IKW40N120CH7XKSA1 IGBT Transistor 1200V 40A TO-247 Power Module

  • Designed as an IGBT transistor, it efficiently switches and controls high-power electronic circuits.
  • 1200V voltage rating enables safe operation in demanding industrial and automotive environments.
  • TO-247-3 package offers a compact footprint, supporting high-density board layouts in power modules.
  • Ideal for use in motor drives, it contributes to precise speed regulation and energy efficiency.
  • Manufactured with consistent quality standards to ensure dependable long-term device performance.
SKU: IKW40N120CH7XKSA1 Category: Brand:
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IKW40N120CH7XKSA1 Overview

The IKW40N120CH7XKSA1 is a high-performance insulated-gate bipolar transistor (IGBT) designed for demanding power electronics applications. Its advanced technology supports efficient energy switching, making it ideal for environments where high voltage and fast switching are critical. This device is well-suited for engineers seeking robust operation, low saturation voltage, and reliable thermal performance. With a focus on minimizing conduction and switching losses, the IKW40N120CH7XKSA1 helps optimize system efficiency across industrial and commercial designs. For additional details and sourcing, visit IC Manufacturer.

IKW40N120CH7XKSA1 Technical Specifications

Attribute Value
Product Category IGBT Transistors
Collector-Emitter Voltage (VCES) 1200 V
Collector Current (IC) 80 A
Gate-Emitter Voltage (VGE) ?I20 V
Power Dissipation (Ptot) 416 W
Package / Case TO-247-3
Configuration Single
Mounting Type Through Hole
Product Series TrenchStop? 7

IKW40N120CH7XKSA1 Key Features

  • High collector-emitter voltage rating of 1200 V enables efficient operation in high-voltage industrial systems, providing ample headroom for demanding applications.
  • Robust continuous collector current capability up to 80 A allows the device to handle substantial loads, which is advantageous for motor drives and power conversion systems.
  • Low total power dissipation of 416 W supports enhanced thermal management and system reliability, reducing the need for extensive cooling solutions.
  • TO-247-3 package provides straightforward through-hole mounting for secure mechanical connection and optimal thermal conduction in power modules.
  • Wide gate-emitter voltage range (?I20 V) facilitates flexible gate drive design, enabling compatibility with various drive topologies and control strategies.
  • TrenchStop? 7 technology delivers advanced performance in terms of switching efficiency and reduced losses, supporting energy-saving operation in industrial environments.

IKW40N120CH7XKSA1 Advantages vs Typical Alternatives

The IKW40N120CH7XKSA1 stands out among IGBT transistors due to its higher voltage handling, strong current capability, and efficient thermal performance. Its TrenchStop? 7 technology offers improved switching behavior and reduced losses compared to conventional solutions, which translates to greater energy efficiency and system reliability. The robust package and flexible gate drive characteristics further support integration into a wide range of industrial power applications.

Typical Applications

  • Industrial motor drives: The high voltage and current ratings make this device suitable for controlling large AC motors in automation and process control systems, ensuring optimized efficiency and durability.
  • Inverters for renewable energy systems: Its fast switching and robust design are well-matched for solar and wind power inverters, contributing to reliable energy conversion and grid integration.
  • Uninterruptible power supplies (UPS): The device supports efficient high-power switching, which is critical for reliable backup power and minimizing energy loss during conversion.
  • Welding equipment: Its ability to handle substantial loads and withstand harsh operating environments makes it a go-to solution for industrial welders and similar power electronics.

IKW40N120CH7XKSA1 Brand Info

The IKW40N120CH7XKSA1 is produced within the renowned TrenchStop? 7 product series, recognized for its advanced IGBT technology and superior performance in high-power switching applications. This product is engineered to meet the demands of modern industrial systems, emphasizing efficiency, reliability, and ease of integration. The TrenchStop? 7 family is a benchmark in the field, offering solutions that address the challenges of thermal management, switching speed, and electrical robustness.

FAQ

What is the maximum collector-emitter voltage for the IKW40N120CH7XKSA1?

The device supports a maximum collector-emitter voltage of 1200 V, making it suitable for high-voltage applications in industrial and commercial power systems where safety and headroom are essential.

Which package type is used for this IGBT?

This IGBT features a TO-247-3 package, which enables efficient thermal dissipation and secure mounting in through-hole assembly processes often required in power electronics modules.

What current can the IKW40N120CH7XKSA1 handle continuously?

The device is rated for a continuous collector current of 80 A, allowing it to serve demanding applications such as motor drives, inverters, and power supplies with high load requirements.

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What technology underpins the performance of this transistor?

The IKW40N120CH7XKSA1 utilizes TrenchStop? 7 technology, which enhances switching efficiency and reduces conduction losses, contributing to improved energy efficiency and operational stability in end-use systems.

Is this IGBT suitable for renewable energy inverters?

Yes, its high voltage and current ratings, combined with fast switching characteristics, make it an excellent choice for inverter applications in solar and wind energy systems, supporting reliable and efficient power conversion.

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