IMBG65R007M2HXTMA1 Power MOSFET, 650V 75A, TO-247 Package

  • Designed for efficient power management, supporting stable operation in demanding electronic circuits.
  • Features a low on-resistance, reducing conduction losses and improving overall system efficiency.
  • Compact package saves valuable board space and simplifies integration into dense PCB layouts.
  • Ideal for use in switching power supplies, enabling reliable voltage regulation in embedded systems.
  • Manufactured with strict quality controls to ensure consistent long-term performance in various conditions.
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产品上方询盘

IMBG65R007M2HXTMA1 Overview

The IMBG65R007M2HXTMA1 is a high-performance MOSFET designed for demanding industrial and commercial power applications. Featuring advanced silicon technology and a robust package, this device delivers extremely low RDS(on), high current handling, and excellent thermal performance. Its optimized characteristics make it suitable for power switching, motor drives, and high-efficiency conversion circuits. With a focus on reliability, efficiency, and integration, the IMBG65R007M2HXTMA1 supports designers in achieving superior power density and operational stability. For more information and sourcing, visit IC Manufacturer.

IMBG65R007M2HXTMA1 Technical Specifications

ParameterValue
Device TypeMOSFET
TechnologySi (Silicon)
Drain-to-Source Voltage (VDS)650 V
On-State Resistance (RDS(on))0.007 ??
Continuous Drain Current (ID)120 A
PackageTO-247 3-Pin
Mounting TypeThrough Hole
Operating Temperature Range-55??C to 150??C
PolarityN-Channel

IMBG65R007M2HXTMA1 Key Features

  • Extremely low RDS(on) of 0.007 ?? enables minimal conduction losses, resulting in higher efficiency for demanding power conversion applications.
  • High voltage tolerance up to 650 V allows reliable operation in industrial environments requiring robust isolation and safety margins.
  • Supports continuous drain current up to 120 A, ensuring suitability for high-power systems and motor drives that demand strong current capability.
  • TO-247 package with through-hole mounting provides excellent heat dissipation and mechanical robustness, facilitating design flexibility and thermal management.

IMBG65R007M2HXTMA1 Advantages vs Typical Alternatives

Compared to standard power MOSFETs, this device offers a combination of ultra-low on-resistance and high voltage capability, improving overall system efficiency and reducing heat generation. The high current handling and reliable TO-247 package make it an ideal choice for engineers seeking robust performance and simplified thermal design in industrial power management applications.

Typical Applications

  • High-efficiency power supplies: The low RDS(on) and high voltage rating make this MOSFET a preferred solution for switch-mode power supplies, server power units, and industrial converters requiring minimal energy loss and robust operation.
  • Motor control systems: Its high current capability and rugged construction are well suited for industrial motor drives, robotics, and automation equipment.
  • Renewable energy inverters: The device enhances efficiency and reliability in solar inverters and wind power conversion systems through optimal switching performance and thermal stability.
  • Uninterruptible power supplies (UPS): With strong voltage and current ratings, it supports seamless power backup and safe operation under variable loads in critical infrastructure applications.

IMBG65R007M2HXTMA1 Brand Info

The IMBG65R007M2HXTMA1 is engineered to meet the high standards of industrial and commercial power management. Manufactured using advanced silicon technology and packaged in the industry-standard TO-247, it delivers consistent performance in harsh operating conditions. This product reflects a commitment to quality, efficiency, and long-term reliability, supporting designers in building next-generation power electronics and ensuring sustainable system operation in diverse sectors.

FAQ

What makes the IMBG65R007M2HXTMA1 suitable for high-power applications?

The combination of a 650 V drain-to-source voltage, 120 A continuous drain current, and a low 0.007 ?? on-resistance ensures minimal energy loss and reliable performance, which are essential for high-power and high-efficiency systems like industrial motor drives and power supplies.

How does the TO-247 package benefit thermal management?

The TO-247 package provides a large surface area for heat dissipation and robust mechanical stability. This helps maintain safe operating temperatures, even under high current loads, and simplifies heat sink integration for better overall thermal management in demanding environments.

Is this MOSFET suitable for renewable energy systems?

Yes, the device??s high voltage and current ratings, along with its efficiency-focused design, make it ideal for use in solar and wind power inverters, ensuring reliable energy conversion and long-term stability in renewable energy installations.

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产品中间询盘

Can the IMBG65R007M2HXTMA1 be used in automotive or EV applications?

While the device??s electrical characteristics are suitable for high-power switching, its primary design focus is on industrial and commercial applications. For automotive or EV use, always confirm compliance with automotive-grade standards and application-specific requirements.

What are the key factors to consider during system integration?

When integrating this MOSFET, consider board layout for optimal thermal paths, appropriate gate drive circuits, and adequate cooling. The TO-247 package allows for flexible mounting and efficient heat removal, supporting reliable system operation in power-dense environments.

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