IPB320N20N3GATMA1 N-Channel MOSFET, 200V 320A, TO-263 Package

  • Designed for efficient switching and power management in electronic circuits, helping reduce overall energy loss.
  • Offers a TO-263 package, which saves board space and supports streamlined assembly in compact designs.
  • Suitable for use in motor control or DC-DC converters, enabling stable operation in demanding environments.
  • IPB320N20N3GATMA1 ensures reliable performance under varying loads, supporting consistent system output.
  • Manufactured to meet industry-standard quality levels, minimizing risk of failure over extended use.
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IPB320N20N3GATMA1 Overview

The IPB320N20N3GATMA1 is a high-performance N-channel MOSFET optimized for industrial and power management applications. Designed for efficiency and reliability, this device delivers robust switching performance with low on-resistance and high current handling capability. Its advanced trench MOSFET technology ensures superior thermal characteristics and fast switching speeds, making it a preferred solution for demanding power electronics designs. For more details and sourcing, visit IC Manufacturer.

IPB320N20N3GATMA1 Technical Specifications

ParameterValue
Transistor TypeN-Channel MOSFET
Drain-Source Voltage (Vds)200 V
Continuous Drain Current (Id)320 A
RDS(on) (max)3.2 m??
Gate Charge (Qg)ÿ
PackageTO-263-3
PolarityN-Channel
TechnologyTrench MOSFET
Mounting TypeSurface Mount (SMT)

IPB320N20N3GATMA1 Key Features

  • High current handling up to 320 A enables use in demanding power supply and motor control circuits, providing robust performance.
  • Low on-resistance of 3.2 m?? reduces conduction losses, boosting overall system efficiency and minimizing heat generation.
  • Advanced trench MOSFET design ensures fast switching, improving response time in high-frequency applications.
  • The TO-263-3 package supports efficient thermal management and is compatible with automated surface-mount assembly.

IPB320N20N3GATMA1 Advantages vs Typical Alternatives

Compared to standard MOSFETs, this device offers notably lower RDS(on) for reduced power losses and higher current capacity, which directly enhances energy efficiency and reliability in industrial systems. The advanced trench technology and robust packaging further improve switching speed and thermal performance, making it a superior choice for high-demand applications.

Typical Applications

  • High-power motor drives: The device??s high current rating and low on-resistance make it ideal for use in industrial motor control and automation, delivering efficient energy transfer and reliable operation.
  • Switch-mode power supplies: Its fast switching capability supports efficient power conversion and helps minimize losses in SMPS topologies across various industrial sectors.
  • DC-DC converters: Suitable for medium to high voltage DC-DC conversion circuits, where robust switching and low conduction losses are critical for stable and efficient performance.
  • Uninterruptible power supplies (UPS): Ensures high reliability and energy efficiency within UPS inverters and battery management circuits, optimizing backup power solutions.

IPB320N20N3GATMA1 Brand Info

The IPB320N20N3GATMA1 is part of a reputable portfolio of discrete power semiconductors built for high reliability and efficiency. This product reflects the manufacturer??s commitment to delivering robust, high-current MOSFETs using advanced trench technology, supporting engineers in applications where performance, dependability, and thermal management are essential design criteria.

FAQ

What makes the IPB320N20N3GATMA1 suitable for industrial applications?

Its combination of a high continuous drain current, low on-resistance, and robust packaging makes this part well-suited for industrial environments, where reliability and efficiency are essential for motor drives, power supplies, and automation equipment.

Which package type does this MOSFET use, and what are the benefits?

This device is packaged in TO-263-3, a surface-mount format that provides excellent thermal performance, simplified PCB layout, and compatibility with automated assembly processes, making it ideal for high-power, high-frequency applications.

How does the low RDS(on) value benefit power electronics designs?

A low RDS(on) of 3.2 m?? minimizes conduction losses, enabling higher efficiency in power conversion and reducing heat generation, which in turn helps to simplify thermal management and improve overall system reliability.

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Can this device be used in high-frequency switching applications?

Yes, the advanced trench MOSFET structure supports fast switching speeds, making the component suitable for high-frequency applications like switch-mode power supplies and DC-DC converters where quick response and low losses are critical.

Is the IPB320N20N3GATMA1 compatible with automated PCB assembly?

Absolutely. The surface-mount TO-263-3 package is designed for compatibility with standard automated assembly processes, reducing manufacturing complexity and supporting high-volume production environments.

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