IPB107N20N3GATMA1 Power MOSFET Transistor, TO-220 Package, N-Channel 200V

  • Designed for switching and amplification tasks, this device efficiently manages power in electronic circuits.
  • Features a TO-220 package, which allows for straightforward mounting and effective heat dissipation.
  • The compact, through-hole package saves board space and supports robust mechanical connections.
  • Commonly used in power supplies and motor control, providing stable performance in demanding environments.
  • Manufactured for consistent quality, aiding long-term operation and minimizing risk of early device failure.
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IPB107N20N3GATMA1 Overview

The IPB107N20N3GATMA1 is a high-performance N-channel MOSFET optimized for demanding industrial and automotive applications. Featuring a robust TO-263 package and a voltage rating well-suited for power switching tasks, this device delivers efficient switching, low conduction losses, and enhanced thermal management. Its advanced silicon technology ensures high reliability and operational stability across a broad range of environments. Designed to meet the needs of engineers and sourcing professionals, this MOSFET is ideal for systems where efficiency and durability are critical. For more details, visit IC Manufacturer.

IPB107N20N3GATMA1 Technical Specifications

AttributeValue
Product CategoryMOSFETs – Single
Transistor PolarityN-Channel
Drain-Source Voltage (Vds)200 V
Continuous Drain Current (Id)100 A
Rds On (Max)0.0107 ??
Package/CaseTO-263-3
Mounting StyleSMD/SMT
TechnologyPower MOSFET
ConfigurationSingle
Unit Weight2.000 g

IPB107N20N3GATMA1 Key Features

  • High drain-source voltage of 200 V enables reliable operation in high-voltage environments, ensuring robust performance for power switching applications.
  • Low Rds(on) value of 0.0107 ?? minimizes conduction losses, improving overall system efficiency and reducing heat generation during operation.
  • Supports a continuous drain current of up to 100 A, making it suitable for high current loads and applications requiring substantial power handling.
  • TO-263-3 surface-mount package offers excellent thermal characteristics and compact integration into PCB layouts, simplifying thermal management in dense designs.

IPB107N20N3GATMA1 Advantages vs Typical Alternatives

This device stands out due to its combination of high voltage and current ratings, together with a low Rds(on), which translates to lower power dissipation and improved efficiency over standard MOSFETs. The robust TO-263 package enhances reliability and thermal performance, making it a strong choice for demanding systems where power density and longevity are essential.

Typical Applications

  • Switch mode power supplies (SMPS) benefit from the low conduction losses and high voltage handling, maximizing energy conversion efficiency in industrial and telecom power units.
  • Motor drive circuits in automation or automotive systems leverage its high current capability for reliable and efficient control of motors under varying load conditions.
  • Battery management systems utilize this MOSFET for safe, low-loss switching between charge and discharge cycles in energy storage and electric vehicle platforms.
  • General-purpose power switching in high-reliability environments, such as industrial control or renewable energy installations, where ruggedness and efficiency are vital.

IPB107N20N3GATMA1 Brand Info

The IPB107N20N3GATMA1 is a specialized power MOSFET designed and produced with a focus on high reliability, efficiency, and ease of integration. This device reflects the manufacturer??s commitment to delivering components that meet stringent industrial and automotive standards, ensuring dependable operation in critical applications. With its advanced silicon technology and TO-263 package, this MOSFET aligns with market needs for robust, high-performance switching solutions.

FAQ

What package type is used and why is it beneficial for power applications?

This MOSFET is offered in a TO-263-3 surface-mount package, which provides excellent thermal dissipation and allows for efficient heat management. The package is suitable for high-power designs that require reliable operation and compact PCB layouts.

How does the low Rds(on) value impact efficiency in switching applications?

A low Rds(on) of 0.0107 ?? means reduced conduction losses during operation. This translates to higher overall efficiency, less heat generation, and improved energy savings, which are critical in power conversion and high-current switching circuits.

What voltage and current ratings are supported, and why do they matter?

The device supports a drain-source voltage of 200 V and a continuous drain current of 100 A. These ratings enable safe and reliable operation in high-voltage, high-current environments such as industrial power supplies and automotive systems.

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In which types of applications is this MOSFET most commonly used?

It is well-suited for use in switch mode power supplies, motor drives, battery management systems, and general-purpose power switching. The combination of high current, voltage rating, and efficiency makes it versatile for both industrial and automotive sectors.

What are the mounting options and associated benefits?

The SMD/SMT mounting style allows for automated assembly and compact board design. This not only improves production efficiency but also reduces overall system size and enhances thermal management through optimized PCB layouts.

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