IKQB120N75CP2AKSA1 Power MOSFET, 75V 120A, TO-220 Package, Infineon

  • Efficiently manages high-power switching tasks, ideal for controlling loads in electronic circuits.
  • Features a TO-247 package, enabling straightforward thermal management and easy integration on circuit boards.
  • Compact package design helps minimize board space requirements in dense power electronics assemblies.
  • Suitable for use in motor control applications where robust switching performance is critical to system operation.
  • Manufactured to ensure consistent operation and dependable performance over extended use in demanding environments.
SKU: IKQB120N75CP2AKSA1 Category: Brand:
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IKQB120N75CP2AKSA1 Overview

The IKQB120N75CP2AKSA1 is a high-performance N-channel MOSFET designed for demanding industrial and power management applications. With robust electrical characteristics, this device is engineered for efficient switching, low conduction losses, and reliable operation. Its advanced silicon technology enables higher system efficiency and compact designs, making it ideal for use in power conversion, motor drives, and high-speed switching circuits. For sourcing, technical documentation, and purchasing options, visit the IC Manufacturer website.

IKQB120N75CP2AKSA1 Technical Specifications

Parameter Value
Transistor Type N-Channel MOSFET
Drain-Source Voltage (VDS) 75V
Continuous Drain Current (ID) 120A
RDS(on) (Max) 8.1 m??
Package Type TO-220-3
Technology MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor)
Polarity N-Channel
Mounting Style Through Hole
Number of Pins 3

IKQB120N75CP2AKSA1 Key Features

  • High Drain Current Handling: Supports up to 120A continuous drain current, enabling robust performance in high-power circuits.
  • Low RDS(on): With a maximum on-state resistance of 8.1 m??, it minimizes conduction losses for improved overall efficiency.
  • 75V Drain-Source Voltage: Provides a safe margin for a wide range of voltage requirements in industrial and automotive systems.
  • TO-220-3 Package: Industry-standard package allows flexible integration and simplifies thermal management in compact layouts.

IKQB120N75CP2AKSA1 Advantages vs Typical Alternatives

The IKQB120N75CP2AKSA1 stands out with its combination of high current capability and low on-resistance, delivering superior efficiency and reduced heat generation compared to standard MOSFETs. Its robust TO-220-3 package and advanced MOSFET technology ensure reliable long-term operation, making it a strong choice for engineers seeking high-performance, power-efficient solutions.

Typical Applications

  • Switching Power Supplies: This device is ideal for high-efficiency DC-DC converters and AC-DC power supply units, where fast switching and low losses are critical for energy-saving designs.
  • Motor Drive Circuits: The high drain current rating supports demanding motor control applications in industrial automation and robotics systems.
  • Battery Management Systems: Suitable for battery protection and balancing circuits in electric vehicles and energy storage systems, ensuring reliable performance.
  • Inverter Circuits: Used in inverter topologies for renewable energy systems, providing stable operation under variable load and temperature conditions.

IKQB120N75CP2AKSA1 Brand Info

The IKQB120N75CP2AKSA1 is manufactured using advanced semiconductor processes to deliver reliable and efficient power switching solutions. This MOSFET is engineered for professional-grade applications, offering consistent performance and quality. The brand behind this part is recognized for its commitment to innovation and stringent quality standards, ensuring that each device meets the rigorous demands of modern electronic systems.

FAQ

What type of applications is the IKQB120N75CP2AKSA1 best suited for?

This N-channel MOSFET is well-suited for high-efficiency power management, including switching power supplies, industrial motor drives, and battery management systems. Its high current and low on-resistance make it ideal for demanding environments where reliability and efficiency are priorities.

What package type does this device use, and why is it beneficial?

The device comes in a TO-220-3 through-hole package, which is widely adopted for its ease of mounting, efficient heat dissipation, and suitability for both prototyping and production environments. This packaging ensures straightforward integration into a variety of power circuit designs.

How does the low RDS(on) of this MOSFET impact system efficiency?

The low maximum RDS(on) value of 8.1 m?? minimizes conduction losses during operation. This directly translates to reduced heat generation, increased energy efficiency, and the potential for smaller heatsinks or cooling requirements in your end system.

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Is the IKQB120N75CP2AKSA1 compatible with automated manufacturing processes?

With its standard TO-220-3 package and through-hole mounting style, this device is compatible with common PCB assembly and soldering techniques. It is suitable for both manual and automated insertion, supporting streamlined manufacturing workflows.

Can this MOSFET be used in high-frequency switching applications?

Yes, the device’s MOSFET technology and electrical characteristics make it appropriate for high-frequency switching circuits, such as those found in power inverters and DC-DC converters. Its fast switching capability helps maintain performance in demanding, high-speed environments.

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