IPB017N10N5ATMA1 Overview
The IPB017N10N5ATMA1 is a high-performance N-channel MOSFET engineered for demanding industrial and automotive power management applications. With its low RDS(on) and robust current handling, it ensures efficient switching and minimized power losses, making it well-suited for high-frequency operation. The device??s advanced trench technology and compact TO-263 package deliver reliability and flexibility, supporting integration into modern circuit designs. Sourcing specialists and engineers can rely on this transistor for consistent performance in a range of high-efficiency systems. For more details, visit the IC Manufacturer.
IPB017N10N5ATMA1 Technical Specifications
| Parameter | Value |
|---|---|
| Transistor Type | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | 100 V |
| Continuous Drain Current (ID) | 120 A |
| RDS(on) (max) | 1.7 m?? |
| Gate Charge (Qg) | 212 nC |
| Power Dissipation (PD) | 300 W |
| Package | TO-263 (D2PAK) |
| Technology | OptiMOS? 5 Trench |
| Operating Temperature Range | -55??C to +175??C |
IPB017N10N5ATMA1 Key Features
- Ultra-low RDS(on) of 1.7 m?? enables minimal conduction losses, supporting higher overall efficiency in power conversion systems.
- High current capability up to 120 A ensures robust performance in applications requiring reliable operation under heavy load conditions.
- Advanced OptiMOS? 5 trench technology enhances switching speed and reduces total gate charge, resulting in lower switching losses and improved thermal management.
- TO-263 (D2PAK) surface-mount package optimizes board space, simplifies assembly, and facilitates effective heat dissipation for demanding power stages.
IPB017N10N5ATMA1 Advantages vs Typical Alternatives
Compared to standard power MOSFETs, this device offers lower on-resistance, higher current handling, and improved switching characteristics, directly contributing to reduced energy losses and increased system reliability. Its advanced trench design and robust packaging make it a preferred choice for high-efficiency and high-density power electronics, providing superior performance where thermal management and compact integration are critical.
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Typical Applications
- Switching power supplies and DC-DC converters??ideal for high-efficiency voltage regulation and load switching circuits where low conduction losses are essential for system performance.
- Motor drive circuits??suitable for automotive and industrial motor control applications requiring high current capability and dependable switching under continuous operation.
- Battery management systems??used in energy storage, charging, and protection circuits where precise current handling and low losses are critical.
- General-purpose high-frequency switching??well-suited for use in inverters, synchronous rectification, and other fast-switching topologies in both industrial and automotive sectors.
IPB017N10N5ATMA1 Brand Info
This MOSFET is part of the OptiMOS? 5 family, designed for cutting-edge efficiency and reliability in power management applications. The product leverages proprietary trench technology and advanced packaging to address the needs of engineers seeking high performance and compact solutions. Its consistent quality and robust design have made it a preferred component in both industrial and automotive electronics, reinforcing the manufacturer??s reputation for innovation and dependability.
FAQ
What are the main advantages of the IPB017N10N5ATMA1 in high-current applications?
The device??s low on-resistance and high current rating allow it to handle large loads with minimal power dissipation, making it particularly effective in applications where thermal performance and energy savings are critical.
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Which package type does this MOSFET use, and why is it beneficial?
It utilizes the TO-263 (D2PAK) surface-mount package, which offers efficient heat dissipation, supports high current operation, and simplifies PCB assembly for automated production lines.
What design technologies are incorporated into the IPB017N10N5ATMA1?
The component employs OptiMOS? 5 trench technology, resulting in reduced gate charge and faster switching, which directly benefits efficiency and thermal management in high-speed power circuits.
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Is the IPB017N10N5ATMA1 suitable for automotive or industrial use?
Yes, it is designed to meet the rigorous demands of both automotive and industrial sectors, with specifications that support reliable operation in harsh environments and under continuous heavy load.
What is the typical operating temperature range for this device?
The operational temperature spans from -55??C to +175??C, allowing it to perform reliably in a wide range of ambient conditions commonly encountered in industrial and automotive environments.
