IPB033N10N5LFATMA1 N-Channel MOSFET, 100V 100A, TO-220 Package

  • Serves as a power MOSFET, enabling efficient switching and power management in electronic circuits.
  • Low on-resistance helps reduce power loss, supporting cooler operation in high-current applications.
  • Features a compact package design, which allows for increased board space savings in dense layouts.
  • Ideal for use in motor control circuits, where fast switching and low heat improve overall system performance.
  • Manufactured to support consistent operation over time, helping ensure long-term reliability in end products.
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IPB033N10N5LFATMA1 Overview

The IPB033N10N5LFATMA1 is a high-performance N-channel MOSFET designed for demanding industrial power switching and motor drive applications. With a low on-state resistance and robust voltage handling, it enables efficient operation in power management circuits. This semiconductor device is engineered to deliver optimal switching performance, making it highly suitable for applications requiring fast response, low conduction losses, and reliability under challenging conditions. Its advanced packaging and electrical characteristics support integration into modern designs where energy efficiency and thermal performance are critical. For more details, visit the IC Manufacturer website.

IPB033N10N5LFATMA1 Technical Specifications

ParameterValue
Transistor TypeN-Channel MOSFET
Drain-Source Voltage (VDS)100 V
Continuous Drain Current (ID)120 A
RDS(on) (Max)3.3 m?? @ VGS=10V
Gate Charge (Qg)148 nC @ VGS=10V
Package / CaseTO-263-3 (D2PAK)
Operating Temperature Range-55??C to +175??C
Mounting TypeSurface Mount
PolarityN-Channel

IPB033N10N5LFATMA1 Key Features

  • Ultra-low RDS(on) minimizes conduction losses, enhancing system efficiency for high-current switching applications.
  • High drain current capability supports robust operation in motor drives and power supplies, ensuring reliable load management.
  • TO-263-3 package offers excellent thermal performance, allowing for compact designs with effective heat dissipation.
  • Wide operating temperature range enables use in harsh industrial environments without sacrificing reliability.

IPB033N10N5LFATMA1 Advantages vs Typical Alternatives

This power MOSFET stands out due to its significantly low on-resistance and high current handling, reducing power losses and improving overall efficiency. Compared to standard alternatives, its robust package and wide temperature tolerance provide enhanced reliability and flexibility in demanding switching or drive applications. These related function words??efficiency, reliability, and thermal management??are at the core of its competitive edge.

Typical Applications

  • Switching power supplies: With its low RDS(on) and high current rating, this device is ideal for high-efficiency DC-DC converters and AC-DC switching supplies in industrial automation systems.
  • Motor control units: The robust current capability supports industrial motor drives, enabling precise speed and torque management in equipment and machinery.
  • Battery management systems: Useful for high-current battery protection and switching in energy storage or backup power applications.
  • Solar inverters: Suitable for high-frequency switching and efficient energy conversion in renewable energy installations.

IPB033N10N5LFATMA1 Brand Info

This MOSFET is developed by a leading semiconductor manufacturer, renowned for delivering advanced discrete power solutions. The device combines innovation in MOSFET technology with a focus on reliability, making it a popular choice for engineers designing energy-efficient and high-performance systems. Its proven track record in the market highlights a commitment to quality and continuous improvement in industrial and power electronics.

FAQ

What distinguishes the IPB033N10N5LFATMA1 in industrial power switching applications?

This MOSFET offers a unique blend of high current capability and extremely low on-resistance, which translates to lower conduction losses and higher efficiency in power switching circuits compared to many standard devices.

Is the IPB033N10N5LFATMA1 suitable for use in high-temperature environments?

Yes, with an operating temperature range from -55??C to +175??C, this device is engineered to perform reliably in harsh industrial and automotive environments where thermal stress is a concern.

What type of mounting does this MOSFET support?

The device features a surface mount design in a TO-263-3 (D2PAK) package, making it compatible with automated assembly processes and suitable for high-density PCB layouts.

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Can the IPB033N10N5LFATMA1 be used in motor drive circuits?

Absolutely. Its high drain current rating and robust construction make it ideal for industrial motor control applications, ensuring both performance and longevity under repeated switching cycles.

How does the low gate charge benefit switching performance?

The low total gate charge allows for faster switching transitions, which reduces switching losses and enables higher frequency operation??essential for efficient power conversion and management in modern electronic systems.

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