency and reliability in automotive, industrial, and general-purpose circuits. Its advanced silicon technology and compact TO-252 (DPAK) surface-mount package enable straightforward PCB integration and enhanced thermal performance. With its focus on switching efficiency and dependable operation, this MOSFET meets the rigorous needs of modern electronic designs. For more details, visit IC Manufacturer.
IPD70N10S312ATMA1 Technical Specifications
| Parameter | Value |
|---|---|
| Transistor Type | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | 100 V |
| Continuous Drain Current (ID) | 70 A |
| RDS(on) (Max) | 3.1 m? |
| Gate-Source Voltage (VGS) | ?I20 V |
| Package | TO-252 (DPAK), Surface Mount |
| Mounting Type | Surface Mount |
| Polarity | N-Channel |
| Technology | MOSFET (MetalÿOxideÿSemiconductor Field-Effect Transistor) |
IPD70N10S312ATMA1 Key Features
- High current handling capability ensures reliable operation in power-intensive applications, supporting up to 70 A continuous drain current.
- Low RDS(on) of 3.1 m? reduces conduction losses, improving efficiency and minimizing heat generation in switching circuits.
- 100 V drain-source voltage rating enables safe operation in high-voltage environments, enhancing the device??s versatility for industrial and automotive uses.
- Surface-mount TO-252 (DPAK) package supports compact PCB layouts and efficient thermal dissipation, vital for high-density designs.
IPD70N10S312ATMA1 Advantages vs Typical Alternatives
This MOSFET provides a compelling combination of low on-resistance and high current capability, offering improved energy efficiency and reduced heat dissipation versus typical alternatives. Its robust voltage rating and compact package allow for seamless integration into demanding systems, while the advanced silicon process ensures high reliability and stable switching performance under load.
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Typical Applications
- Automotive powertrain and body electronics, where high current and efficiency are critical for reliable operation in harsh environments.
- Switching power supplies and DC-DC converters in industrial automation, benefiting from low RDS(on) and high current support.
- Motor control circuits, where rapid switching and robust voltage handling improve overall system responsiveness and longevity.
- Load switching and protection in battery-powered equipment, leveraging efficient operation to extend system uptime and reduce thermal stress.
IPD70N10S312ATMA1 Brand Info
This product is part of a trusted line of N-channel MOSFETs tailored for efficient power management and robust switching. Manufactured using advanced semiconductor processes, it offers an optimized balance of performance and reliability for engineers in automotive, industrial, and general electronic markets. The focus on low on-resistance, high current tolerance, and compact surface-mount packaging highlights its suitability for next-generation electronic designs requiring both efficiency and durability.
FAQ
What package type does the IPD70N10S312ATMA1 use, and why is it significant?
This MOSFET is housed in a TO-252 (DPAK) surface-mount package, which provides efficient heat dissipation and supports high current handling. The compact footprint also enables space-saving PCB designs for various applications.
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How does the low RDS(on) value benefit power system designers?
The low maximum on-resistance of 3.1 m? minimizes conduction losses during switching, directly improving energy efficiency and reducing thermal buildup. This is especially important in high-power or battery-operated systems.
Is this device suitable for use in automotive applications?
Yes, the high voltage rating and current capability make it well-suited for automotive environments, including powertrain and body electronics. Its surface-mount design also aids in automated assembly and system integration.
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What voltage and current ratings define its use cases?
With a drain-source voltage of 100 V and a continuous drain current of 70 A, this MOSFET is designed for demanding power switching roles, supporting both high-voltage and high-current circuits in industrial and automotive sectors.
Can the IPD70N10S312ATMA1 be used in compact or high-density circuit boards?
Absolutely. The TO-252 (DPAK) surface-mount package is ideal for space-constrained designs, offering reliable performance and efficient thermal management in high-density layouts commonly found in modern electronics.
