IMT65R022M1HXUMA1 Power MOSFET, 650V 22m??, TO-263 Package

  • Provides efficient switching for power management applications, enhancing energy savings in electronic circuits.
  • Features an N-channel MOSFET design, supporting fast switching speeds crucial for high-performance systems.
  • Housed in a compact TSDSON-8 package, saving valuable PCB space in dense layouts.
  • Well-suited for use in motor control circuits, ensuring stable operation under varying load conditions.
  • Manufactured to meet stringent quality standards, supporting long-term reliability in demanding environments.
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产品上方询盘

IMT65R022M1HXUMA1 Overview

The IMT65R022M1HXUMA1 is a high-performance N-channel power MOSFET designed for demanding industrial and power electronics applications. Featuring advanced trench MOSFET technology, this device offers low RDS(on), high efficiency, and robust switching characteristics. Its optimized package supports superior thermal management and compact board layouts, making it a strong choice for engineers seeking reliable and efficient solutions for switching power supplies, motor drives, and other high-current circuits. Discover technical details, features, and application benefits below. For more information, visit IC Manufacturer.

IMT65R022M1HXUMA1 Technical Specifications

ParameterValue
Transistor TypeN-Channel MOSFET
Drain-Source Voltage (VDS)650 V
Continuous Drain Current (ID)38 A
On-State Resistance (RDS(on))0.022 ??
Gate Charge (Qg)??
PackageTO-247
Operating Temperature Range-55??C to +150??C
TechnologyTrench MOSFET

IMT65R022M1HXUMA1 Key Features

  • Low on-resistance of 0.022 ?? minimizes conduction losses, leading to higher efficiency in power conversion circuits.
  • High drain-source voltage rating of 650 V enables use in robust high-voltage designs, supporting industrial-grade reliability.
  • TO-247 package improves heat dissipation and supports higher current handling, which is essential for power-dense systems.
  • Wide operating temperature range (-55??C to +150??C) ensures stable performance across harsh environments commonly found in industrial applications.

IMT65R022M1HXUMA1 Advantages vs Typical Alternatives

This device stands out due to its low RDS(on) and high voltage capability, offering superior efficiency and reduced thermal stress compared to standard MOSFETs. Its advanced trench technology and TO-247 package provide enhanced reliability and better thermal management, making it ideal for demanding power switching environments where long-term stability and energy savings are critical.

Typical Applications

  • Switching Power Supplies: The low on-resistance and high voltage capacity make it highly efficient in AC-DC and DC-DC converter topologies for industrial and commercial power supplies, improving overall system efficiency and reducing heat generation.
  • Motor Drives: Suitable for use in high-power motor control circuits, where precise and efficient switching is required for industrial automation and process control applications.
  • Uninterruptible Power Supplies (UPS): Provides reliable switching in backup power systems, ensuring stable operation during load transitions and minimizing energy losses.
  • Renewable Energy Systems: Ideal for solar inverters and other renewable installations where high voltage handling and efficiency are essential for maximizing energy throughput.

IMT65R022M1HXUMA1 Brand Info

The IMT65R022M1HXUMA1 is part of a specialized series of power MOSFETs engineered for industrial-grade performance. This product leverages proven trench MOSFET technology to deliver a combination of efficiency, durability, and high voltage capability. Its robust TO-247 package and optimized design make it a reliable choice for engineers and sourcing professionals seeking a dependable solution for high-current, high-voltage applications.

FAQ

What benefits does the low RDS(on) of this MOSFET provide in power supply design?

The low RDS(on) value of 0.022 ?? significantly reduces conduction losses during operation, which improves the overall efficiency of power supplies and helps limit unwanted heating. This contributes to better energy savings and potentially longer system lifespan.

Is the IMT65R022M1HXUMA1 suitable for high voltage applications?

Yes, with a drain-source voltage rating of 650 V, this device is well-suited for high voltage applications such as industrial motor drives, power supply units, and renewable energy systems where robust voltage handling is required.

How does the TO-247 package benefit power electronics engineers?

The TO-247 package offers enhanced heat dissipation and supports higher current levels, making it ideal for power-dense designs. This enables engineers to handle higher loads with improved thermal performance and reliability.

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产品中间询盘

Can this MOSFET operate in harsh industrial environments?

Yes, its wide operating temperature range from -55??C to +150??C ensures stable and reliable performance even in demanding and fluctuating environmental conditions found in industrial settings.

What makes this device a strong choice for renewable energy systems?

The combination of high voltage rating, low conduction losses, and robust thermal management makes it particularly suitable for solar inverters and other renewable energy applications where efficiency and reliability over long periods are essential.

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