IMW120R030M1HXKSA1 Overview
The IMW120R030M1HXKSA1 is a high-performance power MOSFET optimized for demanding industrial and power conversion environments. Designed with advanced semiconductor technology, this device offers exceptional efficiency and robustness for applications requiring high voltage handling and fast switching. Its low RDS(on) and high voltage rating make it suitable for energy-sensitive designs, while its reliability supports extended use in mission-critical systems. Ideal for engineers seeking a reliable solution for power management, the IMW120R030M1HXKSA1 supports precise control and integration in a wide range of electronic applications. For detailed sourcing, visit IC Manufacturer.
IMW120R030M1HXKSA1 Technical Specifications
| Parameter | Value |
|---|---|
| Product Category | MOSFETs – Single |
| Transistor Polarity | N-Channel |
| Drain-Source Voltage (Vds) | 1200 V |
| Continuous Drain Current (Id) | 36 A |
| RDS(on) (Max) | 30 mOhms |
| Gate Charge (Qg) | 132 nC |
| Power Dissipation | 357 W |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature Range | -55??C to +150??C |
IMW120R030M1HXKSA1 Key Features
- High voltage capability of 1200 V enables safe operation in industrial power conversion and motor drive systems.
- Low RDS(on) of 30 mOhms reduces conduction losses, leading to improved system efficiency for energy-conscious applications.
- High continuous drain current rating (36 A) supports reliable performance in systems with substantial current demand.
- Robust TO-247-3 package ensures effective heat dissipation and mechanical stability in high-power environments.
- Wide operating temperature range (-55??C to +150??C) allows deployment in harsh or thermally demanding installations.
- Optimized gate charge (132 nC) provides fast switching, enhancing performance in high-frequency designs.
- Through-hole mounting supports secure attachment and provides robust mechanical connection for industrial assemblies.
IMW120R030M1HXKSA1 Advantages vs Typical Alternatives
Compared to standard power MOSFETs, this device stands out with its combination of high voltage tolerance, low RDS(on), and substantial current rating. These features result in lower conduction losses, enhanced switching efficiency, and superior thermal management, making it favorable for applications requiring both reliability and high performance. Its robust package and wide operating temperature range further distinguish it for demanding industrial use cases.
🔥 Best-Selling Products
Texas Instruments BQ24075 Linear Battery Charger IC – 5mm x 4mm QFN Package
Texas Instruments INA219 Current Sensor Module – SOIC Package, Precision Monitoring
Texas Instruments LM4041 Precision Voltage Reference – SOT-23 Package
Texas Instruments OPA2134 Audio Op Amp – Dual, High-Performance, SOIC-8 Package
Typical Applications
- Industrial motor drives: The high voltage and current ratings make it a preferred choice for controlling and driving large motors in automation and manufacturing systems, improving both efficiency and system longevity.
- Switch-mode power supplies: Its fast switching and low on-resistance help reduce energy loss and improve overall power conversion efficiency in SMPS designs.
- Uninterruptible power supplies (UPS): This MOSFET is well-suited for use in UPS systems, enabling rapid switching and reliable operation in backup and emergency power circuits.
- Photovoltaic inverters: The device??s high voltage and current handling capabilities support efficient energy conversion in renewable energy inverter systems.
IMW120R030M1HXKSA1 Brand Info
The IMW120R030M1HXKSA1 is produced by a trusted manufacturer specializing in advanced semiconductor solutions for industrial and power conversion markets. This MOSFET is engineered to meet the rigorous demands of high-voltage and high-current applications, ensuring reliability and efficiency over long operational lifetimes. With a focus on quality and innovation, the brand delivers components that support the evolving needs of engineers and system designers, providing a dependable foundation for next-generation electronics.
FAQ
What benefits does the 1200 V rating provide for industrial applications?
The high 1200 V drain-source voltage rating allows this MOSFET to handle substantial voltage spikes and operate safely in industrial environments where voltage transients are common, such as motor control and power conversion systems.
🌟 Featured Products
“Buy MAX9312ECJ+ Precision Voltage Comparator in DIP Package for Reliable Performance”
QCC-711-1-MQFN48C-TR-03-1 Bluetooth Audio SoC with MQFN48C Package
0339-671-TLM-E Model – High-Performance TLM-E Package for Enhanced Functionality
1-1415898-4 Connector Housing, Electrical Wire-to-Board, Receptacle, Packaged
How does the low RDS(on) of 30 mOhms impact system efficiency?
A low on-resistance directly reduces conduction losses during operation, contributing to higher efficiency and lower heat generation. This is especially important in power-sensitive applications and helps improve overall system reliability.
Is the TO-247-3 package suitable for high-power designs?
Yes, the TO-247-3 package is specifically designed for high-power applications, offering excellent thermal performance and mechanical strength. It helps dissipate heat effectively, which is critical in demanding industrial and power conversion environments.
📩 Contact Us
Can this device operate reliably in harsh or variable temperature environments?
With an operating temperature range from -55??C to +150??C, this MOSFET is engineered for reliable use in a wide variety of environments, including those with significant thermal fluctuations or extreme temperature conditions.
What types of systems can benefit most from using this MOSFET?
Systems such as industrial motor drives, switch-mode power supplies, UPS units, and photovoltaic inverters benefit from its high voltage and current ratings, fast switching performance, and robust construction, ensuring both efficiency and longevity in critical applications.
