IMZA65R010M2HXKSA1 MOSFET Power Transistor, TO-220 Package, Infineon

  • Delivers efficient power management, supporting stable operation of sensitive electronic circuits.
  • Features a compact package, enabling board-space savings in dense PCB layouts.
  • Model IMZA65R010M2HXKSA1 is suitable for integration in industrial automation or power supply systems.
  • Ideal for applications where thermal performance and electrical isolation are important for system longevity.
  • Manufactured with quality standards that ensure consistent and reliable device operation over time.
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IMZA65R010M2HXKSA1 Overview

The IMZA65R010M2HXKSA1 is a high-performance N-channel MOSFET designed for demanding industrial and power electronics applications. This device combines low RDS(on), high voltage tolerance, and robust switching capability, making it ideal for applications requiring efficiency and reliability. Engineered for use in high-power circuits, it supports enhanced thermal performance and compact system integration. Sourced from a trusted supplier, this MOSFET is optimized for designers prioritizing low losses and consistent operation in harsh environments. For additional product details and procurement, visit IC Manufacturer.

IMZA65R010M2HXKSA1 Technical Specifications

ParameterValue
Part CategoryMOSFET
Channel TypeN-Channel
Drain-Source Voltage (VDS)650 V
Drain Current (ID)75 A
RDS(on) (Max)0.010 ??
PackageTO-247-3
Mounting TypeThrough Hole
Operating Temperature Range-55??C to 150??C
PolaritySingle

IMZA65R010M2HXKSA1 Key Features

  • Low RDS(on) of 0.010 ??: Minimizes conduction losses, enabling higher system efficiency in power switching designs.
  • 650 V Breakdown Voltage: Supports reliable operation in high-voltage applications, providing safety margin and robust performance for industrial circuits.
  • High Continuous Drain Current (75 A): Allows for use in demanding loads and motor drives, supporting large power throughput without derating.
  • TO-247-3 Package: Ensures effective heat dissipation and straightforward integration into power modules or PCBs with through-hole mounting.
  • Wide Operating Temperature Range: Suitable for environments from -55??C to 150??C, ensuring reliable functionality in both standard and harsh conditions.
  • Single Polarity N-Channel: Streamlines circuit design and simplifies gate drive requirements.

IMZA65R010M2HXKSA1 Advantages vs Typical Alternatives

Compared to typical alternatives, this device provides a compelling combination of low on-resistance and high voltage tolerance, which directly contributes to reduced power losses and improved switching performance. The robust TO-247-3 package enhances thermal management, while the wide temperature range allows for deployment in challenging environments. These related function words collectively ensure higher reliability and efficiency in end applications.

Typical Applications

  • High-Efficiency Power Supplies: The low RDS(on) and high drain current rating make it ideal for switched-mode power supply (SMPS) topologies, minimizing losses and maximizing conversion efficiency in data centers or telecom equipment.
  • Motor Drives: Well-suited for industrial motor control circuits, this device handles substantial current loads while delivering reliable performance, even under demanding operational profiles.
  • Solar Inverters: The high voltage and current capabilities support renewable energy inverters, enabling efficient energy conversion from solar panels to grid or storage.
  • UPS Systems: Ensures robust switching in uninterruptible power supply units, contributing to system reliability and fast response during power events.

IMZA65R010M2HXKSA1 Brand Info

The IMZA65R010M2HXKSA1 is manufactured by a recognized leader in advanced power semiconductor technology. This MOSFET aligns with the brand??s commitment to providing reliable, energy-efficient solutions for industrial, power conversion, and renewable energy markets. The product exemplifies high quality standards and is engineered for seamless integration into a broad range of high-power applications, supporting system designers with trusted performance and long-term availability.

FAQ

What are the main benefits of choosing the IMZA65R010M2HXKSA1 for a new power design?

This device offers low conduction losses, high voltage tolerance, and robust current handling, making it an excellent choice for efficient and reliable power switching. Its thermal performance and proven packaging ensure dependable operation in industrial settings.

Which package type does this MOSFET use, and why is it suitable for power electronics?

It utilizes the TO-247-3 through-hole package, favored in power designs for its excellent heat dissipation and mechanical stability. This package simplifies mounting and supports higher current handling in demanding environments.

Is the IMZA65R010M2HXKSA1 suitable for use in high-temperature or harsh environments?

Yes, its wide operating temperature range from -55??C to 150??C enables reliable use in both standard and tough operational conditions. This makes it ideal for industrial, automotive, and renewable energy applications where ambient conditions may vary significantly.

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Can this device be used in renewable energy systems such as solar inverters?

Absolutely. With its high voltage rating and substantial current capability, it is well-suited for solar inverter applications, providing efficient and reliable energy conversion for grid-tied or off-grid solar power systems.

What makes the IMZA65R010M2HXKSA1 a better choice over similar MOSFETs?

Its combination of low RDS(on), high current rating, and robust voltage handling offers superior efficiency and reliability. This leads to lower losses, improved thermal performance, and extended system life in high-power applications.

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