IKZA75N65RH5XKSA1 Power MOSFET, 650V 75A, TO-247 Package

  • Designed for efficient power switching, enabling reliable control in various electronic circuits and systems.
  • Features an N-channel configuration, which supports low on-resistance and efficient current flow in switching applications.
  • Compact package allows for reduced board space, making it suitable for designs with tight size constraints.
  • Ideal for use in power supply units, improving system performance by handling high voltages and currents.
  • Manufactured to meet rigorous quality standards, providing consistent and dependable operation over time.
SKU: IKZA75N65RH5XKSA1 Category: Brand:
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产品上方询盘

IKZA75N65RH5XKSA1 Overview

The IKZA75N65RH5XKSA1 is a high-performance MOSFET designed to deliver robust switching capabilities for demanding industrial and power applications. With a strong focus on efficiency and reliability, this device features advanced silicon technology, optimized for high-voltage and high-current environments. Its combination of low on-resistance and fast switching characteristics makes it suitable for applications where thermal management and power density are critical. For engineers and sourcing specialists seeking a dependable solution for power conversion or motor control, the IKZA75N65RH5XKSA1 offers a compelling blend of performance and durability. Learn more at IC Manufacturer.

IKZA75N65RH5XKSA1 Technical Specifications

Parameter Value
Product Category MOSFETs
Type N-Channel
Drain-Source Voltage (VDS) 650 V
Continuous Drain Current (ID) 75 A
RDS(on) (Max) 36 m??
Package / Case TO-247-3
Channel Configuration Single
Polarity N-Channel
Mounting Style Through Hole
Technology Silicon

IKZA75N65RH5XKSA1 Key Features

  • High voltage tolerance up to 650 V enables safe operation in industrial and power electronics, reducing risk of breakdown in high-load environments.
  • Low RDS(on) of 36 m?? minimizes conduction losses, improving overall system efficiency and reducing heat dissipation requirements for compact designs.
  • Rated for a continuous drain current of 75 A, supporting high-power circuits such as inverters and motor drives with reliable current handling.
  • TO-247-3 package offers efficient thermal management and is suitable for through-hole mounting, facilitating robust connections in power assemblies.

IKZA75N65RH5XKSA1 Advantages vs Typical Alternatives

Compared to standard MOSFETs, this device stands out with its combination of high voltage endurance and low on-resistance, allowing for reduced power loss and enhanced thermal performance. Its robust current rating and TO-247-3 package make it particularly well-suited for heavy-duty industrial applications requiring both reliability and compactness. The use of advanced silicon technology further ensures dependable operation in demanding environments, supporting long-term system stability and lower maintenance needs.

Typical Applications

  • Industrial motor drives and inverters: Leverages high current and voltage handling to ensure efficient and reliable operation in motor control systems, supporting both dynamic and continuous load profiles.
  • Switch-mode power supplies (SMPS): Suitable for high-efficiency power conversion, where minimizing conduction loss and managing heat are essential for stable operations and longevity.
  • Uninterruptible power supplies (UPS): Delivers robust switching performance to maintain power continuity in critical systems, supporting both fast switching and high load capacity.
  • Solar inverters and renewable energy systems: Enables efficient energy conversion and handling of high voltages, contributing to improved energy yield and reliability in power generation installations.

IKZA75N65RH5XKSA1 Brand Info

The IKZA75N65RH5XKSA1 is engineered by a leading manufacturer in the field of power semiconductors, focusing on high voltage and high current MOSFET solutions. This device is part of a comprehensive portfolio designed for industrial, energy, and high-reliability applications. The manufacturer??s commitment to quality and advanced silicon processes ensures that each component meets stringent performance and durability criteria, making this MOSFET a trusted choice for engineers and system designers seeking robust and efficient solutions for power management and conversion.

FAQ

What are the main benefits of choosing this MOSFET for power electronics designs?

This MOSFET offers a high drain-source voltage and a substantial continuous drain current rating, which is ideal for demanding power electronics. The low RDS(on) further reduces conduction losses, helping designers optimize efficiency and manage thermal issues more effectively.

Is the package suitable for high-power thermal management?

Yes, the TO-247-3 package provides excellent thermal performance, making it well-suited for high-power circuits. It supports efficient heat dissipation and is compatible with commonly used heat sinks in industrial environments.

Can this device be used in renewable energy systems such as solar inverters?

Absolutely. Its high voltage and current capability, combined with robust switching characteristics, make it a strong candidate for solar inverter applications, ensuring reliable and efficient energy conversion in renewable energy systems.

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产品中间询盘

What mounting style does this MOSFET support and why is it important?

This device features a through-hole mounting style, which is beneficial for high-power and industrial assemblies. Through-hole mounting ensures secure mechanical and electrical connections, especially where high currents are present.

How does the low on-resistance impact system performance?

A low RDS(on) value reduces conduction losses during operation, resulting in less heat generation and higher overall efficiency. This allows for compact system designs and potentially lower cooling requirements, contributing to system cost savings and reliability.

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