IPD110N12N3GATMA1 Overview
The IPD110N12N3GATMA1 is an advanced N-channel MOSFET designed for high-performance power management and switching applications. Built with a focus on low on-resistance and high efficiency, this device delivers reliable operation in demanding industrial and commercial systems. Its robust construction and optimized electrical characteristics make it suitable for a wide range of automotive, industrial, and consumer electronics. With its proven reliability and efficiency, the IPD110N12N3GATMA1 helps engineers achieve superior system-level performance. For additional details, visit IC Manufacturer.
IPD110N12N3GATMA1 Technical Specifications
| Parameter | Value |
|---|---|
| Transistor Type | N-Channel MOSFET |
| Drain-Source Voltage (Vds) | 120V |
| Continuous Drain Current (Id) | 110A |
| On-Resistance (Rds(on)) | 3.1 m?? |
| Gate Charge (Qg) | 112 nC |
| Package | TO-252 (DPAK) |
| Operating Temperature Range | -55??C to +175??C |
| Polarity | N-Channel |
| Technology | Trench MOSFET |
IPD110N12N3GATMA1 Key Features
- Low on-resistance of 3.1 m?? ensures minimal conduction losses, improving overall system efficiency and reducing heat generation in power circuits.
- High continuous drain current capability up to 110A makes this MOSFET suitable for demanding load-switching and motor drive applications where current handling is critical.
- Wide operating temperature range from -55??C to +175??C provides reliable performance in both industrial and automotive environments, accommodating harsh and variable conditions.
- Compact TO-252 (DPAK) package enables efficient PCB design and thermal management, supporting higher-density layouts in modern electronic systems.
- Trench MOSFET technology delivers fast switching performance, which is essential for high-frequency power conversion and digital power applications.
IPD110N12N3GATMA1 Advantages vs Typical Alternatives
Compared to standard MOSFETs, this component stands out for its low Rds(on) and high current capability, which translate to improved efficiency and reduced power loss in critical applications. The device??s robust thermal performance and reliable switching behavior make it a preferred choice for engineers seeking both durability and energy efficiency in power electronic designs. These advantages help streamline system integration and enhance long-term reliability.
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Typical Applications
- Switching power supplies: Utilized for efficient power conversion, the MOSFET??s low on-resistance and high current capacity help minimize losses and thermal stress in switched-mode power supply topologies.
- Motor control: Suitable for use in DC motor drive circuits, where robust current handling and rapid switching are essential for precise speed and torque control.
- Automotive electronic control units: Supports high-reliability power switching in automotive ECUs, including applications such as electric power steering and battery management.
- Load switching in industrial automation: Provides reliable switching of heavy loads in industrial automation equipment, contributing to improved efficiency and system longevity.
IPD110N12N3GATMA1 Brand Info
The IPD110N12N3GATMA1 is manufactured by a leading global supplier specializing in advanced semiconductor solutions. This device reflects the brand??s commitment to delivering high-quality, energy-efficient, and robust MOSFETs for industrial, automotive, and consumer markets. Its design leverages state-of-the-art trench technology to meet the rigorous demands of modern power management and switching applications.
FAQ
What package type is used for the IPD110N12N3GATMA1, and how does it impact PCB design?
This device is provided in a TO-252 (DPAK) surface-mount package, which offers a compact form factor suitable for high-density PCB layouts. The package supports effective heat dissipation and simplifies automated assembly, making it ideal for space-constrained power electronics.
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How does the low Rds(on) value benefit end applications?
A low on-resistance of 3.1 m?? significantly reduces conduction losses during operation. This results in higher energy efficiency, lower heat generation, and improved overall system reliability, particularly in high-current switching applications where thermal management is critical.
Is the IPD110N12N3GATMA1 suitable for automotive environments?
Yes, with an operating temperature range from -55??C to +175??C, this MOSFET is well-suited for automotive applications. Its robust construction and high current handling make it reliable for use in electronic control units, battery management, and power distribution systems.
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What switching characteristics are notable for this device?
The device utilizes trench MOSFET technology, which enables fast switching speeds and efficient operation at high frequencies. This characteristic is valuable in power conversion, motor drives, and digital power supply applications where rapid switching is essential for performance.
Can this MOSFET be used in industrial automation systems?
Absolutely. Its high current capability, wide temperature range, and efficient switching performance make it a strong choice for load switching and power management in industrial automation, contributing to greater system reliability and energy savings.
