IPD046N08N5ATMA1 Overview
The IPD046N08N5ATMA1 is an advanced N-channel MOSFET designed for efficient switching and power management in industrial and commercial environments. With a focus on low on-resistance and robust performance, this device is optimized for high-speed operation and minimal power loss. Its compact footprint and proven reliability make it a preferred choice for applications requiring precise control and thermal stability. For more information, visit IC Manufacturer.
IPD046N08N5ATMA1 Technical Specifications
| Parameter | Value |
|---|---|
| Transistor Type | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | 80 V |
| Continuous Drain Current (ID) | 46 A |
| On-Resistance (RDS(on)) | 5.3 m?? |
| Gate Charge (Qg) | 40 nC |
| Package Type | TO-252 (DPAK) |
| Operating Temperature Range | -55??C to +175??C |
| Power Dissipation | ~80 W (at Tc) |
| Polarity | N-Channel |
IPD046N08N5ATMA1 Key Features
- Low on-resistance of 5.3 m?? at 10 V gate drive enables reduced conduction losses for higher energy efficiency.
- High continuous drain current capability (46 A) supports demanding power switching and motor control applications.
- Optimized for fast switching with a gate charge of only 40 nC, minimizing switching losses and improving overall system response.
- Robust thermal performance with an operating temperature range up to 175??C, ensuring reliability in harsh environments.
IPD046N08N5ATMA1 Advantages vs Typical Alternatives
This N-channel MOSFET offers significant advantages over standard alternatives through its combination of low on-resistance, high current handling, and fast switching capabilities. These attributes reduce heat generation, enhance system efficiency, and provide stable operation even under heavy loads. Its compact TO-252 package further supports space-constrained designs, making it ideal for modern power electronics.
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Typical Applications
- Switched-mode power supplies (SMPS): The device??s low RDS(on) and high current capability enable efficient and reliable switching in SMPS topologies for industrial and commercial power supplies.
- Motor drives: Supports efficient control of DC motors and brushless motors, reducing power losses and improving drive reliability.
- DC-DC converters: Ensures excellent efficiency and fast transient response in step-down or step-up converter circuits.
- Load switching: Suitable for high-current load switching in automotive, industrial automation, and battery management systems.
IPD046N08N5ATMA1 Brand Info
The IPD046N08N5ATMA1 is part of an industry-leading MOSFET portfolio recognized for high performance and reliability. This product exemplifies the brand??s commitment to delivering efficient power management solutions for advanced electronics. Designed to meet the strict requirements of industrial and commercial applications, it integrates proven process technology and robust packaging to ensure long-term, dependable operation.
FAQ
What makes the IPD046N08N5ATMA1 suitable for high-efficiency power applications?
The device features low on-resistance and a fast switching profile, which together significantly reduce conduction and switching losses. This makes it highly effective in power supplies and converters that require optimal energy efficiency and thermal performance.
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Can this device operate reliably in high-temperature environments?
Yes, it is rated for operation up to 175??C, allowing for reliable use in demanding thermal conditions such as industrial automation, motor drives, and high-density power conversion systems.
What is the primary advantage of the TO-252 (DPAK) package?
The TO-252 package delivers a compact footprint with excellent thermal dissipation properties. This supports space-saving designs while ensuring the device can handle significant power levels without excessive temperature rise.
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Is this MOSFET suitable for automotive applications?
Given its high current capability, wide temperature range, and robust switching characteristics, it is well-suited for various automotive power management and load switching applications, provided system-level qualification is met.
What are common considerations when designing with this MOSFET?
Key considerations include ensuring appropriate gate drive voltage for full enhancement, adequate PCB thermal management, and correct handling of the device??s power dissipation to maximize reliability and efficiency in end applications.
