IMBG120R022M2HXTMA1 Overview
The IMBG120R022M2HXTMA1 is a high-performance MOSFET transistor designed for demanding industrial and commercial power management solutions. Engineered for optimal efficiency and robust operation, this device offers low on-resistance and excellent current handling for switching and amplification tasks. Its compact SMD package and reliable construction make it ideal for high-density PCBs in automotive, industrial automation, and power supply applications. The IMBG120R022M2HXTMA1 is manufactured to strict quality standards, ensuring consistent performance in challenging environments. For further details, visit IC Manufacturer.
IMBG120R022M2HXTMA1 Technical Specifications
| Parameter | Value |
|---|---|
| Type | N-Channel MOSFET |
| Drain-to-Source Voltage (VDS) | 120 V |
| Continuous Drain Current (ID) | 120 A |
| RDS(ON) (Max) | 0.022 ?? |
| Gate Charge (Qg) | Data available on request |
| Package Type | TO-263 (D2PAK) |
| Mounting Style | Surface Mount (SMD) |
| Operating Temperature Range | -55??C to +175??C |
| Polarity | N-Channel |
| Manufacturer Part Number | IMBG120R022M2HXTMA1 |
IMBG120R022M2HXTMA1 Key Features
- Low RDS(ON) provides reduced conduction losses, supporting high system efficiency in power conversion circuits.
- High current capability (up to 120A) enables robust handling of large loads in demanding environments.
- Wide operating temperature range allows reliable performance in both industrial and automotive settings.
- Surface mount TO-263 (D2PAK) package simplifies automated assembly and supports high-density PCB layouts.
IMBG120R022M2HXTMA1 Advantages vs Typical Alternatives
This MOSFET stands out due to its combination of low on-resistance and high current capacity, which directly improves efficiency and reduces thermal stress in switching applications. The wide temperature range and robust package increase versatility and operational reliability, making it a preferred choice for power electronics engineers seeking dependable, high-density solutions.
🔥 Best-Selling Products
Texas Instruments BQ24075 Linear Battery Charger IC – 5mm x 4mm QFN Package
Texas Instruments INA219 Current Sensor Module – SOIC Package, Precision Monitoring
Texas Instruments LM4041 Precision Voltage Reference – SOT-23 Package
Texas Instruments OPA2134 Audio Op Amp – Dual, High-Performance, SOIC-8 Package
Typical Applications
- Switching power supplies: Ideal for use in high-efficiency DC-DC converters and AC-DC power supplies where low conduction losses and high current capability are critical for performance and reliability.
- Motor drives: Suitable for industrial and automotive motor control systems that require precise switching and efficient power delivery.
- Battery management systems: Applied in energy storage and battery protection circuits, benefitting from the device’s high current handling and robust thermal properties.
- Load switching: Utilized in industrial automation and process control for reliable switching of high current loads with minimal losses.
IMBG120R022M2HXTMA1 Brand Info
The IMBG120R022M2HXTMA1 is a rigorously engineered N-channel MOSFET, reflecting the manufacturer??s commitment to quality and performance. This device is tailored for markets requiring high reliability and efficient power management, such as automotive, industrial, and energy sectors. Its integration of advanced process technology and robust packaging ensures consistent operation, even in challenging environments. With its proven parameters and industrial-grade construction, this MOSFET is trusted by sourcing specialists and design engineers worldwide.
FAQ
What are the main benefits of using the IMBG120R022M2HXTMA1 for power management?
The device offers low on-resistance and high current handling, which translates to reduced conduction losses and efficient operation. Its robust surface mount package also supports automated assembly and high-density PCB layouts, meeting the needs of modern power management systems.
🌟 Featured Products
“Buy MAX9312ECJ+ Precision Voltage Comparator in DIP Package for Reliable Performance”
QCC-711-1-MQFN48C-TR-03-1 Bluetooth Audio SoC with MQFN48C Package
0339-671-TLM-E Model – High-Performance TLM-E Package for Enhanced Functionality
1-1415898-4 Connector Housing, Electrical Wire-to-Board, Receptacle, Packaged
Is the IMBG120R022M2HXTMA1 suitable for automotive applications?
Yes, with its wide operating temperature range and ability to handle high currents, this MOSFET is well-suited for automotive environments where reliability and efficiency are required under varying thermal and load conditions.
What package does the IMBG120R022M2HXTMA1 use and why is it important?
This device is housed in a TO-263 (D2PAK) surface mount package, which is favored for its thermal performance, ease of automation, and ability to support high-density designs in industrial and automotive electronics.
📩 Contact Us
Can this MOSFET be used in battery management systems?
Absolutely. Its high current capability and stable performance across a wide temperature range make it ideal for battery management systems, supporting reliable protection and efficient energy flow in storage applications.
What makes the IMBG120R022M2HXTMA1 a reliable choice for industrial automation?
Its robust design, low RDS(ON), and high current handling ensure reliable switching in automation systems. These features help maintain system uptime and efficiency, which are critical in industrial environments.
