IPB108N15N3GATMA1 N-Channel MOSFET, 150V 108A, TO-263 Package

  • Enables efficient switching and power control in electronic circuits, supporting improved energy management.
  • Optimized for low RDS(on), reducing conduction losses and helping to increase overall circuit efficiency.
  • Compact package design allows for board-space savings in dense layouts or space-constrained applications.
  • Ideal for use in power supplies or motor control systems, providing stable operation under demanding conditions.
  • Manufactured to support consistent performance and operational longevity in a range of environments.
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IPB108N15N3GATMA1 Overview

The IPB108N15N3GATMA1 is a high-performance N-channel MOSFET designed for demanding industrial and power management applications. Engineered for efficient switching and robust reliability, this component offers low RDS(on) and high current handling capabilities, making it ideal for advanced power conversion systems. Its TO-220 package enhances heat dissipation, supporting continuous operation in environments where thermal management is critical. The device is suitable for engineers seeking a balance of performance, efficiency, and durability. For more details, visit IC Manufacturer.

IPB108N15N3GATMA1 Technical Specifications

ParameterValue
Transistor TypeN-Channel MOSFET
Drain-Source Voltage (VDS)150 V
Continuous Drain Current (ID)104 A
RDS(on) (Max)10.8 m??
Gate Charge (Qg)166 nC
Power Dissipation (PD)300 W
Package / CaseTO-220-3
Operating Temperature Range-55??C to +175??C
PolarityN-Channel

IPB108N15N3GATMA1 Key Features

  • High drain current capacity supports applications requiring efficient power switching and robust load control.
  • Low RDS(on) minimizes conduction losses, leading to increased energy efficiency in demanding power circuits.
  • Wide operating temperature range ensures reliable operation in harsh industrial settings and high-temperature environments.
  • TO-220-3 package offers superior thermal management and facilitates straightforward integration into standard PCB layouts.

IPB108N15N3GATMA1 Advantages vs Typical Alternatives

This device stands out thanks to its combination of low on-resistance and high current capability, delivering superior efficiency and reduced power losses relative to many standard MOSFETs. Its enhanced thermal performance and broad operating temperature further support reliable operation in critical industrial and power conversion roles, where reliability and efficiency are paramount.

Typical Applications

  • Industrial motor drives: The high drain current and low RDS(on) enable efficient operation in motor control applications, reducing energy consumption and supporting robust torque delivery.
  • Switching power supplies: Ideal for use as a primary switch in high-efficiency power supply designs due to its fast switching and low conduction losses.
  • Uninterruptible power supplies (UPS): Ensures reliable high-current switching for battery management and backup systems in critical infrastructure.
  • DC-DC converters: Enhances conversion efficiency and thermal management in intermediate bus architecture and point-of-load converters.

IPB108N15N3GATMA1 Brand Info

The IPB108N15N3GATMA1 is produced by a leading manufacturer specializing in advanced semiconductor solutions for industrial and power management markets. This device reflects the brand??s commitment to delivering high-performance, reliable, and energy-efficient components tailored for demanding applications. Its robust design and optimized package demonstrate a focus on quality and long-term durability, making it a trusted choice for engineers and sourcing professionals worldwide.

FAQ

What makes the IPB108N15N3GATMA1 suitable for industrial power applications?

The combination of high continuous drain current, low RDS(on), and a wide operating temperature range allows this component to deliver efficient and reliable performance in tough industrial environments where thermal and electrical stress are common.

How does the TO-220-3 package benefit thermal management?

The TO-220-3 package provides an efficient thermal path, enabling improved heat dissipation. This allows the device to handle higher power levels without excessive temperature rise, supporting reliable operation in high-power designs.

Can the IPB108N15N3GATMA1 be used in automotive applications?

While it features robust electrical specifications, its suitability for automotive use depends on further compliance and qualification to automotive standards. Always check system requirements and relevant certifications before deployment.

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What is the maximum voltage the device can handle?

The maximum drain-source voltage is 150 V. Exceeding this value may damage the device or compromise long-term reliability, so ensure that circuit designs maintain safe voltage margins during operation.

Is the IPB108N15N3GATMA1 appropriate for switching high-frequency loads?

With a gate charge of 166 nC and fast switching characteristics, the device is well-suited for high-frequency switching applications, provided that gate drive circuitry is designed to match the device??s characteristics for optimal performance.

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