IPB073N15N5ATMA1 Overview
The IPB073N15N5ATMA1 is a high-performance N-channel MOSFET designed for demanding power management and switching applications. With its low on-resistance and robust voltage handling, this device is optimized for efficiency and reliability in industrial and automotive environments. Its advanced trench technology ensures minimal conduction and switching losses, making it suitable for high-frequency circuits. The device is housed in a TO-220 package, providing excellent thermal performance and ease of integration into existing designs. For more details, visit the IC Manufacturer.
IPB073N15N5ATMA1 Technical Specifications
| Parameter | Value |
|---|---|
| Device Type | N-channel MOSFET |
| Drain-Source Voltage (VDS) | 150 V |
| Continuous Drain Current (ID) | 100 A |
| RDS(on) (max) @ VGS = 10V | 7.3 m?? |
| Gate Charge (Qg) | 130 nC |
| Operating Temperature Range | -55??C to +175??C |
| Package Type | TO-220 |
| Technology | Trench MOSFET |
IPB073N15N5ATMA1 Key Features
- Low RDS(on) of 7.3 m?? enables highly efficient power conversion, reducing heat generation and energy losses in high-current circuits.
- High drain-source voltage rating of 150 V allows safe operation in demanding industrial and automotive power systems.
- TO-220 package offers excellent thermal conductivity, simplifying the integration into designs where heat dissipation is critical.
- Supports high-speed switching thanks to optimized gate charge, improving performance in switching power supplies and motor drives.
IPB073N15N5ATMA1 Advantages vs Typical Alternatives
This MOSFET stands out with its exceptionally low on-resistance and high current capability, providing reduced conduction losses and improved thermal management. Its advanced trench technology ensures efficient switching, making it more reliable and robust compared to conventional planar MOSFETs in similar voltage and current classes. The TO-220 package further enhances heat dissipation and mounting flexibility.
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Typical Applications
- Switching power supplies: The low RDS(on) and high current rating make it ideal for use in high-efficiency DC-DC converters, minimizing energy losses and thermal stress during continuous operation.
- Motor control: Suitable for automotive and industrial motor drivers, where robust voltage handling and efficient switching are necessary for consistent performance.
- Battery management systems: Used for safe charging and discharging circuits, offering low losses and stable operation across a wide temperature range.
- General-purpose power switching: Flexible enough for relay replacement, load switching, and protection circuits in a variety of industrial control systems.
IPB073N15N5ATMA1 Brand Info
The IPB073N15N5ATMA1 is manufactured by a leading provider of semiconductor solutions, known for delivering high-performance power MOSFETs tailored for industrial and automotive applications. This device leverages advanced trench technology, ensuring a balance of efficiency, reliability, and ruggedness. Its robust design and industry-standard TO-220 package make it a preferred choice among engineers seeking dependable performance in critical power management roles.
FAQ
What are the main benefits of using the IPB073N15N5ATMA1 in power supply designs?
This device??s low on-resistance and high current capability help minimize power loss, improve overall efficiency, and reduce thermal management requirements, making it an excellent fit for high-frequency switching power supplies and converters.
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Is the IPB073N15N5ATMA1 suitable for automotive applications?
Yes, its high voltage rating and rugged design make it suitable for demanding automotive power management tasks, including motor drives and battery management systems, where reliability and consistent performance are essential.
What package is the IPB073N15N5ATMA1 available in, and why is this advantageous?
The device is supplied in a TO-220 package, which offers superior thermal performance and is widely compatible with through-hole assembly processes, facilitating easy integration and effective heat dissipation.
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How does the trench technology improve the performance of this MOSFET?
Advanced trench technology reduces the on-state resistance and enhances switching efficiency. This results in lower power losses, improved energy savings, and better reliability under continuous high-current operation.
What types of applications benefit most from the IPB073N15N5ATMA1?
Applications that demand efficient power switching, robust voltage and current handling??such as industrial power supplies, automotive motor controls, and battery management systems??are ideal for this MOSFET due to its electrical characteristics and reliability.
