IMZA65R020M2HXKSA1 Power MOSFET, 650V 20A, TO-220 Package, Infineon

  • Functions as a transistor, enabling efficient switching or amplification in electronic circuits for versatile use.
  • Low on-resistance reduces conduction losses, supporting cooler operation and higher energy efficiency in designs.
  • Compact package type saves board space, making the device suitable for dense or portable system layouts.
  • Ideal for power management circuits in consumer electronics, helping regulate voltage and protect sensitive components.
  • Designed for consistent performance, minimizing failures and supporting long-term operation in demanding environments.
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IMZA65R020M2HXKSA1 Overview

The IMZA65R020M2HXKSA1 is a high-efficiency N-channel MOSFET designed for advanced power management applications. Engineered with a focus on low on-resistance and fast switching, this device is well-suited for industrial and commercial power conversion systems. Its robust construction ensures reliable performance in demanding environments, making it a preferred choice for engineers seeking to optimize power density and thermal management. For sourcing and detailed technical support, visit IC Manufacturer.

IMZA65R020M2HXKSA1 Technical Specifications

ParameterValue
Transistor TypeN-Channel MOSFET
Drain-Source Voltage (Vds)650 V
Continuous Drain Current (Id)41 A
On-State Resistance (Rds(on))0.02 ??
Gate Charge (Qg)92 nC
Power Dissipation (Pd)208 W
Package / CaseTO-247-3
Mounting TypeThrough Hole
Operating Temperature Range-55??C to +150??C

IMZA65R020M2HXKSA1 Key Features

  • Low Rds(on) of 0.02 ?? minimizes conduction losses, enhancing overall system efficiency in power conversion applications.
  • High drain-source voltage rating (650 V) supports use in high-voltage industrial and commercial systems, ensuring robust operation.
  • Fast switching performance reduces switching losses, enabling designs with higher frequencies and improved power density.
  • High continuous drain current capability (41 A) allows this device to handle substantial loads, making it suitable for demanding environments.
  • TO-247-3 package supports efficient heat dissipation, contributing to reliability and longevity in thermal-critical applications.
  • Wide operating temperature range (-55??C to +150??C) ensures stable operation across diverse environmental conditions.

IMZA65R020M2HXKSA1 Advantages vs Typical Alternatives

This power MOSFET excels compared to standard alternatives by combining low on-resistance and high voltage capability, directly improving both efficiency and thermal performance. Its fast switching and high current handling further enhance reliability and allow for compact, high-density designs, making it an optimal choice for engineers seeking robust power semiconductor solutions.

Typical Applications

  • Industrial power supplies: Used in high-efficiency switch-mode power supplies (SMPS), enabling compact designs with reduced heat generation and improved energy conversion rates.
  • Motor drive circuits: Ideal for controlling industrial motors, thanks to its combination of high current handling and low conduction losses, ensuring precise motion control and reliability.
  • Renewable energy inverters: Suitable for solar and wind inverter topologies, where high voltage withstand and switching speed are crucial for maximum energy harvest and conversion efficiency.
  • Uninterruptible power supplies (UPS): Ensures stable power delivery and rapid switching, essential for backup systems in mission-critical environments.

IMZA65R020M2HXKSA1 Brand Info

The IMZA65R020M2HXKSA1 is offered by a recognized manufacturer specializing in advanced power semiconductor solutions. This device reflects the company??s commitment to innovation, quality, and reliability for demanding industrial sectors. With a proven track record in MOSFET technology, the brand delivers products that support high-efficiency, robust, and scalable system architectures. The IMZA65R020M2HXKSA1 stands as a testament to their focus on high-performance and application-driven engineering.

FAQ

What is the primary benefit of the IMZA65R020M2HXKSA1??s low on-resistance?

Low on-resistance (Rds(on)) means the device generates less heat during operation and reduces conduction losses. This increases the overall efficiency of power conversion systems, which is especially important in high-current and high-efficiency designs.

Which package type is used, and why is it important?

The IMZA65R020M2HXKSA1 uses the TO-247-3 package, a popular choice for high-power applications. This package supports excellent heat dissipation, making it suitable for systems where thermal performance and reliability are critical.

In what operating temperature range can this MOSFET be used?

This device operates reliably over a wide temperature range from -55??C to +150??C, making it suitable for use in both harsh industrial environments and demanding commercial applications.

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How does the high drain-source voltage rating benefit system designers?

A drain-source voltage rating of 650 V allows engineers to deploy the MOSFET in high-voltage circuits, such as industrial power supplies and renewable energy systems, without compromising on safety or performance margins.

What types of applications can leverage the fast switching capability?

Fast switching performance is particularly beneficial in applications like SMPS, inverters, and motor drives, where reduced switching losses and the ability to operate at higher frequencies enable more compact and efficient system designs.

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