IMBG120R030M1HXTMA1 Overview
The IMBG120R030M1HXTMA1 is a high-performance power MOSFET designed for demanding industrial and commercial applications. Its robust characteristics and optimized packaging make it ideal for high-efficiency switching tasks, particularly where low on-resistance and fast switching speeds are essential. Engineered for reliability and consistent performance, this device helps engineers achieve superior thermal management and energy savings in their designs. For more detailed component information and sourcing, visit IC Manufacturer.
IMBG120R030M1HXTMA1 Technical Specifications
| Parameter | Value |
|---|---|
| Part Number | IMBG120R030M1HXTMA1 |
| Device Type | N-Channel MOSFET |
| Drain-to-Source Voltage (VDS) | 120 V |
| Continuous Drain Current | 180 A |
| RDS(on) (Max) | 3.0 m?? |
| Package / Case | PG-TDSON-8 |
| Mounting Type | Surface Mount (SMD) |
| Operating Temperature Range | -55??C to 175??C |
| Polarity | N-Channel |
IMBG120R030M1HXTMA1 Key Features
- Ultra-low RDS(on) of just 3.0 m??, enabling minimal conduction losses and high system efficiency for power conversion applications.
- High drain current capability (up to 180 A) supports robust performance in high-power switching circuits, improving overall reliability.
- Wide operating temperature range from -55??C to 175??C ensures dependable operation under harsh environmental and thermal conditions.
- PG-TDSON-8 surface-mount package supports compact, high-density PCB layouts while offering excellent thermal performance.
IMBG120R030M1HXTMA1 Advantages vs Typical Alternatives
Compared to standard MOSFETs, this device offers significantly lower on-resistance and higher current handling in a compact SMD package. These characteristics deliver greater energy efficiency, reduced heat generation, and improved system integration. The wide temperature range and robust design further enhance operational reliability for industrial and commercial systems.
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Typical Applications
- Switch-mode power supplies (SMPS), where low on-resistance and high current capacity help maximize conversion efficiency and minimize thermal losses in both industrial and enterprise systems.
- Motor drive circuits requiring precise, high-current switching for industrial automation, robotics, and HVAC equipment.
- DC-DC converters, where fast switching and low conduction losses are critical for compact and energy-efficient power management solutions.
- Battery management systems in electric vehicles and large-scale energy storage, benefitting from high reliability and thermal stability.
IMBG120R030M1HXTMA1 Brand Info
The IMBG120R030M1HXTMA1 is engineered by a leading semiconductor provider recognized for advanced power electronics innovation. This product exemplifies the brand’s commitment to delivering high-performance, reliable MOSFET solutions for industrial and commercial markets. By focusing on ultra-low on-resistance, high current capability, and compact packaging, the manufacturer ensures that this device meets the evolving requirements of modern electronic designs.
FAQ
What makes the IMBG120R030M1HXTMA1 suitable for high-efficiency applications?
This MOSFET features a very low RDS(on) of 3.0 m??, which minimizes conduction losses and improves overall system efficiency. Its ability to handle high continuous drain currents further supports demanding power conversion requirements.
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How does the package type benefit PCB designs?
The PG-TDSON-8 surface-mount package provides a compact footprint, enabling high-density board layouts. It also offers good thermal characteristics, supporting better heat dissipation and long-term device reliability in various applications.
Is the IMBG120R030M1HXTMA1 reliable in harsh environments?
Yes, with an operating temperature range from -55??C to 175??C, it is designed to maintain stable performance in extreme temperature and challenging operating conditions. This makes it suitable for industrial environments and other demanding uses.
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Can this device be used in automotive or energy storage systems?
Given its high current capability and robust temperature tolerance, it is well-suited for battery management and power switching roles in electric vehicles and energy storage solutions, where reliability and efficiency are critical.
What are the key advantages over standard MOSFETs?
Key advantages include a much lower on-resistance for reduced power loss, higher current handling, and a package that supports superior thermal management. These features help optimize system performance and reliability in a wide range of electronic applications.
