IPD036N04LGATMA1 Power MOSFET, N-Channel, OptiMOS, PG-TSDSON-8 Package

  • Provides efficient switching for power management, enabling reduced energy loss in electronic circuits.
  • Low on-resistance ensures minimal conduction losses, which is critical for keeping devices cooler during operation.
  • The compact package saves valuable board space, supporting higher density designs in modern electronics.
  • Ideal for use in automotive or industrial systems, delivering reliable performance in demanding environments.
  • Manufactured to meet stringent industry standards, ensuring consistent operation over time in various conditions.
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产品上方询盘

IPD036N04LGATMA1 Overview

The IPD036N04LGATMA1 is a high-performance N-channel MOSFET designed for demanding power management applications. With its low on-state resistance and optimized gate charge, it delivers efficient switching and minimized conduction losses. This device is ideal for use in modern switching power supplies, DC-DC converters, and motor control circuits, where reliability and compact integration are required. Its rugged construction, robust thermal characteristics, and advanced package design make it a preferred solution for engineers seeking efficiency and durability in industrial and automotive environments. For more details, visit IC Manufacturer.

IPD036N04LGATMA1 Technical Specifications

AttributeValue
Product CategoryMOSFETs – Single
Transistor PolarityN-Channel
Drain-Source Voltage (Vds)40 V
Continuous Drain Current (Id)100 A
On-State Resistance (Rds(on))3.6 mOhm @ 10V
Gate Threshold Voltage (Vgs(th))1V – 2.5V
Package / CasePG-TDSON-8
Operating Temperature Range-55??C to +175??C
Mounting TypeSurface Mount
Lead Free / RoHS CompliantYes

IPD036N04LGATMA1 Key Features

  • Ultra-low Rds(on) of 3.6 mOhm at 10V, enabling minimized conduction losses and improved energy efficiency in power circuits.
  • High continuous drain current handling (100 A), ensuring robust operation in high-current switching applications.
  • Broad operating temperature range from -55??C to +175??C for reliable performance in harsh environments and demanding industrial or automotive conditions.
  • Standard PG-TDSON-8 surface-mount package allows for compact PCB layouts and efficient thermal management.
  • RoHS compliance and lead-free design support environmentally friendly manufacturing and regulatory adherence.
  • Optimized gate threshold voltage for compatibility with logic-level drive circuits, simplifying design integration.

IPD036N04LGATMA1 Advantages vs Typical Alternatives

This power MOSFET stands out due to its exceptionally low on-state resistance, which reduces power dissipation and increases overall efficiency compared to standard MOSFETs. Its high current handling, wide temperature range, and compact surface-mount package provide a combination of ruggedness and flexibility, making it an optimal choice for precision power control and advanced switching designs.

Typical Applications

  • Switching power supplies: The device??s high efficiency and current capability make it suitable for high-frequency switched-mode power supplies where thermal management and compact size are critical.
  • DC-DC converters: Used in automotive and industrial DC-DC converters, this MOSFET helps achieve lower losses and improved reliability in voltage regulation circuits.
  • Motor control: Its robust current rating and thermal performance support demanding brushed and brushless DC motor drive applications.
  • Battery management systems: Well-suited for protection and switching functions in advanced battery management and energy storage solutions.

IPD036N04LGATMA1 Brand Info

The IPD036N04LGATMA1 is part of a trusted semiconductor portfolio known for its quality, reliability, and innovation in power management solutions. Designed for efficiency and high-performance, this MOSFET is engineered to meet the needs of modern industrial and automotive applications where compactness, ruggedness, and thermal stability are essential. Its compliance with industry standards ensures dependable integration into new and existing designs.

FAQ

What is the primary benefit of the IPD036N04LGATMA1??s ultra-low Rds(on)?

The extremely low on-state resistance reduces conduction losses during operation, which translates to less heat generation and higher efficiency in power delivery??critical for energy-conscious designs in industrial and automotive electronics.

Can this MOSFET be directly driven by logic-level circuits?

With its optimized gate threshold voltage, the device can generally be driven by logic-level signals, simplifying the driver circuitry and making it easier to integrate into a wide variety of system architectures.

Is the IPD036N04LGATMA1 suitable for high-current motor control?

Yes, its 100 A continuous drain current rating and robust thermal characteristics make it well-suited for both brushed and brushless DC motor control applications, where reliability and current handling are vital.

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产品中间询盘

What packaging advantages does the PG-TDSON-8 provide?

The PG-TDSON-8 surface-mount package offers a low profile for compact designs and efficient heat dissipation, allowing designers to achieve high power density while maintaining reliable thermal performance.

Does the device comply with environmental and regulatory standards?

Yes, the IPD036N04LGATMA1 is RoHS compliant and lead-free, supporting environmentally responsible manufacturing and ensuring compatibility with global regulatory requirements for electronic components.

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