IPB065N15N3GATMA1 Overview
The IPB065N15N3GATMA1 is a high-performance N-channel MOSFET designed for demanding power management and switching applications. Engineered for efficiency and reliability, this device offers low on-state resistance and robust voltage handling, making it a strong choice for industrial and automotive environments. With its advanced trench technology and optimized packaging, the IPB065N15N3GATMA1 streamlines thermal management and supports high-current loads. For those seeking precision and consistent performance, this MOSFET delivers a balanced mix of speed, efficiency, and durability. Source: IC Manufacturer
IPB065N15N3GATMA1 Technical Specifications
| Parameter | Value |
|---|---|
| Transistor Type | N-Channel MOSFET |
| Drain-to-Source Voltage (VDS) | 150V |
| Continuous Drain Current | 120A |
| RDS(on) (Max) | 6.5 m?? |
| Gate Charge (Qg) | 208 nC |
| Power Dissipation | 340W |
| Package / Case | TO-263-3 (D2PAK) |
| Operating Temperature Range | -55??C to +175??C |
| Technology | Trench MOSFET |
IPB065N15N3GATMA1 Key Features
- Low RDS(on) of 6.5 m?? ensures minimal conduction losses, significantly improving system efficiency in power switching designs.
- High drain current capability up to 120A supports heavy load switching, ideal for industrial motors and power supply circuits.
- Advanced trench technology enhances switching performance and reduces gate charge, allowing for faster, energy-efficient operation.
- Robust 150V voltage rating offers substantial headroom for high-voltage designs, increasing device reliability and system safety.
- Wide operating temperature range (-55??C to +175??C) makes it suitable for harsh environments and automotive-grade requirements.
- Compact TO-263-3 (D2PAK) package optimizes board space while maintaining excellent thermal characteristics.
IPB065N15N3GATMA1 Advantages vs Typical Alternatives
This device stands out by combining a low on-state resistance with a high current rating, ensuring reduced power loss and superior energy efficiency. Its advanced trench structure also results in lower gate charge, supporting faster switching and lower drive power. The wide safe operating area and robust voltage handling capability further enhance reliability when compared to standard MOSFETs, making it a compelling choice for demanding industrial and automotive applications.
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Typical Applications
- Motor control and drive systems: The high current capacity and low RDS(on) make it well-suited for efficient, reliable operation in industrial and automotive motor drivers, where power loss and thermal management are critical.
- DC-DC converters: Enables efficient voltage regulation and high-speed switching in power supply modules, especially in telecom and industrial equipment.
- Battery management systems: Supports high-current battery charging and protection circuits, ensuring safety and energy efficiency in electric vehicles and backup power units.
- Switching power supplies: Delivers reliable performance in switched-mode power supplies, benefiting demanding loads and minimizing system losses.
IPB065N15N3GATMA1 Brand Info
The IPB065N15N3GATMA1 is manufactured using advanced trench MOSFET technology, ensuring a balance between performance and ruggedness. Its design addresses the needs of engineers tasked with building robust, energy-efficient systems for industrial, automotive, and high-power applications. This product reflects a commitment to innovation in power semiconductor solutions, offering proven reliability and streamlined integration for OEMs and system designers alike.
FAQ
What makes the IPB065N15N3GATMA1 suitable for high-current applications?
It supports a continuous drain current of up to 120A, which is essential for systems requiring efficient switching of heavy loads. The low RDS(on) minimizes conduction losses, ensuring high energy efficiency and reliable operation even under demanding conditions.
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Can the IPB065N15N3GATMA1 be used in automotive environments?
Yes, its wide operating temperature range from -55??C to +175??C and robust voltage handling make it a reliable choice for automotive electronics where high durability and consistent performance are required.
What type of package does this MOSFET use, and why does it matter?
It comes in a TO-263-3 (D2PAK) surface-mount package, which provides excellent thermal performance and efficient heat dissipation. This package also supports automated assembly and saves board space in compact designs.
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How does the trench technology benefit the user?
Trench MOSFET technology reduces both on-state resistance and gate charge, which translates to faster switching, lower drive power, and improved overall efficiency in high-speed and high-frequency applications.
Is the IPB065N15N3GATMA1 suitable for use in power supply circuits?
Absolutely. Its high voltage and current ratings, along with fast switching capability, make it ideal for DC-DC converters and switched-mode power supplies, where efficiency and reliability are critical for system performance.
