IPB65R045C7ATMA2 Power MOSFET Transistor, TO-220 Package, Infineon

  • Designed for efficient power switching, this MOSFET helps reduce energy loss in electronic circuits.
  • Low on-resistance improves current flow, minimizing heat and enhancing system performance in demanding applications.
  • Compact package type enables space-saving layouts on densely populated printed circuit boards.
  • Ideal for use in switched-mode power supplies, where reliable operation and fast switching are essential.
  • Manufactured for consistent quality, supporting stable operation and long-term device reliability.
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IPB65R045C7ATMA2 Overview

The IPB65R045C7ATMA2 is an advanced N-channel MOSFET engineered for high-efficiency power switching applications. With a robust maximum drain-source voltage of 650V and a low on-state resistance, this device delivers excellent performance in demanding industrial and commercial environments. Its TO-220 package enables easy integration into a wide variety of power management systems, while its enhanced switching characteristics make it suitable for energy-sensitive designs. For reliable and consistent results in power electronics, the IPB65R045C7ATMA2 stands out as a dependable choice. Learn more at IC Manufacturer.

IPB65R045C7ATMA2 Technical Specifications

Parameter Value
Product Type N-channel MOSFET
Maximum Drain-Source Voltage (VDS) 650 V
Maximum Continuous Drain Current (ID) Not specified
On-State Resistance (RDS(on)) 45 m??
Gate Charge (Qg) Not specified
Package Type TO-220
Polarity N-channel
Technology CoolMOS? C7 Superjunction
Mounting Style Through Hole
Operating Temperature Range Not specified

IPB65R045C7ATMA2 Key Features

  • High Voltage Tolerance: With a maximum drain-source voltage of 650V, this MOSFET is well-suited for high-voltage applications, enhancing system flexibility.
  • Low RDS(on): The on-state resistance of just 45 m?? minimizes conduction losses, increasing overall energy efficiency in power conversion circuits.
  • Advanced Superjunction Technology: Utilizes CoolMOS? C7 technology to deliver improved switching performance and reduce switching losses, benefiting high-frequency operations.
  • Standard TO-220 Package: The widely used TO-220 form factor ensures compatibility and streamlined integration into existing hardware platforms.

IPB65R045C7ATMA2 Advantages vs Typical Alternatives

Compared to standard MOSFETs, the IPB65R045C7ATMA2 offers superior voltage handling and significantly lower on-resistance, resulting in reduced power losses and better thermal management. The implementation of advanced CoolMOS? C7 technology provides faster switching and higher efficiency, making it a preferred choice for engineers seeking reliable and energy-efficient solutions in demanding applications.

Typical Applications

  • Switch Mode Power Supplies (SMPS): Ideal for use in high-efficiency SMPS designs due to its low RDS(on) and high-voltage capability, enabling compact and reliable power conversion units for industrial, commercial, and consumer electronics.
  • Industrial Motor Drives: Provides efficient power switching for motor control applications, contributing to improved system reliability and energy savings.
  • Solar Inverters: Supports high-voltage switching and optimized efficiency in solar inverter designs, making it suitable for renewable energy systems.
  • Uninterruptible Power Supplies (UPS): Enhances the performance and longevity of UPS systems through robust voltage tolerance and efficient thermal management.

IPB65R045C7ATMA2 Brand Info

The IPB65R045C7ATMA2 belongs to the CoolMOS? C7 Superjunction MOSFET family, recognized for delivering enhanced efficiency and performance in high-voltage switching applications. This product combines advanced semiconductor technology with a proven TO-220 package, making it a trusted solution for designers focusing on power density and operational reliability. Its integration into demanding industrial and commercial systems underscores the brand??s commitment to quality and innovation in the power electronics market.

FAQ

What makes the IPB65R045C7ATMA2 suitable for high-voltage applications?

This device is rated for a maximum drain-source voltage of 650V, which equips it to handle high-voltage environments safely and efficiently. Its robust voltage rating ensures compatibility in a wide array of demanding power switching systems, minimizing the risk of breakdown and ensuring long-term reliability.

How does the low on-state resistance benefit power supply designs?

The low RDS(on) value of 45 m?? significantly reduces conduction losses during operation. This efficiency advantage is particularly important in power supply applications, where minimizing energy loss translates directly into improved system performance and reduced thermal stress.

What role does CoolMOS? C7 technology play in device performance?

CoolMOS? C7 Superjunction technology enables lower switching and conduction losses compared to conventional MOSFET structures. This results in higher switching speeds, better efficiency, and the ability to handle challenging thermal requirements, making it highly suitable for modern power electronics.

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Is the TO-220 package advantageous for thermal management?

The TO-220 package is widely regarded for its excellent thermal performance and ease of integration. Its design allows for effective heat dissipation, supporting higher power densities and contributing to the overall reliability of the end system in which the MOSFET is used.

What types of end products typically incorporate this MOSFET?

This device is often used in switch mode power supplies, motor drives, solar inverters, and uninterruptible power supplies. Its high-voltage and efficiency characteristics make it a preferred component for manufacturers seeking to optimize energy use and reliability in their electronic systems.

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