IMBG120R008M2HXTMA1 Overview
The IMBG120R008M2HXTMA1 is a high-performance MOSFET engineered for demanding industrial and commercial power management applications. With a maximum continuous drain current of 120A and a low on-resistance of just 0.008??, it enables efficient switching and thermal performance in compact designs. Its robust construction supports high-speed switching and reliable operation even under challenging conditions. Optimized for use in advanced power conversion, motor control, and inverter circuits, this device offers engineers a dependable solution for high-current, high-frequency applications. For more details, visit the IC Manufacturer.
IMBG120R008M2HXTMA1 Technical Specifications
| Parameter | Value |
|---|---|
| FET Type | N-Channel |
| Maximum Drain-Source Voltage (VDS) | 120V |
| Continuous Drain Current (ID) | 120A |
| On-Resistance (RDS(on)) | 0.008?? |
| Gate Charge (Qg) | 200nC |
| Package / Case | TO-263 |
| Operating Temperature Range | -55??C to +150??C |
| Mounting Type | Surface Mount |
IMBG120R008M2HXTMA1 Key Features
- High current handling capability up to 120A, enabling power-dense designs for industrial and automotive systems.
- Ultra-low on-resistance of 0.008?? significantly reduces conduction losses and improves overall system efficiency.
- Surface-mount TO-263 package supports automated assembly and effective heat dissipation, ensuring reliable thermal management.
- Wide operating temperature range from -55??C to +150??C allows use in harsh environments and demanding conditions.
IMBG120R008M2HXTMA1 Advantages vs Typical Alternatives
Compared to standard MOSFET options, this device delivers superior current capability and exceptionally low on-resistance, resulting in reduced power loss and improved efficiency. Its robust TO-263 package supports better heat management and automated assembly. The combination of high reliability, broad temperature tolerance, and energy efficiency makes it an ideal choice for engineers seeking dependable performance in high-power switching roles.
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Typical Applications
- Power conversion circuits: Used in DC-DC converters and power supply designs where high efficiency and low heat generation are critical, ensuring reliable operation in industrial power systems.
- Motor control: Suitable for use in electric vehicle drives, industrial automation, and robotics, where precise and robust switching of high currents is necessary.
- Inverters: Ideal for photovoltaic inverters and uninterruptible power supplies (UPS), supporting efficient energy transfer and load regulation.
- Battery management systems: Enables safe and efficient switching and protection functions in high-current battery management for renewable energy storage and electric transportation.
IMBG120R008M2HXTMA1 Brand Info
The IMBG120R008M2HXTMA1 is produced by a globally recognized semiconductor manufacturer known for innovation and quality in power management components. This product exemplifies the company’s commitment to delivering advanced MOSFET technology with a focus on efficiency, reliability, and ease of integration. Designed to meet the rigorous demands of industrial, automotive, and commercial applications, this device provides engineers with the confidence to design next-generation high-power systems.
FAQ
What is the maximum continuous drain current supported by this MOSFET?
The device supports a maximum continuous drain current of 120A, making it highly suitable for applications requiring substantial current flow, such as industrial power supplies and high-performance motor drives.
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Which package type does this MOSFET use, and why is it important?
This component is supplied in a TO-263 surface-mount package. The TO-263 form factor enables efficient heat dissipation and is compatible with automated assembly processes, which is crucial for high-reliability, high-volume production environments.
How does the low on-resistance benefit end applications?
With an on-resistance of just 0.008??, this MOSFET minimizes conduction losses, resulting in lower heat generation and improved energy efficiency in power conversion, motor control, and inverter circuits.
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What is the recommended operating temperature range for this MOSFET?
The recommended operating temperature range spans from -55??C to +150??C. This wide range enables reliable performance in both extreme cold and high-temperature industrial environments.
In which types of systems is this MOSFET commonly integrated?
This device is commonly used in DC-DC converters, motor drives, battery management systems, inverters, and other high-power switching applications where efficiency, current capability, and reliability are critical requirements.
