IPB029N15NM6ATMA1 Overview
The IPB029N15NM6ATMA1 is a high-performance N-channel MOSFET engineered for demanding industrial and power management applications. Designed to deliver low on-resistance and robust current handling, it is well-suited to high-efficiency switching, load control, and power conversion tasks. Its advanced semiconductor structure ensures efficient thermal performance and reliability, making it a trusted choice for engineers seeking optimized switching behavior and minimal conduction losses. For detailed supply and manufacturer information, visit IC Manufacturer.
IPB029N15NM6ATMA1 Technical Specifications
| Transistor Type | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | 150 V |
| Maximum Continuous Drain Current (ID) | 100 A |
| RDS(on) (Max) | 2.9 m?? @ 10V |
| Gate Charge (Qg) | 185 nC |
| Package / Case | TO-263-3 (D2PAK) |
| Operating Temperature Range | -55??C to 175??C |
| Input Capacitance (Ciss) | 8700 pF |
| Polarity | N-Channel |
IPB029N15NM6ATMA1 Key Features
- Ultra-low RDS(on) minimizes conduction losses, improving overall system efficiency in high-current circuits.
- High drain current capability supports demanding loads, enabling robust performance in power management and motor control.
- Enhanced thermal performance ensures reliable operation under heavy switching and continuous load conditions.
- Standard TO-263-3 (D2PAK) package facilitates easy PCB mounting and efficient heat dissipation.
IPB029N15NM6ATMA1 Advantages vs Typical Alternatives
Compared to typical alternatives, this N-channel MOSFET offers significantly lower RDS(on), supporting higher efficiency and reduced heat generation in switching applications. Its high current rating and robust thermal handling deliver superior reliability and performance in industrial and automotive environments, making it a preferred solution for engineers prioritizing efficiency and durability.
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Typical Applications
- Power supply switching: Ideal for use in high-efficiency DC-DC converters, enabling minimal energy loss during rapid switching cycles and supporting compact, reliable designs.
- Motor drive circuits: Suitable for both industrial and automotive motor control, where dependable high-current switching and low conduction loss are essential.
- Load switching and protection: Provides robust performance in relay replacement and load management roles, ensuring safe and efficient circuit operation.
- Battery management systems: Supports precise current control and low-loss switching in battery-powered equipment and energy storage solutions.
IPB029N15NM6ATMA1 Brand Info
This device is manufactured by a leading semiconductor brand recognized for its expertise in high-quality power MOSFETs. The IPB029N15NM6ATMA1 exemplifies the brand??s commitment to innovation, offering a balance of low on-resistance, high current capacity, and reliability. It is engineered to meet the needs of advanced industrial, automotive, and power management applications, providing customers with a proven, high-performance solution for critical circuits.
FAQ
What is the maximum drain-source voltage supported by this MOSFET?
The device is rated for a maximum drain-source voltage of 150 V, making it suitable for a broad range of industrial and power conversion applications that require high-voltage handling capability.
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What advantages does the low RDS(on) provide in practical applications?
Low RDS(on) results in reduced conduction losses during operation, which enhances overall system efficiency and helps minimize heat generation, allowing for more compact and energy-efficient designs.
In which package is this N-channel MOSFET supplied?
The device is supplied in a TO-263-3 (D2PAK) surface-mount package, which is widely used for power semiconductors due to its excellent thermal performance and ease of integration onto PCBs.
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Can this component be used in automotive or motor control applications?
Yes, its high current capability and robust thermal characteristics make it well-suited for automotive systems and motor control circuits, where reliability and efficient switching are critical requirements.
What is the operating temperature range for this part?
The operating temperature range for this MOSFET spans from -55??C to 175??C, ensuring reliable operation in both high-temperature industrial environments and applications exposed to wide temperature fluctuations.
