IPB020N10N5ATMA1 N-Channel MOSFET 100V 120A TO-220 Infineon Power Transistor

  • Functions as an N-channel MOSFET, enabling efficient electronic switching in various power management applications.
  • Features a low on-resistance, which helps reduce energy loss and heat during operation.
  • Comes in a compact TO-220 package, saving valuable board space in dense circuit designs.
  • Ideal for use in DC-DC converters, where it supports stable and reliable power delivery.
  • Offers consistent performance to support long-term device reliability in demanding environments.
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IPB020N10N5ATMA1 Overview

The IPB020N10N5ATMA1 is a high-performance N-channel MOSFET designed for demanding power switching applications. With a low RDS(on) and robust voltage handling, it supports efficient, reliable operation in power management, motor drive, and industrial automation systems. Its advanced trench technology ensures minimal conduction losses, making it suitable for high-current, low-voltage circuits. The device is packaged in a TO-220 casing for ease of assembly and thermal management. This MOSFET provides engineers and sourcing specialists with a reliable solution for applications requiring precise switching and high efficiency. For more details, visit the IC Manufacturer.

IPB020N10N5ATMA1 Technical Specifications

ParameterValue
TypeN-Channel MOSFET
Drain-Source Voltage (VDS)100 V
Continuous Drain Current (ID)100 A
RDS(on) (max)2.0 m??
Gate Threshold Voltage (VGS(th))2.0 V ÿ 4.0 V
PackageTO-220
TechnologyTrench MOSFET
Operating Temperature Range-55??C to 175??C
Power Dissipation (PD)300 W

IPB020N10N5ATMA1 Key Features

  • Ultra-low RDS(on): Minimizes conduction losses, enabling higher efficiency in power conversion and switching circuits.
  • High current handling: Supports up to 100 A continuous drain current, making it suitable for demanding industrial loads and robust motor control.
  • Wide voltage capability: Withstands up to 100 V drain-source voltage, offering flexibility for a variety of switching topologies and safety margins.
  • TO-220 package: Facilitates excellent heat dissipation and straightforward PCB integration, aiding in thermal management for high-power environments.
  • Trench MOSFET technology: Delivers improved switching speed and reduced gate charge, supporting fast operation in high-frequency applications.

IPB020N10N5ATMA1 Advantages vs Typical Alternatives

This device offers superior efficiency and lower conduction losses due to its extremely low RDS(on) value compared to standard MOSFETs. Its robust 100 V voltage rating and high current capacity make it particularly reliable for industrial and motor drive applications. The advanced trench technology further enhances switching performance, resulting in minimal power dissipation and increased system reliability.

Typical Applications

  • Motor control and drive systems: The high current rating and low RDS(on) make this MOSFET ideal for use in industrial motor drives, electric vehicle inverters, and robotics needing efficient power delivery.
  • Switch-mode power supplies (SMPS): Enables efficient switching and reduced heat generation in high-performance SMPS for industrial or telecom equipment.
  • Battery management systems: Supports safe and effective power switching in large battery packs for renewable energy storage, uninterruptible power supplies, and electric vehicles.
  • Industrial automation equipment: Delivers robust performance for controlling heavy loads, actuators, and solenoids across a wide temperature range.

IPB020N10N5ATMA1 Brand Info

This product represents a commitment to advanced semiconductor technology, focusing on efficiency, reliability, and robust design for industrial and power applications. The manufacturer is recognized for producing high-quality MOSFETs that meet the needs of modern energy systems, automation, and motor control. The device??s combination of trench technology, low on-resistance, and industry-standard TO-220 packaging highlights its suitability for demanding professional environments.

FAQ

What sets the IPB020N10N5ATMA1 apart from standard MOSFETs?

The device features a remarkably low RDS(on) and high current handling, leading to improved efficiency and reduced heat generation. Its trench technology further supports fast switching and reliable operation in demanding industrial applications.

Which applications benefit most from this MOSFET?

It is ideal for motor drives, power supply circuits, battery management systems, and industrial automation, where high efficiency, low losses, and robust voltage/current handling are essential for reliable, long-term operation.

What packaging is used, and why is it advantageous?

The TO-220 package provides excellent heat dissipation, making it easier to manage thermal loads in high-power applications. It is also widely used in industry, which simplifies integration and sourcing.

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Can this MOSFET operate in harsh environments?

Yes, with an operating temperature range from -55??C to 175??C, it is well-suited for applications exposed to wide temperature variations and demanding conditions often found in industrial settings.

How does the trench MOSFET technology benefit users?

Trench technology allows for lower gate charge and faster switching speeds, resulting in higher efficiency and reduced switching losses. This is especially valuable in high-frequency circuits and power management systems.

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