IKP08N65H5XKSA1 Power MOSFET Transistor, 650V 8A, TO-220 Package

  • Enables efficient switching and control in high-voltage power electronics, supporting reliable circuit operation.
  • Features a TO-220 package, offering straightforward mounting and effective thermal management for demanding environments.
  • Compact package design saves board space, making it suitable for applications with strict size constraints.
  • Commonly used in power supplies and inverters, it helps reduce energy losses during frequent switching cycles.
  • Manufactured for consistent performance, promoting long-term device reliability in industrial and commercial installations.
SKU: IKP08N65H5XKSA1 Category: Brand:
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IKP08N65H5XKSA1 Overview

The IKP08N65H5XKSA1 is a high-performance N-channel MOSFET designed for demanding industrial and power applications. Featuring advanced silicon technology, this device delivers excellent efficiency, reliability, and switching characteristics. Its 650V drain-to-source voltage rating and low RDS(on) enable robust operation in high-voltage environments. The TO-220 FullPAK package supports straightforward thermal management and integration into diverse circuit designs. For engineers seeking dependable power switching solutions, this component offers a balanced blend of ruggedness and performance. IC Manufacturer

IKP08N65H5XKSA1 Technical Specifications

Attribute Value
Transistor Type N-Channel MOSFET
Drain-to-Source Voltage (VDS) 650 V
Continuous Drain Current (ID) 8 A
RDS(on) (Max) 0.68 ??
Gate Charge (Qg) 28 nC
Package / Case TO-220 FullPAK
Operating Temperature Range -55??C to +150??C
Mounting Type Through Hole

IKP08N65H5XKSA1 Key Features

  • High Voltage Capability: With a drain-to-source voltage rating of 650V, this MOSFET supports robust operation in high-voltage switching applications, ensuring system safety and reliability.
  • Low On-Resistance: The 0.68 ?? maximum RDS(on) minimizes conduction losses, improving overall power efficiency for energy-sensitive designs.
  • Enhanced Thermal Performance: The TO-220 FullPAK package provides efficient heat dissipation, allowing for higher current handling and simplified thermal management in compact layouts.
  • Fast Switching: The low gate charge of 28 nC enables rapid switching transitions, which is critical for high-frequency operation in power conversion circuits.

IKP08N65H5XKSA1 Advantages vs Typical Alternatives

This power MOSFET stands out due to its combination of high voltage tolerance, low on-state resistance, and efficient package design. When compared to standard alternatives, it offers improved switching performance, reduced conduction losses, and enhanced reliability in harsh environments. Its optimized parameters help engineers achieve superior efficiency and longer system lifetimes in demanding industrial and power electronics applications.

Typical Applications

  • Switch Mode Power Supplies (SMPS): This device is ideal for SMPS topologies, where its high voltage rating and efficiency contribute to reliable and compact power conversion designs for industrial equipment.
  • Motor Drive Circuits: Suitable for motor controllers, enabling efficient switching and reduced heat generation in industrial automation systems.
  • LED Lighting Drivers: Used in high-power LED drivers, leveraging its fast switching and robust voltage handling for stable, energy-efficient lighting solutions.
  • Uninterruptible Power Supplies (UPS): Provides reliable switching for backup power systems, ensuring stable performance during voltage fluctuations or outages.

IKP08N65H5XKSA1 Brand Info

The IKP08N65H5XKSA1 is manufactured by a leading global supplier specializing in advanced power semiconductor technologies. This particular product is engineered to deliver consistent performance in high-voltage, high-efficiency environments. The MOSFET is part of a proven lineup known for reliability and innovation in industrial power management, supporting a wide range of applications with stringent requirements. Its robust construction and optimized characteristics reflect the manufacturer??s commitment to quality and engineering excellence.

FAQ

What package type does the IKP08N65H5XKSA1 use and why is it significant?

This device is offered in a TO-220 FullPAK package, which is valued for its efficient heat dissipation and ease of mounting. The FullPAK design also provides insulation, reducing the need for additional insulators and simplifying assembly in high-voltage systems.

Is this MOSFET suitable for high-frequency switching applications?

Yes, with its low gate charge of 28 nC, the IKP08N65H5XKSA1 enables fast and efficient switching. This characteristic makes it particularly suitable for high-frequency applications such as switch mode power supplies and motor drives.

What is the maximum drain-to-source voltage rating for this component?

The device offers a maximum drain-to-source voltage (VDS) of 650 V. This high rating allows for use in demanding power conversion and industrial circuits that operate with elevated voltage levels.

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How does the low RDS(on) benefit circuit designs?

A low RDS(on) of 0.68 ?? reduces conduction losses during operation, enhancing overall energy efficiency and minimizing heat generation. This directly contributes to more efficient and reliable power systems.

Can the IKP08N65H5XKSA1 operate in harsh environmental conditions?

Yes, with an operating temperature range from -55??C to +150??C, this MOSFET is suitable for use in a wide variety of industrial and power electronics environments, including those with challenging thermal and electrical demands.

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