IMW120R007M1HXKSA1 Overview
The IMW120R007M1HXKSA1 is an advanced power MOSFET optimized for high-performance switching applications that demand efficiency and reliability. Designed for industrial and commercial power conversion, it delivers low on-resistance and robust voltage handling for next-generation systems. Its compact TO-247 package ensures ease of integration into modern designs. With a focus on reducing conduction and switching losses, this device supports engineers and sourcing professionals building efficient, high-density power supplies and inverters. Discover more at IC Manufacturer.
IMW120R007M1HXKSA1 Technical Specifications
| Parameter | Value |
|---|---|
| Type | N-channel MOSFET |
| Drain-Source Voltage (VDS) | 1200 V |
| Drain Current (ID) | 83 A |
| RDS(on) (Max) | 0.007 ?? |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Technology | Silicon Carbide (SiC) |
| Operating Temperature | -55??C to +150??C |
| Polarity | N-Channel |
IMW120R007M1HXKSA1 Key Features
- Ultra-low RDS(on) of 0.007 ?? delivers minimized conduction losses, enabling higher system efficiency and reduced thermal management requirements.
- High voltage capability up to 1200 V allows safe operation in demanding industrial and energy conversion environments where reliability is critical.
- Silicon Carbide (SiC) technology ensures faster switching speeds and lower switching losses compared to traditional silicon MOSFETs, supporting higher frequency operation.
- Robust TO-247-3 package with through-hole mounting simplifies mechanical integration and facilitates efficient heat dissipation.
IMW120R007M1HXKSA1 Advantages vs Typical Alternatives
This device stands out due to its combination of high voltage tolerance and ultra-low on-resistance, reducing both conduction and switching losses versus standard silicon MOSFETs. The use of Silicon Carbide technology enhances efficiency, enabling more compact, reliable, and energy-efficient designs. With robust packaging and wide operating temperature support, it delivers superior reliability and performance for industrial-grade power electronics.
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Typical Applications
- Industrial motor drives, where high efficiency and robust voltage handling enable precise control and long-term reliability in demanding environments.
- Switch-mode power supplies (SMPS) that benefit from reduced losses and high-frequency operation enabled by advanced SiC technology.
- Solar inverters requiring high voltage capabilities and low conduction losses for optimal power conversion efficiency.
- Uninterruptible power supplies (UPS) and energy storage systems, where reliable high-current handling and thermal stability are essential.
IMW120R007M1HXKSA1 Brand Info
The IMW120R007M1HXKSA1 is part of a leading-edge series of Silicon Carbide MOSFETs engineered for professional power management applications. Its manufacturer is recognized for delivering advanced semiconductor solutions that meet the rigorous standards of industrial electronics. This specific product combines innovation in SiC technology with a robust, industry-standard TO-247 package, providing sourcing specialists and engineers with a reliable and efficient component for power conversion and control systems.
FAQ
What advantages does Silicon Carbide technology provide in this MOSFET?
Silicon Carbide (SiC) technology enables higher efficiency by reducing both conduction and switching losses. This allows for higher frequency operation, better thermal performance, and more compact system design compared to traditional silicon-based MOSFETs.
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Is the device suitable for high-frequency switching applications?
Yes, thanks to its advanced SiC technology and low RDS(on), this MOSFET is well-suited for high-frequency switching scenarios. It minimizes losses and supports reliable operation in demanding industrial power conversion systems.
What are the main mounting and packaging features?
The device is supplied in a TO-247-3 through-hole package, which ensures secure board mounting and effective heat dissipation. This form factor is popular for industrial and high-power designs requiring robust mechanical stability.
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Can this MOSFET operate at elevated temperatures?
Absolutely. The device supports an operating temperature range from -55??C to +150??C, making it appropriate for industrial and high-stress environments where temperature fluctuations are common.
For which power systems is this component especially recommended?
It is especially beneficial for applications such as industrial motor drives, solar inverters, switch-mode power supplies, and energy storage systems that demand high voltage, high current, and superior efficiency over extended operational lifetimes.
