IPB17N25S3100ATMA1 Power MOSFET, 250V 17A, TO-220 Package

  • Provides efficient switching and control for power electronics, supporting stable operation in various circuits.
  • Features a TO-220 package, enabling straightforward mounting and improved thermal management in compact layouts.
  • Compact form factor saves valuable board space, allowing denser designs or smaller end products.
  • Ideal for use in motor drives or power supplies, where consistent performance and durability are required.
  • Rugged construction helps ensure dependable operation under demanding electrical and thermal conditions.
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IPB17N25S3100ATMA1 Overview

The IPB17N25S3100ATMA1 is a high-performance N-channel MOSFET engineered for superior power handling in industrial and automotive designs. This device is optimized for low on-resistance and robust voltage tolerance, making it suitable for switching applications that demand efficiency and reliability. Its advanced silicon technology and TO-220 package enable improved thermal management, supporting stable operation even under high load conditions. With a design tailored for demanding environments, this MOSFET brings enhanced system performance and long-term reliability. For more detailed information, visit IC Manufacturer.

IPB17N25S3100ATMA1 Technical Specifications

ParameterValue
Transistor TypeN-Channel MOSFET
Drain-Source Voltage (VDS)250 V
Continuous Drain Current (ID)17 A
RDS(on) (Max)310 m??
Gate Charge (QG)Not specified
PackageTO-220
Mounting TypeThrough Hole
PolarityN-Channel
TechnologyMOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor)
RoHS ComplianceYes

IPB17N25S3100ATMA1 Key Features

  • High Voltage Tolerance: The device supports drain-source voltages up to 250 V, allowing safe operation in high-voltage circuits without risk of breakdown.
  • Low RDS(on): With a maximum on-resistance of 310 m??, it minimizes conduction losses, resulting in greater energy efficiency for large load switching.
  • Robust Current Handling: Capable of sustaining up to 17 A continuous drain current, this MOSFET is suitable for demanding power switching and conversion tasks.
  • Reliable TO-220 Package: Provides excellent thermal characteristics and is widely recognized in power electronics for ease of mounting and heat dissipation.
  • RoHS Compliance: Ensures the device meets environmental and regulatory standards for hazardous substances, supporting sustainable design.

IPB17N25S3100ATMA1 Advantages vs Typical Alternatives

This N-channel MOSFET offers a compelling combination of elevated voltage tolerance and low on-resistance, delivering efficient power switching with reduced heat build-up. Its robust TO-220 package enhances reliability and simplifies integration into existing designs. Compared to many standard MOSFETs, it enables higher current handling and greater system efficiency, ensuring stable performance in industrial and automotive environments. These features make it a preferred choice for engineers prioritizing reliability and power density.

Typical Applications

  • Power Supply Switching: Frequently used in high-voltage DC-DC converters and power supply units, where fast and efficient switching is critical for stable output and energy savings.
  • Motor Control Circuits: Suitable for controlling motors in industrial and automotive systems, offering reliable switching capability for inductive load management.
  • High-Voltage Inverters: Ideal for inverter designs in renewable energy, uninterruptible power supplies, and grid applications where robust voltage and current ratings are required.
  • General Purpose Switching: Adaptable for use in a variety of high-power switching scenarios, including relay replacements and load management in automation systems.

IPB17N25S3100ATMA1 Brand Info

The IPB17N25S3100ATMA1 is developed by a recognized leader in semiconductor technology, known for delivering reliable discrete MOSFET solutions. This specific product is engineered to address the needs of high-performance power electronics, leveraging advanced manufacturing processes to achieve excellent thermal and electrical characteristics. Its design reflects a commitment to quality and reliability, making it a trusted component in industrial, automotive, and energy system designs.

FAQ

What is the maximum voltage rating for this N-channel MOSFET?

The device is rated for a maximum drain-source voltage of 250 V, making it suitable for use in circuits requiring high-voltage switching and providing a significant safety margin in demanding electronics.

What package type does this MOSFET use and why is it important?

It is provided in a TO-220 package, which is valued for its excellent thermal management and ease of mounting in through-hole applications. This helps maintain stable operation even with higher power levels and simplifies integration into existing designs.

Is the IPB17N25S3100ATMA1 compliant with environmental regulations?

Yes, the product is RoHS compliant, which means it meets restrictions on hazardous substances, supporting eco-friendly and globally accepted electronics manufacturing standards.

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Can this MOSFET handle significant continuous current?

It is designed to support a continuous drain current of up to 17 A, making it well-suited for high-current switching tasks in power supplies, motor controllers, and similar applications.

What are the main application areas for this device?

Typical uses include power supply switching, motor control, high-voltage inverters, and general-purpose switching in industrial, automotive, and energy management systems, where high efficiency and reliability are required.

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