IPB95R130PFD7ATMA1 N-Channel MOSFET, TO-220 Package, Power Transistor

IPB95R130PFD7ATMA1 Overview

The IPB95R130PFD7ATMA1 is a high-performance N-channel MOSFET designed for demanding industrial and power management applications. Engineered for optimal efficiency and low power loss, this device supports robust switching and power conversion needs in compact systems. Its advanced trench MOSFET technology enables high-speed operation and increased reliability, making it a preferred choice for engineers focusing on modern energy systems. For more details and supply options, visit the IC Manufacturer website.

IPB95R130PFD7ATMA1 Technical Specifications

IPB95R130PFD7ATMA1 Key Features

• High Voltage Tolerance: With a drain-source voltage rating up to 950V, this device is well-suited for high-voltage switching, enhancing safety margin in industrial power designs.
• Low R_DS(on): The low on-resistance of 0.13 ohms reduces conduction losses, supporting higher efficiency and thermal performance for power supplies and inverters.
• Efficient Switching: Fast gate charge characteristics (46 nC) enable rapid switching, lowering switching losses and improving energy efficiency in high-frequency circuits.
• Robust Package: The TO-220 FullPAK case offers excellent thermal handling and insulation, simplifying assembly and enhancing operational stability.

IPB95R130PFD7ATMA1 Advantages vs Typical Alternatives

Compared to standard MOSFETs, this device delivers lower conduction and switching losses, thanks to its advanced trench technology and low R_DS(on). Its high breakdown voltage and robust package contribute to superior reliability in harsh environments. These factors combine to improve overall system efficiency and longevity, especially where high-voltage operation and thermal management are critical.

Typical Applications

• Switch Mode Power Supplies (SMPS): The device’s high voltage capability and fast switching make it ideal for use in AC-DC and DC-DC converters, supporting efficient energy transfer and minimizing power loss in industrial and consumer electronics.
• Motor Drives: Suitable for use in variable frequency drives and industrial motor controllers, where reliable high-voltage switching is essential for precise speed and torque regulation.
• Photovoltaic Inverters: Its robust voltage rating and efficiency characteristics help optimize solar inverter performance, enabling safe power conversion and maximizing energy harvest.
• Uninterruptible Power Supplies (UPS): The low R_DS(on) and stable thermal performance ensure reliable switching in backup power systems, supporting consistent delivery during power outages.

IPB95R130PFD7ATMA1 Brand Info

This power MOSFET is part of a renowned series recognized for high reliability and efficiency in industrial power management. The product leverages advanced trench MOSFET technology to deliver enhanced breakdown voltage, lower on-resistance, and improved switching characteristics. Its TO-220 FullPAK package ensures safety and ease of integration, making the device a trusted option for engineers designing robust, energy-efficient solutions across industrial and renewable energy sectors.

FAQ

What is the primary advantage of the TO-220 FullPAK package in this device?

The TO-220 FullPAK package provides superior thermal performance and electrical insulation. This enables straightforward mounting without the need for additional insulation hardware, reducing assembly complexity and enhancing safety in high-voltage applications.

Can this MOSFET be used in high-frequency switching circuits?

Yes, its low gate charge and fast switching capability make it suitable for high-frequency applications such as switch mode power supplies and inverter circuits, where efficiency and quick response are essential.

What type of cooling or heatsinking is recommended for this device?

While the TO-220 FullPAK package offers good thermal handling, proper heatsinking is recommended in high-power or continuous operation environments to ensure the junction temperature remains within the specified range and to maximize device longevity.

Is this device suitable for both AC and DC switching applications?

Yes, the high breakdown voltage and robust switching performance make it suitable for both AC and DC power switching applications, including rectifiers, power supplies, and motor control systems.

What are the key considerations when integrating this MOSFET into a new design?

Engineers should account for the device??s voltage and current ratings, thermal management needs, and gate drive requirements. Ensuring appropriate layout and heatsinking will help achieve optimal efficiency and reliability in the final application.