IPB110P06LMATMA1 Overview
The IPB110P06LMATMA1 is a high-performance P-channel MOSFET specifically engineered for low-voltage, high-current switching applications. With its advanced trench technology, this device offers low on-state resistance and robust switching characteristics, making it ideal for demanding industrial and automotive environments. Its compact TO-263 (D2PAK) package supports efficient heat dissipation and board space optimization. Designed to provide reliable and efficient power management, this MOSFET supports design flexibility for engineers across a wide range of applications. For more detailed product sourcing and supply chain support, visit IC Manufacturer.
IPB110P06LMATMA1 Technical Specifications
| Parameter | Value |
|---|---|
| Transistor Type | P-Channel MOSFET |
| Drain-to-Source Voltage (VDS) | -60 V |
| Continuous Drain Current (ID) | -110 A |
| RDS(on) (Maximum) | 6.3 m?? @ VGS = -10 V |
| Gate-to-Source Voltage (VGS) | ?I20 V |
| Package | TO-263 (D2PAK) |
| Mounting Type | Surface Mount |
| Operating Temperature Range | -55??C to 175??C |
IPB110P06LMATMA1 Key Features
- Low on-resistance (RDS(on)) delivers minimal conduction losses, supporting higher efficiency in power switching circuits.
- High continuous drain current rating enables robust handling of demanding loads, making it suitable for motor drives and power management.
- Wide gate-to-source voltage range ensures compatibility with various logic levels and drive circuits for flexible design integration.
- Surface-mount TO-263 (D2PAK) package allows for efficient thermal management and compact PCB layouts, streamlining assembly processes.
- Extended operating temperature range provides reliable performance in challenging industrial and automotive environments.
IPB110P06LMATMA1 Advantages vs Typical Alternatives
This power MOSFET stands out due to its combination of low on-state resistance and high continuous current capability. Compared to typical alternatives, it reduces power losses and supports higher efficiency, especially in applications requiring frequent switching. Its robust package and wide temperature tolerance further enhance reliability, making it a preferred choice for demanding industrial and automotive systems. These attributes translate to improved energy efficiency, thermal management, and long-term operational stability.
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Typical Applications
- High-current DC-DC converters: The device??s low RDS(on) and high current handling make it ideal for power conversion circuits in industrial machinery and telecom systems, helping reduce conduction losses and improve thermal performance.
- Automotive power management: Its ruggedness and wide temperature range suit battery management, electric power steering, and load switching in automotive environments where reliability is critical.
- Motor control circuits: P-channel configuration and robust current rating enable efficient switching and braking in electric motor drives, enhancing system responsiveness and safety.
- Uninterruptible power supplies (UPS): The MOSFET??s characteristics support efficient switching and reliability in backup power systems, ensuring stable operation during power transitions.
IPB110P06LMATMA1 Brand Info
The IPB110P06LMATMA1 is a product developed by a leading semiconductor manufacturer, known for delivering high-quality discrete power devices. This particular MOSFET is designed to meet the stringent demands of industrial and automotive applications, providing a balance of performance, efficiency, and reliability. Its advanced trench MOSFET technology and robust packaging underline the brand??s commitment to innovation in power management solutions, supporting engineers in creating energy-efficient and durable electronic systems.
FAQ
What is the maximum drain current supported by this P-channel MOSFET?
The device is rated for a continuous drain current of up to -110 A, making it suitable for applications where high current handling is essential, such as motor drives and power management modules.
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Which package type does this MOSFET use, and what are its mounting advantages?
It is supplied in a TO-263 (D2PAK) surface-mount package. This package format offers efficient thermal dissipation and is compatible with automated assembly, simplifying the design and manufacturing of compact, high-power circuits.
Can this device be used in automotive environments?
Yes, the wide operating temperature range from -55??C to 175??C and its robust current handling make this MOSFET suitable for automotive power management, battery switching, and load control applications, ensuring reliable operation in harsh conditions.
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How does the low RDS(on) value benefit system designers?
The low on-state resistance (6.3 m?? at VGS = -10 V) reduces conduction losses during operation, enhancing energy efficiency and minimizing heat generation inside power electronic systems.
Is this MOSFET compatible with low-voltage drive circuits?
With a gate-to-source voltage tolerance of ?I20 V, the device offers design flexibility and compatibility with a wide range of logic-level and standard drive circuits, supporting diverse application requirements.
