IMZC120R017M2HXKSA1 Overview
The IMZC120R017M2HXKSA1 is a high-performance MOSFET solution designed for demanding power electronics applications. This device provides exceptional efficiency, low on-resistance, and robust thermal performance, making it ideal for modern industrial and commercial systems. Its advanced trench technology supports improved switching behavior and minimized conduction losses. As part of the latest generation of power semiconductors, this component meets the rigorous requirements for reliability and integration in next-generation designs. Engineers and sourcing professionals can trust this device to deliver optimized performance in a variety of power management and conversion settings. Learn more at IC Manufacturer.
IMZC120R017M2HXKSA1 Technical Specifications
| Parameter | Value |
|---|---|
| Technology | Trench MOSFET |
| Drain-Source Voltage (VDS) | 120V |
| On-Resistance (RDS(on)) | 1.7 m?? |
| Continuous Drain Current (ID) | 120A |
| Gate Charge (Qg) | 174 nC |
| Power Dissipation (PD) | 625W |
| Operating Temperature Range | -55??C to +150??C |
| Package | TO-247 3-Pin |
IMZC120R017M2HXKSA1 Key Features
- Ultra-low on-resistance of 1.7 m?? significantly reduces conduction losses, maximizing energy efficiency in high-current environments.
- High current handling capability (120A) ensures suitability for power-intensive applications, supporting robust system design and reliability.
- Trench MOSFET structure optimizes switching performance, enabling faster operation and minimizing switching losses for improved thermal management.
- Wide operating temperature range (-55??C to +150??C) allows deployment in harsh industrial and automotive conditions without compromising reliability.
- High power dissipation rating (625W) supports demanding load profiles and enhances device longevity under continuous operation.
- Industry-standard TO-247 package facilitates easy integration into existing designs, supporting streamlined manufacturing and assembly processes.
IMZC120R017M2HXKSA1 Advantages vs Typical Alternatives
This device stands out by combining ultra-low on-resistance and high current capability with a robust trench MOSFET platform. Compared to typical alternatives, it minimizes both conduction and switching losses, enabling higher efficiency and improved thermal performance. The extended temperature range, along with substantial power dissipation, ensures reliable operation in challenging environments, making it a strong choice for engineers seeking durability and efficiency.
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Typical Applications
- High-Efficiency Power Supplies: Suitable for use in industrial and telecom power supply units where low conduction losses and high current handling are essential for reliable, energy-efficient performance.
- Motor Drives: Provides robust switching and thermal performance for variable-speed motor drives in automation and industrial equipment.
- Battery Management Systems: Ensures safe, efficient current flow and protection in high-capacity battery packs, including those used in electric vehicles and renewable energy storage.
- DC-DC Converters: Ideal for use in high-power DC-DC converters, supporting compact designs and improved thermal management in distributed power architectures.
IMZC120R017M2HXKSA1 Brand Info
The IMZC120R017M2HXKSA1 is produced by a leading manufacturer known for advanced semiconductor technologies focused on performance and reliability. This MOSFET exemplifies a commitment to innovation, leveraging trench technology to deliver superior electrical characteristics and robust thermal behavior. The product is engineered to meet the stringent standards of industrial, automotive, and commercial sectors, providing a trusted solution for power conversion and management. Its integration-friendly TO-247 package further supports ease of adoption across a wide range of system designs.
FAQ
What benefits does the trench MOSFET technology bring to this device?
The trench MOSFET structure enhances switching speed and reduces both conduction and switching losses. As a result, users benefit from improved efficiency and reduced heat generation, which is crucial for power-dense and thermally demanding applications.
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Is this MOSFET suitable for use in harsh industrial environments?
Yes, with its wide operating temperature range from -55??C to +150??C and high power dissipation capability, the device is designed to perform reliably in challenging industrial and automotive settings where thermal and environmental stresses are common.
How does the low on-resistance improve application performance?
The ultra-low on-resistance of 1.7 m?? minimizes energy losses during operation, resulting in higher system efficiency. This characteristic is especially important in applications with high current requirements, as it directly impacts thermal management and overall energy savings.
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What design flexibility does the TO-247 package offer?
The TO-247 3-pin package is widely recognized and supported across the electronics industry, offering straightforward integration, excellent heat dissipation, and ease of assembly. This enables engineers to implement the device in both new and existing designs with minimal adaptation.
Can this MOSFET be used in high-current battery management systems?
Absolutely. Its high continuous drain current rating and robust thermal performance make it well-suited for battery management applications, such as in electric vehicles or large-scale energy storage, where reliable current handling and safety are critical.
