IKW50N65ES5XKSA1 IGBT Transistor 650V 50A TO-247 Infineon Power Module

  • This device functions as an IGBT, enabling efficient switching for high-voltage and high-current circuits.
  • Offers low switching losses, which helps reduce heat generation and increases overall system efficiency.
  • Compact package design saves board space, allowing for higher density layouts in power electronics systems.
  • Widely suitable for industrial motor control, providing smooth and reliable operation under demanding conditions.
  • Manufactured to support consistent performance and dependable operation over extended service life.
SKU: IKW50N65ES5XKSA1 Category: Brand:
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IKW50N65ES5XKSA1 Overview

The IKW50N65ES5XKSA1 is a high-performance Insulated Gate Bipolar Transistor (IGBT) designed for demanding industrial and power conversion applications. Offering optimized switching efficiency and robust operation, this device is tailored for engineers seeking dependable and efficient solutions in high-voltage environments. With its advanced field-stop and trench technology, it delivers a balanced combination of low conduction losses and fast switching, making it highly suitable for motor drives, inverters, and industrial power supplies. For more information, visit IC Manufacturer.

IKW50N65ES5XKSA1 Technical Specifications

Parameter Value
Device Type IGBT (Insulated Gate Bipolar Transistor)
Collector-Emitter Voltage (VCES) 650 V
Continuous Collector Current (IC) 50 A
Configuration Single
Technology Field Stop, Trench
Package TO-247-3
Mounting Type Through Hole
Operating Temperature Range -40??C to +150??C

IKW50N65ES5XKSA1 Key Features

  • Advanced field-stop and trench technology delivers low switching and conduction losses, enhancing overall system efficiency in power conversion circuits.
  • High collector-emitter voltage rating (650 V) enables safe operation in high-voltage industrial environments, increasing design flexibility and application range.
  • Robust continuous collector current handling (50 A) supports demanding loads with reliable and stable performance, reducing the risk of device failure during operation.
  • TO-247-3 package and through-hole mounting allow for straightforward integration into existing PCB layouts, streamlining the design and assembly process.

IKW50N65ES5XKSA1 Advantages vs Typical Alternatives

The IKW50N65ES5XKSA1 stands out due to its combination of high breakdown voltage, efficient switching performance, and solid current handling capability. Compared to typical alternatives, its advanced field-stop and trench structure minimizes switching and conduction losses, supporting greater energy efficiency, longer system lifetimes, and lower operating costs in demanding power applications.

Typical Applications

  • Industrial motor drives: The IGBT’s high voltage and current ratings make it ideal for variable frequency drives and servo control systems, ensuring reliable and efficient motor operation across a range of industrial automation scenarios.
  • Power inverters: Suitable for renewable energy inverter circuits, such as solar or wind systems, where efficient DC-AC conversion is critical for maximizing energy output and minimizing losses.
  • Uninterruptible Power Supplies (UPS): Enables high-reliability switching for backup power systems, providing stable output and quick response during power interruptions.
  • Welding equipment: Delivers robust and consistent current control necessary for industrial welding applications, contributing to precise energy delivery and improved weld quality.

IKW50N65ES5XKSA1 Brand Info

This IGBT device is engineered to deliver robust performance and reliability for industrial and commercial power systems. As part of a proven family of field-stop, trench-technology IGBTs, it is designed to help engineers achieve high efficiency and rugged operation in mission-critical applications. The device is well-suited for sectors requiring stringent reliability, such as automation, energy conversion, and power management, and is recognized for its consistent quality and technical excellence.

FAQ

What is the maximum collector-emitter voltage rating for the IKW50N65ES5XKSA1?

The maximum collector-emitter voltage (VCES) rating for this device is 650 V, which allows it to be used in circuits demanding high voltage endurance and stability, such as industrial inverters and motor drives.

Which mounting type and package does the IKW50N65ES5XKSA1 use?

This IGBT is provided in a TO-247-3 package with a through-hole mounting style. This allows for robust mechanical support and straightforward assembly in power electronic systems and industrial equipment.

How does the technology used in the IKW50N65ES5XKSA1 improve performance?

The field-stop and trench technology used in this IGBT reduces both switching and conduction losses. This results in higher energy efficiency, lower heat generation, and improved overall performance for demanding power conversion applications.

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In which environments can the IKW50N65ES5XKSA1 operate reliably?

With an operating temperature range of -40??C to +150??C, this device is suitable for a wide range of industrial environments, ensuring reliable operation even under harsh thermal conditions or fluctuating ambient temperatures.

What are typical use cases for this IGBT device?

Common applications include industrial motor drives, power inverters for renewable energy systems, uninterruptible power supplies, and precision-controlled welding equipment. Its electrical characteristics make it a versatile solution for high-power switching and control tasks.

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