IPB025N10N3GATMA1 Overview
The IPB025N10N3GATMA1 is a high-performance N-channel MOSFET designed for demanding industrial and automotive applications. With its low on-resistance and robust voltage handling, it enables efficient switching and power management in a variety of systems. The device??s advanced trench technology delivers minimal conduction losses, making it an optimal choice for applications requiring high efficiency and thermal reliability. Backed by automotive-grade qualification, this MOSFET is suitable for use in harsh environments where consistent performance is critical. For more product details, visit IC Manufacturer.
IPB025N10N3GATMA1 Technical Specifications
| Parameter | Value |
|---|---|
| Transistor Type | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | 100 V |
| Continuous Drain Current (ID) | 120 A |
| RDS(on) (Max) | 2.5 m?? |
| Gate Threshold Voltage (VGS(th)) | 2.0 V ÿ 4.0 V |
| Total Gate Charge (Qg) | 191 nC |
| Package / Case | TO-263-3 |
| Operating Temperature Range | -55??C to +175??C |
| Automotive Qualification | AEQ-Q101 |
IPB025N10N3GATMA1 Key Features
- Ultra-low RDS(on) of 2.5 m?? ensures minimal conduction losses, directly enhancing system efficiency and reducing heat generation in power conversion circuits.
- High current capability up to 120 A supports robust switching and enables reliable operation in demanding load conditions, which is valuable for automotive and industrial systems.
- Wide operating temperature range from -55??C to +175??C allows deployment in harsh environments, increasing design flexibility for engineers targeting extended reliability.
- Automotive-grade qualification (AEQ-Q101) guarantees strict reliability standards, making this MOSFET suitable for safety-critical and long-life applications.
IPB025N10N3GATMA1 Advantages vs Typical Alternatives
The IPB025N10N3GATMA1 stands out due to its exceptionally low on-resistance, which translates to higher efficiency and lower thermal losses compared to typical MOSFETs in the same voltage class. Its high current rating and automotive qualification provide added assurance of reliability and robustness for mission-critical power management applications, allowing designers to achieve more compact and efficient solutions with confidence.
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Typical Applications
- Automotive Powertrain and ECU Modules: The device??s low RDS(on) and high current capability make it ideal for engine control units, power distribution, and electric drive systems, ensuring dependable operation and thermal efficiency.
- DC-DC Converters and Power Supplies: Utilized in high-efficiency switching regulators where switching losses and thermal management are key concerns.
- Motor Drive and Inverter Circuits: Suitable for electric drive and industrial automation systems needing reliable high-current switching for motors and actuators.
- Battery Management Systems: Supports safe and efficient battery charging/discharging, particularly in automotive and energy storage applications.
IPB025N10N3GATMA1 Brand Info
The IPB025N10N3GATMA1 is part of a recognized MOSFET portfolio known for combining advanced trench technology with automotive-grade reliability. This component is engineered to meet the rigorous demands of industrial and automotive sectors, providing a balance of low on-resistance, high current handling, and robust thermal performance. Its packaging and qualification standards align with modern design requirements for efficiency and long-term reliability, making it a preferred choice for engineers focusing on quality and performance.
FAQ
What are the primary advantages of using this N-channel MOSFET in automotive systems?
The device??s ultra-low RDS(on) and high current rating help reduce conduction losses and improve thermal efficiency, supporting reliable operation in powertrain, ECU, and power distribution modules under harsh automotive conditions.
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Is this MOSFET suitable for high-frequency switching applications?
Yes, its low gate charge and advanced trench structure enable efficient high-frequency switching, making it ideal for use in DC-DC converters and motor drives where fast switching and low losses are critical.
How does the automotive qualification benefit system designers?
Automotive-grade qualification (AEQ-Q101) ensures that the device meets stringent reliability and performance standards. This enables designers to confidently use the MOSFET in safety-critical and long-lifetime applications, reducing risk in deployment.
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What thermal performance can be expected from this device?
The low on-resistance minimizes power dissipation, while the wide operating temperature range ensures stable performance even in environments with significant thermal cycling or elevated ambient temperatures.
What package does this device use and why is it important?
The TO-263-3 package provides excellent thermal conductivity and is widely supported in automated manufacturing. This facilitates straightforward integration into high-power PCB designs, aiding in heat management and compact system layouts.
