IPB65R041CFD7ATMA1 Overview
The IPB65R041CFD7ATMA1 is a high-performance N-channel MOSFET designed for demanding industrial and power supply applications. Leveraging advanced semiconductor process technologies, this device offers enhanced switching efficiency and robust thermal management, making it ideal for power conversion and energy management systems. With its optimized RDS(on) and high voltage capability, it supports high-frequency operation and ensures reliable performance even under heavy loads. Its compact TO-220 package simplifies integration into existing designs. For more information, visit IC Manufacturer.
IPB65R041CFD7ATMA1 Technical Specifications
| Parameter | Value |
|---|---|
| Transistor Type | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | 650 V |
| Continuous Drain Current (ID) | 43 A |
| RDS(on) (Max) | 0.041 ?? |
| Gate Charge (Qg) | 82 nC |
| Package | TO-220 |
| Mounting Type | Through Hole |
| Operating Temperature Range | -55??C to +150??C |
IPB65R041CFD7ATMA1 Key Features
- Low RDS(on) enables reduced conduction losses, improving overall system efficiency in high-power circuits.
- High voltage tolerance up to 650 V allows safe operation in industrial and energy management systems requiring robust isolation.
- TO-220 package provides excellent thermal performance, making it suitable for applications with stringent cooling requirements.
- Optimized gate charge supports rapid switching, contributing to decreased switching losses and efficient high-frequency operation.
IPB65R041CFD7ATMA1 Advantages vs Typical Alternatives
This MOSFET stands out for its combination of low on-resistance and high voltage capability, delivering superior efficiency and thermal reliability compared to conventional alternatives. The optimized gate charge and robust package design enable more compact and reliable power solutions, reducing energy loss and enhancing system longevity in industrial environments.
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Typical Applications
- Switch-mode power supplies: The device??s high voltage and low RDS(on) make it ideal for primary side switching, enhancing conversion efficiency and supporting higher power densities in compact power supply designs.
- Motor drives: Its current handling capabilities and rugged design are well-suited for industrial motor control applications, where reliable switching and thermal management are critical.
- Power factor correction circuits: The MOSFET??s fast switching and efficiency help meet regulatory standards for energy efficiency in lighting and industrial systems.
- Renewable energy inverters: The robust voltage rating and efficient conduction performance support solar and wind inverter designs, ensuring reliable energy conversion under diverse load conditions.
IPB65R041CFD7ATMA1 Brand Info
The IPB65R041CFD7ATMA1 is manufactured by a leading semiconductor supplier recognized for high-quality power devices. This product is engineered to meet the demanding needs of industrial and commercial power management, blending advanced MOSFET technology with reliable packaging. Its proven track record in the field underscores its suitability for mission-critical applications where performance and durability are paramount.
FAQ
What is the maximum voltage the IPB65R041CFD7ATMA1 can handle?
This device supports a maximum drain-source voltage of 650 V, ensuring safe operation in high-voltage environments like industrial power supplies or renewable energy inverters. This capability helps designers meet stringent isolation and safety standards.
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Which package type is used for this MOSFET, and why is it advantageous?
The device utilizes a TO-220 package, which offers excellent thermal performance and facilitates efficient heat dissipation. This packaging choice is favored in high-power applications for its robustness, ease of mounting, and reliable through-hole connections.
How does the low RDS(on) of this MOSFET benefit my design?
Low on-resistance directly reduces conduction losses, leading to greater energy efficiency. This feature is especially important in applications where high currents flow through the MOSFET, minimizing heat generation and improving overall system reliability.
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Is this MOSFET suitable for high-frequency switching applications?
Yes, its optimized gate charge enables rapid transitions between on and off states, minimizing switching losses. This makes it a solid choice for high-frequency power conversion circuits, such as those found in modern switch-mode power supplies and motor drives.
What are typical use cases for this device in industrial applications?
Common use cases include switch-mode power supplies, motor drives, power factor correction circuits, and renewable energy inverters. Its voltage rating, efficiency, and thermal robustness make it versatile for a range of demanding power management tasks.
