IMW65R027M1HXKSA1 Power MOSFET, 650V 27m??, TO-247 Package

  • Delivers efficient voltage regulation, providing stable power for sensitive electronic circuits and devices.
  • Features a maximum rated voltage and capacitance suitable for energy storage in a wide range of applications.
  • Compact radial package enables high-density board layouts, saving valuable space in modern designs.
  • Ideal for use in power supplies, where it helps smooth output and reduce voltage ripple.
  • Constructed for long operational life, supporting dependable performance over extended periods of use.
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IMW65R027M1HXKSA1 Overview

The IMW65R027M1HXKSA1 is a high-performance N-channel MOSFET designed for demanding industrial and power electronics applications. Engineered for high efficiency and low RDS(on), this device is well-suited to fast switching and high current environments. With a maximum voltage rating of 650V and robust current handling, it offers superior reliability for power conversion, motor drive, and inverter systems. Its advanced package ensures optimal thermal performance and simplified board integration, making it an excellent choice for engineers seeking performance and longevity. For more information, visit IC Manufacturer.

IMW65R027M1HXKSA1 Technical Specifications

Parameter Value
Transistor Type N-Channel MOSFET
Drain-Source Voltage (VDS) 650 V
Continuous Drain Current (ID) 41 A
RDS(on) (Max) 27 m??
Gate Charge (Qg) 115 nC
Package Type TO-247-3
Operating Temperature Range -55??C to +150??C
Mounting Through Hole

IMW65R027M1HXKSA1 Key Features

  • Low RDS(on) of 27 m?? reduces conduction losses, enabling higher system efficiency and less heat dissipation in power stages.
  • 650V drain-source voltage rating supports high-voltage applications, providing flexibility in industrial and energy system designs.
  • High continuous drain current capability of 41A allows for robust current handling in demanding motor drives and inverter circuits.
  • Optimized gate charge (115 nC) enables fast switching speeds, improving system response times and reducing switching losses.
  • TO-247-3 package offers excellent thermal management and easy integration into standard power electronics layouts.
  • Wide operating temperature range supports reliable operation in harsh industrial environments.

IMW65R027M1HXKSA1 Advantages vs Typical Alternatives

This device stands out against typical MOSFET alternatives thanks to its low RDS(on), high voltage tolerance, and significant current handling. These characteristics increase power density and system efficiency while reducing thermal stress. The robust TO-247-3 package and extended temperature range further ensure reliable, long-term operation, making it ideal for mission-critical industrial and energy applications.

Typical Applications

  • Switching Power Supplies and Power Factor Correction (PFC): The device??s high voltage and current ratings, combined with low RDS(on), make it ideal for efficient power conversion and PFC circuits in industrial and commercial power supplies.
  • Motor Drives: Suitable for variable frequency drives and servo motor controllers that demand high reliability, fast switching, and robust current handling.
  • Solar Inverters: The 650V rating and efficient switching capabilities support fast, reliable energy conversion in photovoltaic inverter systems.
  • Uninterruptible Power Supplies (UPS): Effective in critical backup power systems where efficiency and reliability are paramount for extended operation.

IMW65R027M1HXKSA1 Brand Info

The IMW65R027M1HXKSA1 is produced by a recognized leader in power semiconductor solutions, reflecting a commitment to quality and technological innovation. This particular model represents the brand??s focus on high-efficiency, robust MOSFETs for industrial and energy applications. It is designed to meet the stringent demands of modern power electronics, providing users with a dependable, high-performance device suitable for a wide array of applications.

FAQ

What are the main benefits of using the IMW65R027M1HXKSA1 in high voltage designs?

The device??s 650V drain-source voltage rating and low RDS(on) enable safe, efficient operation in circuits requiring high voltage switching. This allows designers to achieve higher energy efficiency, lower thermal losses, and improved system reliability in demanding environments.

How does the TO-247-3 package contribute to thermal performance?

The TO-247-3 package provides a large surface area for heat dissipation, allowing for better thermal management compared to smaller packages. This helps maintain safe operating temperatures, even under high current loads, extending device life and ensuring stable operation.

Is the IMW65R027M1HXKSA1 suitable for fast switching applications?

Yes, thanks to its optimized gate charge and low RDS(on), this device supports fast switching speeds, making it highly effective in applications like power converters, inverters, and motor drives where switching frequency and efficiency are critical.

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Can the IMW65R027M1HXKSA1 operate reliably in harsh environments?

Absolutely. With an operating temperature range from -55??C to +150??C, this MOSFET is engineered for reliable performance even in demanding industrial or outdoor applications, ensuring consistent operation despite fluctuating ambient temperatures.

What types of circuits benefit most from this MOSFET??s characteristics?

Circuits that require high voltage handling, robust current capacity, and efficient switching??such as power supplies, motor controllers, and inverter systems??will benefit significantly from the performance attributes of this device.

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