IPB60R280P7ATMA1 N-channel MOSFET, 600V 280m?, TO-220 Package

  • Enables efficient switching and power conversion in electronic circuits, supporting stable device operation.
  • Features a TO-220 package, which allows for easy mounting and effective heat dissipation during high-power use.
  • Compact package design helps minimize board space requirements, making it suitable for dense PCB layouts.
  • Ideal for use in power supplies or motor control systems, providing reliable management of high voltages and currents.
  • Manufactured to ensure consistent performance under demanding conditions, supporting long-term device reliability.
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IPB60R280P7ATMA1 Overview

The IPB60R280P7ATMA1 is an advanced power MOSFET designed for high-efficiency switching and fast switching times, making it a reliable choice for industrial and power supply applications. Featuring robust voltage and current ratings, it enables engineers to achieve optimal energy conversion and reduced losses in demanding environments. The device??s package and design support soldering stability and thermal management, which are vital for durable and efficient system integration. For more details and sourcing, visit IC Manufacturer.

IPB60R280P7ATMA1 Technical Specifications

ParameterValue
Transistor TypeN-Channel MOSFET
Maximum Drain-Source Voltage (VDS)600 V
Continuous Drain Current (ID)17.3 A
RDS(on) (Max)0.280 ??
Gate Charge (Qg)45 nC
Power Dissipation (PD)156 W
Package TypeTO-263-3
Operating Temperature Range-55??C to +150??C

IPB60R280P7ATMA1 Key Features

  • High voltage capability (600 V) allows for use in demanding power conversion and industrial switching circuits, providing ample design flexibility.
  • Low on-state resistance (0.280 ?? max) significantly reduces conduction losses, benefiting efficiency and thermal performance in high-current applications.
  • Fast switching characteristics, enabled by a low gate charge (45 nC), help minimize switching losses and support high-frequency operation.
  • Robust thermal performance and power dissipation (156 W) ensure stable operation in heat-intensive environments, promoting device longevity.

IPB60R280P7ATMA1 Advantages vs Typical Alternatives

This device delivers a strong balance of high voltage tolerance, low RDS(on), and efficient switching performance compared to typical alternatives. Its optimized gate charge and robust power handling reduce energy losses and support reliable operation, making it a superior choice for industrial systems where efficiency and thermal stability are essential.

Typical Applications

  • Switch-mode power supplies (SMPS): Ideal for use in high-efficiency SMPS designs, the device??s low on-resistance and fast switching improve conversion efficiency and reduce thermal stress on system components.
  • Motor drives: Suitable for controlling industrial or commercial motors, where robust voltage ratings and efficient switching are crucial for performance and reliability.
  • Uninterruptible power supplies (UPS): Delivers reliable power switching and handling in UPS systems, helping maintain stable operation during power fluctuations.
  • Lighting ballasts and LED drivers: Enables precise and efficient power management in lighting applications, supporting both traditional and energy-efficient LED systems.

IPB60R280P7ATMA1 Brand Info

This product is part of a reputable portfolio of high-performance MOSFETs, engineered for challenging industrial and commercial power applications. It is recognized for its reliability, efficiency, and robust design, making it a trusted solution for engineers seeking dependable switching components for critical systems. The TO-263-3 package further enhances its ease of integration and thermal management in compact layouts.

FAQ

What is the maximum voltage that the IPB60R280P7ATMA1 can withstand?

This MOSFET is rated for a maximum drain-source voltage of 600 V, making it suitable for high-voltage industrial and power conversion applications where safety margins and reliability are imperative.

How does its low RDS(on) benefit power supply designs?

The low on-state resistance of 0.280 ?? ensures minimal conduction losses during operation, which directly improves overall efficiency and reduces heat generation in power supply circuits.

What package does the IPB60R280P7ATMA1 use and why is it important?

It comes in a TO-263-3 package, which is valued for its compact size, good thermal conductivity, and ease of automated assembly on PCBs, supporting high-reliability industrial designs.

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Can this MOSFET be used in environments with high temperature fluctuations?

Yes, it supports an operating temperature range from -55??C to +150??C, making it well-suited for environments where temperature variations are common and robust performance is required.

What makes this device suitable for high-frequency applications?

Its fast switching capability, a result of a low gate charge of 45 nC, allows for efficient operation at higher frequencies, benefiting designs that require rapid switching and minimal energy loss.

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