IMT65R015M2HXUMA1 Overview
The IMT65R015M2HXUMA1 is a high-performance power MOSFET optimized for industrial and commercial applications demanding efficient power switching and robust reliability. Designed to deliver low on-resistance and superior energy efficiency, it supports advanced circuit designs in sectors such as power supplies, motor control, and automation. This device enables engineers to achieve compact, high-density power solutions with improved thermal management and system reliability. For more information, visit IC Manufacturer.
IMT65R015M2HXUMA1 Technical Specifications
| Attribute | Value |
|---|---|
| Transistor Type | N-Channel MOSFET |
| Drain-Source Voltage (Vds) | 650 V |
| Continuous Drain Current | 41 A |
| On-State Resistance (Rds(on)) | 0.015 ?? |
| Gate Charge (Qg) | 110 nC |
| Power Dissipation | 208 W |
| Package / Case | TO-247-3 |
| Operating Temperature Range | -55??C to +150??C |
IMT65R015M2HXUMA1 Key Features
- High voltage capability of 650 V, allowing reliable operation in demanding industrial and energy applications where robust switching is required.
- Very low on-resistance (0.015 ??) which minimizes conduction losses and improves overall system efficiency for power supply designs.
- High continuous drain current (41 A), supporting applications with substantial load requirements and ensuring safe operation under heavy loads.
- Optimized gate charge (110 nC) enables faster switching speeds, reducing transition losses and supporting higher frequency operation in modern power electronics.
- TO-247-3 package ensures excellent thermal performance, simplifying heat dissipation and enabling compact, high-density board layouts.
IMT65R015M2HXUMA1 Advantages vs Typical Alternatives
Compared to typical alternatives, this MOSFET offers a combination of low on-resistance and high voltage rating, delivering improved energy efficiency and thermal management. The high drain current and optimized gate charge further enhance switching performance, making it a preferred choice for systems demanding robust reliability and compact integration. Enhanced thermal characteristics and proven package design support longevity and system uptime.
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Typical Applications
- Switch-mode power supplies (SMPS): The device is ideal for primary-side switching in high-voltage power supplies, enabling increased conversion efficiency and system reliability in industrial and telecom systems.
- Motor drives: Suitable for inverter and drive circuits requiring fast switching and high current handling, supporting precise control and energy savings in motor control applications.
- UPS and backup power systems: Provides reliable high-current switching for uninterruptible power supplies, ensuring stable operation during load transitions and power interruptions.
- Renewable energy inverters: Applied in solar or wind energy inverters, facilitating efficient DC-AC conversion and contributing to system durability and performance.
IMT65R015M2HXUMA1 Brand Info
The IMT65R015M2HXUMA1 is engineered by a leading manufacturer in the semiconductor industry, focusing on innovative, high-quality power management solutions. This specific device integrates advanced MOSFET technology, ensuring a balance of high efficiency, low losses, and robust operational reliability. The product is supported by comprehensive documentation and a strong commitment to long-term supply, making it a trusted choice for high-demand industrial and commercial applications.
FAQ
What type of package does the IMT65R015M2HXUMA1 use and why is it significant?
This device is housed in a TO-247-3 package, which is known for excellent thermal performance and robust mechanical stability. The package helps simplify heat management in power-dense designs, ensuring reliable operation even under high load and temperature conditions.
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How does the low on-resistance of this MOSFET benefit my design?
The low on-state resistance (0.015 ??) reduces conduction losses, resulting in higher energy efficiency and lower heat generation. This characteristic is especially valuable in power supplies and motor control applications where efficiency and thermal performance are critical.
Can this component handle high switching frequencies?
Yes, the optimized gate charge (110 nC) allows for faster switching transitions, supporting high-frequency operation. This enables designers to create compact, efficient circuits with improved dynamic response in applications such as SMPS and inverters.
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What are the main industrial uses for this MOSFET?
This device is widely used in switch-mode power supplies, motor drives, UPS systems, and renewable energy inverters. Its robust voltage and current characteristics make it suitable for demanding environments where reliable power switching is essential.
Is the IMT65R015M2HXUMA1 suitable for harsh environments?
With an operating temperature range from -55??C to +150??C and a rugged TO-247-3 package, this MOSFET is designed to perform reliably in harsh and high-temperature settings, supporting long-term durability and stable performance in industrial and commercial applications.
