IMBG120R017M2HXTMA1 Overview
The IMBG120R017M2HXTMA1 is a high-performance power MOSFET designed for demanding industrial and commercial applications requiring exceptional efficiency and robust switching capabilities. Engineered to provide minimal on-resistance and optimized gate charge, this device enables designers to achieve significant power savings and improved thermal management in power conversion systems. Its advanced packaging and silicon technology deliver reliable operation even under challenging conditions, making it a strong choice for engineers seeking durability and consistent performance. For more information, visit IC Manufacturer.
IMBG120R017M2HXTMA1 Technical Specifications
| Parameter | Value |
|---|---|
| Transistor Type | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | 120V |
| Continuous Drain Current (ID) | 195A |
| RDS(on) (Max) | 0.017 ?? |
| Gate Charge (Qg) | 255 nC |
| Package | TO-247 |
| Mounting Type | Through Hole |
| Operating Temperature Range | -55??C to +150??C |
| Polarity | N-Channel |
IMBG120R017M2HXTMA1 Key Features
- Low RDS(on) of 0.017 ?? ensures reduced conduction losses, resulting in higher system efficiency for users designing power supplies or inverters.
- High continuous drain current rating (195A) supports demanding load requirements, enabling robust operation in high-current applications.
- Optimized gate charge (255 nC) minimizes switching losses, improving frequency response and reducing the need for oversized gate drivers.
- Wide operating temperature range (-55??C to +150??C) increases reliability in harsh industrial environments.
- TO-247 package offers excellent thermal dissipation, supporting higher power densities and simplified heat management.
- Through-hole mounting provides secure mechanical stability, making it ideal for applications subject to vibration or mechanical stress.
IMBG120R017M2HXTMA1 Advantages vs Typical Alternatives
This N-channel MOSFET stands out due to its combination of low on-resistance and high current handling, which translates directly to higher system efficiency and reduced heat generation compared to standard MOSFETs. The optimized gate charge further improves switching performance, enabling faster operation and minimizing energy loss during transitions. Its robust TO-247 package ensures reliable integration in demanding environments, offering a competitive edge for power engineers.
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Typical Applications
- Switch-mode power supplies (SMPS): The device??s low on-resistance and high current capability make it ideal for primary and secondary-side switching in SMPS topologies, delivering improved efficiency and thermal performance.
- Motor drives: Well-suited for industrial motor control circuits, where robust current handling and reliable switching are essential for precise speed and torque regulation.
- Uninterruptible power supplies (UPS): Supports battery management and inverter stages in UPS systems, ensuring stable power delivery in critical backup scenarios.
- Photovoltaic inverters: Enables efficient DC-AC conversion in solar inverter systems, supporting high currents and minimizing conduction losses for renewable energy implementations.
IMBG120R017M2HXTMA1 Brand Info
The IMBG120R017M2HXTMA1 is manufactured by a globally recognized leader in semiconductor technology, specializing in advanced power devices. This product exemplifies the company??s commitment to delivering high-efficiency, robust, and reliable MOSFET solutions for industrial and commercial markets. By leveraging proven silicon processes and rigorous quality standards, the manufacturer ensures that every device meets stringent application requirements, providing engineers with confidence for both new designs and critical system upgrades.
FAQ
What are the main advantages of using the IMBG120R017M2HXTMA1 in power electronic systems?
This MOSFET offers low on-resistance and high current capability, translating to reduced conduction losses and improved efficiency. Its robust package and thermal performance make it suitable for demanding industrial environments, helping engineers achieve reliable and high-performing power systems.
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Is the IMBG120R017M2HXTMA1 suitable for high-frequency switching applications?
Yes, the optimized gate charge specification enables efficient high-frequency switching. This helps minimize switching losses, making the device a strong choice for applications such as switch-mode power supplies and inverters requiring rapid transitions and low energy dissipation.
Can this device be used in harsh or high-temperature environments?
With an operating temperature range from -55??C to +150??C and the robust TO-247 package, this component is well-suited for harsh industrial and commercial environments where extended temperature operation is necessary.
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What types of mounting does the IMBG120R017M2HXTMA1 support?
The device is designed for through-hole mounting, providing secure mechanical stability. This is especially beneficial in applications exposed to vibration or mechanical stress, ensuring consistent performance and reliability over time.
Which industries benefit most from using the IMBG120R017M2HXTMA1?
Industries such as industrial automation, renewable energy (solar inverters), backup power (UPS), and motor control benefit from this MOSFET??s high current handling, efficiency, and reliability, addressing the critical needs of modern power electronics design.
