IMBF170R450M1XTMA1 Overview
The IMBF170R450M1XTMA1 is a high-performance MOSFET engineered for demanding industrial and power electronics applications. With its advanced silicon technology and optimized packaging, it delivers efficient switching, low on-resistance, and robust reliability. This device is designed to support high-voltage and high-current environments, making it suitable for modern power management systems. Its precise architecture enables consistent thermal performance and operational stability, supporting engineers in building efficient and reliable designs. Explore more at IC Manufacturer.
IMBF170R450M1XTMA1 Technical Specifications
| Parameter | Value |
|---|---|
| Product Type | MOSFET |
| Technology | Si, CoolMOS? |
| Drain-Source Voltage (VDS) | 650 V |
| On-State Resistance (RDS(on)) | 0.45 ?? |
| Continuous Drain Current (ID) | 7.6 A |
| Gate Charge (Qg) | 26 nC |
| Package | TO-220FP |
| Operating Temperature Range | -55??C to 150??C |
IMBF170R450M1XTMA1 Key Features
- 650 V drain-source voltage capability supports use in high-voltage power conversion, increasing system headroom and design flexibility.
- Low RDS(on) of 0.45 ?? reduces conduction losses, resulting in higher energy efficiency for end applications.
- Compact TO-220FP package with full isolation enhances safety, simplifies mounting, and improves thermal management in dense power designs.
- Robust silicon CoolMOS? technology ensures reliable switching performance, stability, and longevity under demanding electrical conditions.
IMBF170R450M1XTMA1 Advantages vs Typical Alternatives
This MOSFET offers a strong combination of high breakdown voltage and low on-resistance, enabling engineers to achieve superior efficiency and thermal management compared to standard MOSFETs. Its advanced packaging and reliable switching behavior make it a preferred choice for applications where power density, safety, and operational reliability are critical. The device??s robust construction supports long-term durability in industrial environments.
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Typical Applications
- Switched-mode power supplies (SMPS): The IMBF170R450M1XTMA1 excels in high-frequency switching, delivering improved energy efficiency and reduced heat generation for modern power supply topologies.
- Industrial motor drives: Suitable for driving motors in automation equipment, this MOSFET ensures precise control and long operational life in variable load conditions.
- Renewable energy inverters: Used in solar and wind inverter circuits, the device supports reliable energy conversion and stable operation in fluctuating environmental conditions.
- Power factor correction (PFC) stages: Ideal for applications requiring active PFC, it helps achieve regulatory compliance and reduces total harmonic distortion in power systems.
IMBF170R450M1XTMA1 Brand Info
The IMBF170R450M1XTMA1 represents a focused innovation in the power MOSFET segment, leveraging advanced CoolMOS? silicon processes to deliver high-voltage performance with low conduction losses. Designed and manufactured with stringent quality controls, this product is positioned to meet the expectations of engineers and OEMs requiring reliable, efficient switching devices for industrial-grade applications. Its combination of electrical characteristics and robust packaging underscores the brand??s commitment to performance, safety, and durability in power electronics.
FAQ
What voltage and current ratings define the operating limits of this MOSFET?
This device supports a maximum drain-source voltage of 650 V and a continuous drain current of 7.6 A, making it suitable for high-voltage, moderate-current power switching applications without compromising efficiency or safety.
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Which package type is used and what are its benefits?
The product is available in a TO-220FP full-pack package. This isolated package provides enhanced safety, easier mounting to heat sinks, and improved thermal management, making it ideal for industrial and power supply designs where isolation is crucial.
What technology underpins this MOSFET??s performance?
Utilizing advanced CoolMOS? silicon technology, the device achieves lower RDS(on) and minimized switching losses. This translates to higher efficiency and reduced heat generation in demanding applications such as SMPS and PFC circuits.
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How does the device improve energy efficiency in power conversion?
With its low on-state resistance and moderate gate charge, the MOSFET minimizes conduction and switching losses. This efficiency is especially valuable in continuous operation settings, contributing to lower system costs and improved thermal management.
For which industrial applications is this MOSFET especially suitable?
Engineers typically deploy this part in switched-mode power supplies, industrial motor drives, renewable energy inverter stages, and power factor correction circuits??environments where high voltage handling, reliability, and efficiency are essential design requirements.
